M1L MARKING Search Results

A720 transistor

Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Contextual Info: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

2N2015

Abstract: marking CF R/NPN/transistor cf 331 2N2016
Contextual Info: M1L-S-19500/248A EL 10 A di-II 1963 SUPERSEDING M IL-S -19500/248(S igC ) 21 June 1962 M ILITARY SPECIFICATION TRANSISTOR, N P N , S ILIC O N TYPES 2N2015, 2N2016 1. SCOPE 1.1 Scope. - This sp e cifica tio n cover* the d eta il requirements fo r si I icon, N P N , transistors

7802901JX

Abstract: HD1-15530-8 HD4-15530-8 78029
Contextual Info: D ESC FORM 193 MAY 86 Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN

C4296

Abstract: RT1L AS4C4256 CAH-15 CSR1010
Contextual Info: AUSTIN SEMICONDUCTOR, INC. 256K DRAM AS4C4256 883C 256 X 4 ORAM 4 DRAM X FAST PAGE MODE AVAILABLE AS M ILITA RY S P E C IF IC A T IO N • S M D 5% 2-‘X 6I7 • M1L-STD-S83 PIN ASSIGNMENT TopView) 20-Pin DIP FEATURES • • • • • • • • Industry standard pinout an d tim ing

7802901JX

Abstract: HD1-15530-8
Contextual Info: D ESC FORM 193 MAY 86 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN

13001 s 6B

Abstract: HA 13001 2 sc 13001 CS 13001 si 13001 54s570 1KTN1 82S130A 54s571 MARKING S1G f4
Contextual Info: M1L-M-38510/204D IM Ü g f f .t t ” — MIL-M-36510/204C 31 J a n u a r y 1984 MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, 2048-BIT S C H O T T K Y , BIPOLAR, P R O G R A M M A B L E R E A D - O N L Y M E M O R Y PRO M , M O N O L I T H I C S I L I C O N

m1l transistor

Abstract: m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G

m1l SOT-23

Abstract: M1L marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon z We declare that the material of product LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

diode m1l

Abstract: M1L marking MA781
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA781 Silicon epitaxial planer type Unit : mm 0.28±0.05 1608 type SS-Mini type diode ● Surface mounting, enabling high-density mounting ● Fast t rr (reverse recovery time), optimum for high-frequency rectifi- 1 3

ma741

Abstract: M1L marking
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA741 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF and satisfactory wave detection efficiency Extremely low reverse current IR 2 +0.1

Contextual Info: Schottky Barrier Diodes SBD MA3S781 (MA781) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • High-density mounting is possible • Optimum for high frequency rectification because of its short

Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic

Contextual Info: [AK7722] AK7722 24bit 4ch ADC + 24bit 4ch DAC with Audio DSP GENERAL DESCRIPTION The AK7722 is a digital signal processor with an integrated 4ch 24bit DAC, a stereo ADC with input selector and a 2ch input ADC. The integrated 4ch DAC, the 2ch ADC with input selector and the other 2ch ADC

marking m1k

Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

VR-103 generator

Abstract: diode M1K marking m1k M1K MARKING MA3X704 MA3X704A M1L marking
Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Symbol Rating Unit VR 15 V MA3X704A 15 IFM 150 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59

m1l transistor

Abstract: MA3S781
Contextual Info: Schottky Barrier Diodes SBD MA3S781 Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For the switching circuit 3 Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Forward current (DC) IF 30 mA Peak forward current IFM 150

MA704A

Abstract: m1k diode ma704 M1L marking
Contextual Info: MA111 Schottky Barrier Diodes SBD MA704, MA704A Silicon epitaxial planer type 2.8 –0.3 +0.25 1.5 –0.05 1.45 0.95 0.65±0.15 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 Low forward rise voltage VF and satisfactory wave detection effi- 1.9±0.2 0.65±0.15

ma741

Abstract: MA3J741 MA3X704A MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic

Contextual Info: [AK7722] AK7722 24bit 4ch ADC + 24bit 4ch DAC with Audio DSP 概 要 AK7722は4chの24ビットDACと入力セレクタ付きステレオADCと2ch入力ADCを搭載したディジタルシグ ナルプロセッサです。内蔵される4chのDACは108dBセレクタ付2chのADCは96dBのダイナミックレンジ

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η

MA741

Abstract: MA3J741 MA3X704A
Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η)

Japanese Transistor Data Book

Abstract: diodes ir EIAJ standards Frequency Control Products MA3S781 MA781
Contextual Info: Schottky Barrier Diodes SBD MA3S781 (MA781) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 (0.80) 3 • High-density mounting is possible • Optimum for high frequency rectification because of its short

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7410G Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode ■ Features