MA3X704A Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Mini type of MA3X704A (MA704A)

MA3X704A

Abstract: MA6X718 MA704A MA718
Contextual Info: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a

MA3J741

Abstract: MA3X704A MA704A MA741
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η

Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic

marking m1k

Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

MA704

Abstract: MA3X704 MA3X704A MA704A diode M1K
Contextual Info: Schottky Barrier Diodes SBD MA3X704 , MA3X704A (MA704,MA704A) Silicon epitaxial planar type Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Unit VR 15 V 15 IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature

VR-103 generator

Abstract: diode M1K marking m1k M1K MARKING MA3X704 MA3X704A M1L marking
Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Symbol Rating Unit VR 15 V MA3X704A 15 IFM 150 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

electronic power generator using transistor

Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η

MA717

Abstract: MARKING 103 MA3X704A MA3X717 MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η

MA3J745

Abstract: MA3X704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short

MA3J745

Abstract: MA3X704A
Contextual Info: Schottky Barrier Diodes SBD MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short

MA741

Abstract: MA3J741 MA3X704A
Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η)

ma741

Abstract: MA3J741 MA3X704A MA704A
Contextual Info: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic

MA3X704

Abstract: MA3X704A MA704 MA704A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)

Contextual Info: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a

MA3J741

Abstract: MA3X704A M1L marking
Contextual Info: Schottky Barrier Diodes SBD MA3J741 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic

MA3X704

Abstract: MA3X704A MA704 MA704A marking m1k
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)