M1F SOT23 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel LMBT5550LT3G M1F 10000/Tape&Reel LMBT5551LT1G

1N914

Abstract: LMBT5550LT1 LMBT5550LT1G LMBT5551LT1 LMBT5551LT1G sot-23 Marking M1F LMBT5551LT
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. LMBT5550LT1 LMBT5551LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1 M1F 3000/Tape&Reel LMBT5550LT1G Pb-Free M1F 3000/Tape&Reel LMBT5551LT1

LMBT5551LT1G

Abstract: 1N914 LMBT5550LT1G MMBT5550 MMBT5551
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel

Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551

MMBT5551

Abstract: MMBT5551 G1 1N914 MMBT5550
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551

Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160

MMBT5550

Abstract: MMBT5551 1N914
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ ƽ We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5550LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage

Contextual Info: Product specification MMBT5550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN Silicon 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5550LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM: 0.6

MMBT5550

Contextual Info: Transistors SMD Type High Voltage Transistors MMBT5550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN Silicon 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

sot-23 Marking M1F

Abstract: MMBT5550 nt1005 M1F SOT23
Contextual Info: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT5550 FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z High voltage transistors. z General purpose application. SOT-23

MMB5551

Abstract: mmt5551 1BT55 MMBT5550 MMBT5551 T5551 MVBT5551
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors E M IT E l M A X IM U M RATINGS Rating Col icdoi bmilitr Voilage Cofadof-Bastì voltage tmiLlûr Uaùü voilage Cül ICOlûr Cufrûril COMLiriutj S Symbol Vali.p V C EO vceo VEBO ic HO L6D 6.0 6DD Unit Vdc Vdc

Contextual Info: M AXIM U M RA TIN G S Symbol Value Unit C o lle cto r-E m itte r Voltage VCEO 140 Vdc Collector-B ase V o ltage VCBO 160 Vdc Em itter-Base Voltage v EBO 6.0 Vdc ic 600 m A dc Symbol Max Unit Pd 225 mW 1.8 m W /X Rb j a 556 °C/W Pd 300 mW 2.4 mW/°C r #j a

MMBT5550

Contextual Info: MCC TM Micro Commercial Components MMBT5550
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • NPN Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"

MMBT5550-M1F

Abstract: 1N914 MMBT5550
Contextual Info: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5550 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBT5550LT1 LMBT5551LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous

FMBT5550

Abstract: oc 140 npn transistor
Contextual Info: Formosa MS High Voltage NPN Epitaxial Planar Transistor FMBT5550 / FMBT5551 List List. 1 Package outline. 2

On semiconductor date Code sot-23

Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
Contextual Info: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage

sot-23 Marking M1F

Abstract: sot-23 MARKING CODE G1
Contextual Info: WILLAS FM120-M+ MMBT555xLT1 THRU High Voltage Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

1n914 SOD123

Abstract: sot-23 MARKING CODE G1 Sc59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage