M2U PACKAGE Search Results
M2U PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
| XPH2R106NC | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
M2U PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
M2U PackageContextual Info: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating |
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2sk1605ma127ma122100ma+1 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.4±0.2 4 • Four isolated elements contained in one package, allowing highdensity mounting |
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2002/95/ecma6x127ma127ma6x122+1 | |
M2U Package
Abstract: MA6X122 MA6X127
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ma6x127ma6x122no10-2m2u package | |
MA6X122
Abstract: MA6X1270G
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2002/95/ecma6x1270gma6x122 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 2.8+0.2 –0.3 6 5˚ 5 M Di ain sc te on na tin nc ue e/ d 4 • Four isolated elements contained in one package, allowing highdensity mounting |
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2002/95/ecma6x127ma127ma6x122+1 | |
MA122
Abstract: MA127 MA6X122 MA6X127
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ma6x127ma127ma6x122ma122 | |
MA6X122
Abstract: MA6X1270G
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2002/95/ecma6x1270gma6x122 | |
MA122
Abstract: MA127 MA6X122 MA6X127
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ma6x127ma127ma6x122ma122 | |
ln2054
Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
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kg01420sxkg01421sxln2789kg01422sx+16 | |
SOT23 marking sk
Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
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cat93c66cat93w66751bd517az+6 | |
MA122
Abstract: MA127 MA6X122 MA6X127
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2002/95/ecma6x127ma127ma122+1 | |
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Contextual Info: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16 |
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cat93c66cat93w66751bdcat93c66/d | |
A03 monolithic amplifier
Abstract: Fairchild Imaging CCD CCD422A Fairchild Imaging Contact image sensor fairchild
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OCR Scan |
1024x1024ccd422aisccd422a400nm+5 | |
L2904AV
Abstract: L358A
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lm158lm158alm258lm258a+7 | |
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Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC |
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lm158lm158alm258lm258a+5 | |
gn2011
Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
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OCR Scan |
tia-ac37ma334ma345ma551+15 | |
L358
Abstract: L2904V L2904 L2904AV LM358P L358A
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lm158lm158alm258lm258a+11 | |
L358Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC |
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lm158lm158alm258lm258a+6 | |
L358
Abstract: l2904 L2904AV LM258p equivalent LM358P LM358AP
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lm158lm158alm258lm258a+11 | |
L2904Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain |
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lm158lm158alm258lm258a+6 | |
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Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D Wide Supply Range: D description/ordering information 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ m NC 1OUT NC V CC+ NC co 4 3 2 1 20 19 |
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lm158lm158alm258lm258a+5 | |
21 ti m5pContextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain |
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lm158lm158alm258lm258a+6 | |
ADM8843
Abstract: ADM8843ACPZ-REEL7 ADM8845 CP-16-3 MO-220-VEED-2
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adm8843mo-220-veed-27-17-2008-a16-lead+5 | |
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Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain |
Original |
lm158lm158alm258lm258a+5 | |