M2 DIODE Search Results

Contextual Info: SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * KL M2 C2 $R * J^L M2 $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&E APP 1 ^AP D $( * _P M2 L^P D _PP D aKP 1 $R * JLP M2 A U5 $( * KL M2 ^PP D $( * _P M2 LJP D _PP D LPP D $:R N OP Q J^L M2

Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $S * KL M2 C2 $S * J^L M2 C2Za $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&I AQQ 1 J_L D $( * `Q M2 JLQ D YQQ D b KQ 1 $S * JLQ M2 A V5 $( * KL M2 JLQ D $( * `Q M2 JQQ D YQQ D ``Q D KQQ D O PQ NNN R J^L

B55QS03

Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600
Contextual Info: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H

1E14

Abstract: 2E12 FRM244D FRM244H FRM244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 00 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 00 m, d rd, Package • 12A, 250V, RDS on) = 0.400Ω TO-204AA

1E14

Abstract: 2E12 FRM240D FRM240H FRM240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 4 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 4 m, d rd, Package • 16A, 200V, RDS on) = 0.24Ω TO-204AA

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

MP5121

Abstract: MP5151 MP5111 MP5112 diodes ir10 MP5110 MP5114 MP5120 MP5141 MP5124
Contextual Info: Limiter Diodes E1 C7 105 ENVIRONMENTAL RATINGS Maximum Operating Temperature.-65 °C to +175°C Storage Temperature.-65 °C to +200°C Soldering Temperature.230 °C for 5 seconds M2 Electrical Specifications @ 25 °C CASE

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

3225 K50

Abstract: D4401N D660N D748N D1029N D2209N D2659N
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

Contextual Info: X2G100ND12P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 1200V 100A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Contextual Info: X2G150ND12P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 1200V 150A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

X2G150ND06P2

Contextual Info: X2G150ND06P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 150A PACKAGE : M2 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Laser power supply SAPPHIRE 488-20

Abstract: ms-7g blue laser head Coherent TEM00
Contextual Info: Coherent Laser Division Continuous-Wave Diode-Pumped SAPPHIRE 488 & 460 CW Blue Lasers System Specifications Sapphire 488-20 Sapphire 460-10 Wavelength1,6 488 ±2 nm 460 ±2 nm Output Power2 20 mW Spatial Mode Beam Asymmetry 10 mW TEM00, M2 <1.1 <1:1.1 Beam Diameter @ 1/e2

TP136

Abstract: AJ2283 S83019F B270 rs tube S-8301
Contextual Info: Return To Product Page S83019F, S83019FM1, S83019FM2 Photomultipliers 51-mm 2-inch Diameter 10-Stage, Head-On PMTs BURLE S83019F, -M1, and -M2 are two-inch round, 10stage photomultiplier tubes. Each employs a potassium-cesium antimonide (bialkali) photocathode

X2G150ND06P2

Contextual Info: X2G150ND06P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 150A PACKAGE : M2 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

schott 8270

Abstract: 10-STAGE TP136 AJ2283 S830
Contextual Info: Return To Product Page S83025F, S83025FM1, S83025FM2 Photomultipliers 76-mm 3-inch Hexagonal 10-Stage,Head-On PMTs BURLE S83025F, -M1, and -M2 are three-inch hexagonal, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali)

Contextual Info: HIGH POWER SPT+ TYPE 2-PACK IGBT MODULE X2G100SD12P2 • CIRCUIT DIAGRAM 1200V 100A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Soft Punch Through SPT+ Technology • Fast F & soft f inverse i CAL di diodes d • 10us short circuit capability • Positive VCE(on) temperature coefficient

S8430

Abstract: S-8430AF S8430-AF 8-Bit Microprocessors regulator 12V glucose monitor Seiko EEPROM S8430AF Seiko LDO Voltage Regulators Seiko Instruments USA
Contextual Info: SI7082 mech 2/12/98 3:20 AM Page 1 VSW CONT VIN M2 M1 * VOUT RC oscillation circuit Ref. voltage circuit Control circuit VSS ON/OFF SEL1 SEL2 * Parasitic diode Now! Step-Up Switching Regulator And Step Down Series Regulator On a single chip…Immediate delivery from stock!

X2G100SD12P2

Contextual Info: HIGH POWER SPT+ TYPE 2-PACK IGBT MODULE X2G100SD12P2 • CIRCUIT DIAGRAM 1200V 100A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Soft Punch Through SPT+ Technology • Fast F & soft f inverse i CAL di diodes d • 10us short circuit capability • Positive VCE(on) temperature coefficient

AJ2283

Abstract: scintillator 10-STAGE TP136 S83021E B270 bialkali refraction S830 S83021EM2 S83021EM1
Contextual Info: Return To Product Page S83021E, S83021EM1, S83021EM2 Photomultipliers 76-mm 3-inch Diameter 10-Stage, Head-On PMTs BURLE S83021E, -Ml, and -M2 are three-inch round, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali) photocathode

zener diode 1N5817

Abstract: diode DS1 capacitor 1mf 2SK294 10KW 1N5817 MBR2535CT P54C P55C RC5041
Contextual Info: www.fairchildsemi.com RC5041 Programmable DC-DC Converter for Pentium P55C, K6 , and 6x86MX™ M2 Processors Description • Programmable output from 2.1V to 3.5V using integrated 4-bit DAC • 87% efficiency • Oscillator frequency adjustable from 200KHz to 1MHz

IRFD2Z0

Abstract: D82AN2
Contextual Info: IRFD2Z0,2Z1 D82AN2.M2 GW HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.32 AMPERES

C38 06 DIODE

Abstract: D82BN2
Contextual Info: IRFD210,211 D82BN2.M2 FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.6 AMPERES

amplifier 5.1 surrounding system circuit diagram

Abstract: ap3502 2.1 crossover amplifier pcb AP3503 IN4148
Contextual Info: Application Note 1044 Design Consideration with AP3502/3 Prepared by Qingling You System Engineering Dept. 1. Introduction The AP3502/3 are synchronous step-down converters with internal power MOSFETs. Turn on/off M1 and M2 alternately to chop the input voltage. The current