M2D MARKING Search Results

M2D Package

Contextual Info: 2SK1214 Switching Diodes MA121 Silicon epitaxial planer type Unit : mm • Features +0.2 ● Three-element incorporated in one package, enabling high-density 2.8 –0.3 +0.25 1.5 –0.05 mounting +0.1 +0.1 0.3 –0.05 2 4 3 +0.1 0.16–0.06 +0.2 5 0.8 2.9 –0.05

M2D Package

Abstract: M2D marking "Switching diode" 6pin 2SK125
Contextual Info: 2SK1255 Switching Diodes MA6S121 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features 2.0±0.1 0.65 0.65 ● Small S-Mini type 6-pin package ● Three-element incorporated, enabling high-density mounting ● Flat lead type, with improved mounting efficiency and solderability

6pin rl

Abstract: "Switching diode" 6pin F MARKING 6PIN Switching diode 6pin marking 6pin
Contextual Info: MA111 Schottky Barrier Diodes SBD MA6S718 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 1.25±0.1 ● Small S-Mini 6-pin package ● Independent three-element incorporated, enabling high density mount- 2.0±0.1 0.65 0.65 • Features

M2D Package

Abstract: M2D marking MA6S121
Contextual Info: Switching Diodes MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: ï 4 ÄNDERUNGEN NICHT VERMASSTE KANTEN S I N D N I C H T M A ß S T Ä B L I CH NISCHEN BEHALTEN DIE DEN TECH­ FORTSCHRITT WIR UN5 DIENEN, VOR Ï 3 VERTRAULICH UNVERÖFFENTLICHTE ZEICHNUNG. VORBEHALTEN. ZEICHNUNG GESCHÜTZT C O P Y R I G H T 1995 ALLE RECHTE

MA6X121

Contextual Info: Switching Diodes MA6X121 Silicon epitaxial planar type Unit : mm + 0.25 0.65 ± 0.15 1.5 − 0.05 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 0.3 − 0.05 1 + 0.1 6 + 0.1 0.65 ± 0.15 5 2 4 3 1.45 ± 0.1 2.8 • Three-element contained in one package, allowing high-density

Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 0.7±0.1 1.25±0.1 2.1±0.1 • Features • Three isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and

MA6S121

Abstract: MA6Z121
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.1 ± 0.1 1.25 ± 0.1 • Features Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 5 3 4 0.7 ± 0.1

MA121

Abstract: MA6X121
Contextual Info: Switching Diodes MA6X121 MA121 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct

M2D marking

Abstract: MA121 MA6X121
Contextual Info: Switching Diodes MA6X121 MA121 Silicon epitaxial planar type Unit : mm • Features 2.90+0.20 –0.05 1.9±0.1 • Three-element contained in one package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X121 (MA121) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements contained in one package, allowing highdensity mounting

MA121

Abstract: MA6X121
Contextual Info: Switching Diodes MA6X121 MA121 Silicon epitaxial planar type Unit : mm + 0.25 0.65 ± 0.15 1.5 − 0.05 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 0.3 − 0.05 1 + 0.1 6 + 0.1 0.65 ± 0.15 5 2 4 3 1.45 ± 0.1 2.8 • Three-element contained in one package, allowing high-density

MA6S121

Abstract: MA6Z121 M2D marking
Contextual Info: Switching Diodes MA6Z121 MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting

MA121

Abstract: MA6X121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X121 (MA121) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements contained in one package, allowing highdensity mounting

MA6X1210G

Abstract: M2D marking
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1210G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in an c se ed lud

MA121

Abstract: MA6X121 M2D marking
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X121 (MA121) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 6 1.50+0.25 –0.05 4 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X121 (MA121) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o

M2D Package

Abstract: MA6S121 MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 5˚ Rating Unit Maximum peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm For switching circuit 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 M Di ain sc te on na tin nc ue e/ d 1.25±0.1 2.1±0.1 • Features

MA6S121

Abstract: MA6Z121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 Reverse voltage Maximum peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1210G Silicon epitaxial planar type For switching circuit • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Code Mini6-G3 • Pin Name • Three isolated elements contained in one package, allowing highdensity mounting

MA6X1210G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1210G Silicon epitaxial planar type For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

A114

Abstract: A115 JESD22 NC7SZ126 NL17SZ126
Contextual Info: NL17SZ126 Non-inverting 3-State Buffer The NL17SZ126 is a high performance dual noninverting buffer operating from a 2.3 V to 5.5 V supply. • • • • • • • • • • Extremely High Speed: tPD 2.6 ns typical at VCC = 5 V Designed for 2.3 V to 5.5 V VCC Operation

Contextual Info: NL17SZ126 Product Preview Non-inverting 3-State Buffer The NL17SZ126 is a high performance dual noninverting buffer operating from a 2.3 V to 5.5 V supply. • • • • • • • • • • Extremely High Speed: tPD 2.6 ns typical at VCC = 5 V Designed for 2.3 V to 5.5 V VCC Operation