M2 DIODE Search Results

Contextual Info: SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * KL M2 C2 $R * J^L M2 $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&E APP 1 ^AP D $( * _P M2 L^P D _PP D aKP 1 $R * JLP M2 A U5 $( * KL M2 ^PP D $( * _P M2 LJP D _PP D LPP D $:R N OP Q J^L M2

Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $S * KL M2 C2 $S * J^L M2 C2Za $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&I AQQ 1 J_L D $( * `Q M2 JLQ D YQQ D b KQ 1 $S * JLQ M2 A V5 $( * KL M2 JLQ D $( * `Q M2 JQQ D YQQ D ``Q D KQQ D O PQ NNN R J^L

B55QS03

Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600
Contextual Info: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H

1E14

Abstract: 2E12 FRM244D FRM244H FRM244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 00 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 00 m, d rd, Package • 12A, 250V, RDS on) = 0.400Ω TO-204AA

1E14

Abstract: 2E12 FRM240D FRM240H FRM240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 4 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 4 m, d rd, Package • 16A, 200V, RDS on) = 0.24Ω TO-204AA

MIP30N03A

Contextual Info: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards

Contextual Info: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

MP5121

Abstract: MP5151 MP5111 MP5112 diodes ir10 MP5110 MP5114 MP5120 MP5141 MP5124
Contextual Info: Limiter Diodes E1 C7 105 ENVIRONMENTAL RATINGS Maximum Operating Temperature.-65 °C to +175°C Storage Temperature.-65 °C to +200°C Soldering Temperature.230 °C for 5 seconds M2 Electrical Specifications @ 25 °C CASE

eupec rectifier

Contextual Info: eupec Check List for Assemblies 1 Device Diode Thyristor Module IGBT / IHM 2 Circuit Middle point- M1 M2 M3 M3.2 circuit un-controlled full-controlled Bridgecircuit B2 un-controlled B6 half controlled Inverse parallel circuit half controlled full-controlled

M2 DIODE

Contextual Info: 100NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package

m1 250c

Contextual Info: 100 100NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

3225 K50

Abstract: D4401N D660N D748N D1029N D2209N D2659N
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

osram mini top LED rot

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, Low Current InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary D ata Wesentliche Merkmale • Chipgröße 170 x 170 µ m2 • Wellenlänge: 630 nm • Technologie:InGaAIP

Contextual Info: X2G100ND12P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 1200V 100A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Contextual Info: X2G150ND12P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 1200V 150A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Hitachi DSAUTAZ005

Contextual Info: HVC363A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC363A ZDV D +EG=1.1100E+00 +CJO=6.3000E-11 +TT=5.1390E-06 +CJO2=4.9656E-10 +COFF=2.0000E-12 +IS=3.0840E-14 +PB=7.6000E-01 +BV=3.2000E+01 +M2=1.6509E+00

Hitachi DSAUTAZ005

Contextual Info: HVC351 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC351 ZDV D +EG=1.1100E+00 +CJO=2.8000E-11 +TT=5.1390E-06 +CJO2=5.4344E-12 +COFF=5.0000E-12 +IS=5.1390E-15 +PB=7.6000E-01 +BV=1.0000E+01 +M2=3.7750E-01

Hitachi DSAUTAZ005

Contextual Info: HVR100 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVR100 ZDV D +EG=1.1100E+00 +CJO=7.3253E-10 +TT=5.1390E-06 +CJO2=2.4446E-05 +COFF=1.4800E-11 +IS=4.1640E-14 +PB=7.3000E-01 +BV=1.5000E+01 +M2=6.1364E+00

Hitachi DSAUTAZ005

Contextual Info: HVU300A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU300A ZDV D +EG=1.1100E+00 +CJO=1.0400E-10 +TT=5.1390E-06 +CJO2=2.5747E-09 +COFF=2.0000E-12 +IS=2.2276E-14 +PB=7.6000E-01 +BV=3.2000E+01 +M2=2.1947E+00

Hitachi DSAUTAZ005

Contextual Info: HVU202A Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU202A ZDV D +EG=1.1100E+00 +CJO=2.9710E-11 +TT=5.1390E-06 +CJO2=5.3359E-11 +COFF=1.0000E-13 +IS=8.2520E-16 +PB=8.1000E-01 +BV=3.4000E+01 +M2=9.0530E-01

X2G150ND06P2

Contextual Info: X2G150ND06P2 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 150A PACKAGE : M2 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

Laser power supply SAPPHIRE 488-20

Abstract: ms-7g blue laser head Coherent TEM00
Contextual Info: Coherent Laser Division Continuous-Wave Diode-Pumped SAPPHIRE 488 & 460 CW Blue Lasers System Specifications Sapphire 488-20 Sapphire 460-10 Wavelength1,6 488 ±2 nm 460 ±2 nm Output Power2 20 mW Spatial Mode Beam Asymmetry 10 mW TEM00, M2 <1.1 <1:1.1 Beam Diameter @ 1/e2