M210 G Search Results

M-CORE Programmers Reference Manual

Abstract: M210S st e ex c552 fdb 317 AD M CORE Reference Manual RF MODULE CIRCUIT DIAGRAM dect D-10 D-12 D-16 M210
Contextual Info: •CORE M• ORE M•CO E M•CORE MCORERM/D REV 1 M•CORE Reference Manual with M210/M210S Specifications HCMOS Microcontroller Unit blank M•CORE with M210/M210S Specifications Reference Manual Motorola reserves the right to make changes without further notice to any products

relay m210

Abstract: M210 RELAY M210 leach MT-200-003 Leach relay socket MT200-003 Leach Relay B210-003
Contextual Info: B210-003 ENGINEERING DATA SHEET TRACK MOUNT RELAY SOCKET BASIC SOCKET SERIES DESIGNATION FOR: Series M210 APPLICABLE TRACK MT-200-003 GENERAL CHARACTERISTICS Designed to the standard and requirements of MIL-S-12883/52. Tolerances, unless otherwise specified, ±0.12mm.

relay m210

Abstract: relay lre M210 leach M210 RELAY Leach Relay Reliability CECC16101-027 M210A S210A M210 DC Coil MIL-C-39029/101-553
Contextual Info: M210 ENGINEERING DATA SHEET RELAY - NONLATCH 2 PDT, 5 AMP Polarized, non latching hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requirements of MIL-R-83536/1 and /2 Qualified to CECC16101-027 CECC16303-803 PRINCIPLE TECHNICAL CHARACTERISTICS

M12883

Abstract: relay lre S210 Relay socket MIL-S-12883 Leach relay socket S210 leach S210A s210 M210 DC Coil AWG20-22-24
Contextual Info: S210 ENGINEERING DATA SHEET RELAY SOCKET 5 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series M210 DC Coil GENERAL CHARACTERISTICS Crimp tool M 22520/7-01 with turret M 22520/7-12. Insertion and extraction tool MS 27534-20 or M 81969/16-01. Weight 15g max.

M210 RELAY

Abstract: Leach International M210
Contextual Info: M210 ENGINEERING DATA SHEET RELAY - NONLATCH 2 PDT, 5 AMP Polarized, non latching hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requirements of MIL-R-83536/1 and /2 Qualified to CECC16101-027 CECC16303-803 PRINCIPLE TECHNICAL CHARACTERISTICS

relay m210

Abstract: CECC16101-027 S210A S210 Relay socket
Contextual Info: M210 ENGINEERING DATA SHEET RELAY - NONLATCH 2 PDT, 5 AMP Polarized, non latching hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requirements of MIL-R-83536/1 and /2 Qualified to CECC16101-027 CECC16303-803 PRINCIPLE TECHNICAL CHARACTERISTICS

relay lre

Abstract: CECC16101-027 relay m210 M210 RELAY Mil-R-83536 M210A 161010 S210A S210-A4A1
Contextual Info: M210 ENGINEERING DATA SHEET RELAY - NONLATCH 2 PDT, 5 AMP Polarized, non latching hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requirements of MIL-R-83536/1 and /2 Qualified to CECC16101-027 CECC16303-803 PRINCIPLE TECHNICAL CHARACTERISTICS

MS3002

Abstract: 120JC M151 ms3009
Contextual Info: L-Band / S-Band Applications General Purpose Linear 1000 - 4000 MHz FREQ. Pout GAIN Min dBm Min (dB) Vce Icq (GHz) (V) MS3000 1 27 10.5 MS3002 1 31.8 SD1851 2 SD1853 PART NO. 0jc COB PKG Max (°C/W) Max STYLE (mA) 18 100 20 3.2 M210 9.5 20 220 25 4 M122

MS2442

Contextual Info: Avionics Applications Avionics, IFF Applications 1030 /1090 MHz Vcc 0jC PULSE DUTY PKG WIDTH USEC STYLE (V) Max (°C/W) CYCLE (%) 11.5 35 50 8 10 1 M105 10 9.7 40 40 0.6 10 1 M210 150 20 8.7 35 43 0.3 10 1 M212 1090 300 70 6.3 40 50 0.2 10 1 M218 MSC1350M

Contextual Info: 0 L - M B 1 - M 2 1 0 -S 1 REVISIONS MB1-M210-S1 ECO NO. UR DESCRIPTION A COMPONENT MATERIAL FINISH HOUSING AND CDNTACT BeCu PER ASTN B 196 AND/DR ASTM B 197 AND UNS «C17300 DR UNS «C17S000 GDLD PLATE PER ASTN B 488, TYPE 1, GRADE C, .000050 TO .000100 THICK OVER

Contextual Info: engineered to light up your design www.vcclite.com 1.800.522.5546 B-6 Double Contact Bayonet Base .780 MAX. P art Number 1.75 MAX. Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M210 C M1014 6.5 6.6 1.78 1.50 15.0 10.0 100 200 C -6 C -6 C M1061

M1061

Abstract: M1014 M163C M-137 M53X
Contextual Info: .780 MAX. P art Number 1.75 MAX. Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M210 C M1014 6.5 6.6 1.78 1.50 15.0 10.0 100 200 C -6 C -6 C M1061 C M104 C M1004 6.7 12.8 12.8 1.80 1.00 .94 13.0 12.0 15.0 400 500 100 C -6 C -6 C -6 P art Number

M1061

Abstract: M53X M1014 M182 M104 M130 M162 M163 M210 M-137
Contextual Info: .780 MAX. P art Number 1.75 MAX. Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M210 C M1014 6.5 6.6 1.78 1.50 15.0 10.0 100 200 C -6 C -6 C M1061 C M104 C M1004 6.7 12.8 12.8 1.80 1.00 .94 13.0 12.0 15.0 400 500 100 C -6 C -6 C -6 P art Number

MS3454

Abstract: MS3016 MS3453 MS3451 MS3021 MS3017 MS3384
Contextual Info: L-Band / S-Band Applications General Purpose 1000 - 4000 MHz PART NO. FREQ. Pout Pin GAIN T IC Vcc COB ejc PKG W Min (dB) Min (GHz) Min (W) (V) Max (°C/W) STYLE (%) Max (pF) MS3016 1 2 0.2 10 50 28 3.2 20 M211 MS3017 1 5 0.5 10 50 28 6.5 8 M211 MS3018 1

milliohm meter circuit

Abstract: milliohm meter battery clip for 9v pp3 relay m210 Rhopoint Components m210 9v connector M210 MN1604 equivalent CONTACT CONNECTORS M210 RELAY
Contextual Info: P R E C I S I O N I N E L E C T R O N I C S 5mA test current Milliohm meter 1mΩ-200Ω 1% of range This instrument is a portable digital meter to measure low resistances over the range 0.001Ω to 200Ω. A high degree of accuracy is achieved by utilising

2DI75M-120

Abstract: 1di200
Contextual Info: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120

6DI30Z-100

Abstract: 2DI75Z-120 2DI50Z-140 M106 1di200z-120 1200 2DI75Z 1DI200Z100 2DI100Z-120 M209
Contextual Info: Z-SER1ES DARLINGTON MODULES <§ Ratings and Characteristics VoltageRating Type Part Num ber Collector Current VcEX sus (cont.) V cbo VcEO (V) (V) (V) Thermal Resistance DCCurrentG ain Sw itchlngT lm es(m ax.) R t h <j -c ) IlFE Ic VcE ton t. tf Ic (A) °C/W(max)

1di200z-120

Abstract: 1di200
Contextual Info: Z-SERIES DARLINGTON MODULES <§ Ratings and Characteristics VoltageRating Type VcBO VcEO V (V) Collector Current V c e X(bus) (cont.) (V) Ic Thermal Resistance R th (j -c ) (A) °C/W(max) Trans. Diode DCCurrentG ain SwltchingTlmes(max.) Hf e Ic VcE ton (min)

M106 TRANSISTOR

Abstract: 1di200z-120 1di200
Contextual Info: /\°7 — x / W 7s / Power Devices z v u - x - io o o Z series high-speed switching 1000 volts class power transistor modules m a Device type Vme> VCEX Ic Cont Amps. Pc tlFE Min : . Vce Amps. Volts >C te M r t ' t W k SwitchingImveiMax.). I ' i - j ' T - y

battery clip for 9v pp3

Abstract: 9v 200 ohm relay Rhopoint Components m210 transformer welding relay 9v 100 ohm ohmeter milliohm meter circuit M210 MN1604 9V PP3 Battery Clip for PP3 Battery
Contextual Info: Rhopoint Instruments Ltd MILLI- OHMETER e l b ta r o P y l Tru n n n 1 milliohm to 200 ohms 0.1% accuracy Safe test current - 5mA max Description This battery operated digital resistance meter is designed to meas- long battery life and is powered by a single PP3 or MN 1604 bat-

1DI200A-120

Abstract: 1si10A 1DI200Z-120 1SI100A-100 M114 1DI400A-140 1DI300ZP-120 1DI300A-120 1DI200ZP 2DI150Z-100
Contextual Info: COLLMER SEMICONDUCTOR INC 2230712 4ÔE » 0 Q 0 1 S 7 3 b71 M C O L <S Power Darlington Modules 1000 VOLTS Device Type V c bo V ceo VCEO s u s I Volts Volts Volts I Ic Pc cont. Amps Watts (perxslr) h ra @ min Ic VcE Amps. Volts Switching time (max.) ton

c034

Abstract: C045 GA08 ga01
Contextual Info: N E C ELECTRONICS I NC 7S Ï Ë | b42752S % DODflni S |~" T - 4 2 - 11-Ï3 //P B 6 3 0 0 1 0 K H S ER IES B IPO LA R ECL GATE A R R A YS 1 N E C Electronics Inc. ( • December 1984 Description //PB6311 Specifications The //PB6300 (10KH) series consists of three ultrahigh-speed ECL gate arrays, compatible with an

1DI400A-120

Abstract: 1DI300A120 2DI75A120 2DI50Z 2DI75z120 1di200 1DI200ZP-120 ET1275 1DI300ZP-120
Contextual Info: COL LME R S E M I C O N D U C T O R INC S 5 3 û 7 c12 0Q01S73 b ? l • COL MêE » 'T 'b 'b 'Z O \ Power Darlington Modules s 1000 VOLTS Device Type V cbo V ceo V CEO (su s Volts Volts Volts Ic cont. Amps Pc Watts (perxstr) h ra @ min Ic VcE Amps. Volts

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn