MA3J745 Search Results

MA3J745E

Abstract: MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2

Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification

MA3X704A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7450G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name

104 M3D

Abstract: MA3J745D MA3J745E MA745WA MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward voltage VF , optimum for low voltage rectification

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification

MA3J745D

Abstract: MA745WA
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features M Di ain sc te on na tin nc ue e/ d  Code SMini3-F2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745DG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Cathode 1 2: Cathode 2

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

electronic power generator using transistor

Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)

MA3J745D

Abstract: MA3J745E MA745WA MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745DG, MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J745DG 1: Cathode 1 2: Cathode 2

104 M3D

Abstract: MA3J745E
Contextual Info: Schottky Barrier Diodes SBD MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features

MA3J745

Abstract: MA3X704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short

MA3J745

Abstract: MA3X704A
Contextual Info: Schottky Barrier Diodes SBD MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short

MA3J745E

Abstract: MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745E (MA745WK) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward