M1207 Search Results

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD464518L, 464536L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT LVTTL INTERFACE Description The /¿PD464518L is a 262,144 words by 18 bits, and the /¿PD464536L is a 131,072 words by 36 bits synchronous

Contextual Info: Coaxial DC Block BNC 75Ω BLK-222-75+ 10 MHz to 2.2 GHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Input Voltage 100V Max. Features • low insertion loss • rugged unibody construction • off-the-shelf availability

mos marking 7e

Abstract: marking K4 4N marking H2 NEC
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD464518/36LS1 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT AND 128K-WORD BY 36-BIT Descriptions The µPD464518/36LS1 is a 262,144 words by 18 bits / 131,072 words by 36 bits synchronous static RAM

M1207

Abstract: SM33
Contextual Info: Case Style SM33 SM33 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 ADJACENT GROUND PINS SHALL BE CONNECTED TO EACH OTHER AND TO GROUND PAD CASE # A B C D E F G H J K L M N P SM33 .250 6.35 .300 (7.62) .050 (1.27) .310

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB644 3 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M SDRAM : //PD4564821 are assembled.

oz 9641

Abstract: RBP-130 GP731 F5130
Contextual Info: Metal Shield Bandpass Filter RBP-130+ 50Ω 95 to 180 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.25 W at 25oC • • • • High Rejection Small Size 0.35" X 0.35" Shielded case

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT JuPD23C32020A 32M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT Description The ¿¡PD23C32020A is a 33,554,432 bits 2,097,152 w ords by 16 bits m ask-program m able ROM. The active levels of OE (O utput Enable Input) can be selected with mask-option.

MC-458CA724-A10

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA724 8 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M SDRAM : µPD4564841 are assembled.

BPF-A76

Abstract: TB363
Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A76+ 74 to 77 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5W at 25oC • • • • Good VSWR, 1.3:1 Typ @ Passband High Rejection Shielded case

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

A20 marking

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000A 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000A is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).

SM31

Contextual Info: Case Style SM31 SM31 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 ADJACENT GROUND PINS SHALL BE CONNECTED TO EACH OTHER AND TO GROUND PAD CASE # A B C D E F G H J K L M N P SM31 .200 5.08 .200 (5.08) .070 (1.78) .275

Contextual Info: Ultra Low Noise Amplifier 50Ω ZX60-242LN+ 1710 to 2400 MHz Features • • • • • • Ultra Low Noise Figure, 0.75 dB typ. Output Power, up to +17 dBm typ. Good Output IP3, 33 dBm typ. Unconditionally stable Low Current consumption Protected by US Patent 6,790,049

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

transistor GW 93 H

Abstract: 11 ak 30 a4
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: Case Style SM34 SM34 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 ADJACENT GROUND PINS SHALL BE CONNECTED TO EACH OTHER AND TO GROUND PAD CASE # A B C D E F G H J K L M N SM34 .380 9.65 .400 (10.16) .070 (1.78) .420

Sa173b

Abstract: SA16
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD464518L, 464536L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT LVTTL INTERFACE Description The µPD464518L is a 262,144 words by 18 bits, and the µPD464536L is a 131,072 words by 36 bits synchronous

M1207

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458AB644 8 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M SDRAM : µPD4564821 are assembled.

BLK-222-75

Contextual Info: Coaxial DC Block BNC 75Ω BLK-222-75+ 10 MHz to 2.2 GHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Input Voltage 100V Max. Features • low insertion loss • rugged unibody construction • off-the-shelf availability

transistor d1047

Abstract: transistor m1104 D1047 TRANSISTOR D1960 Delta WPLSoft sample d1266 D1265 D1071 power transistor m1104 transistor m1104 185
Contextual Info: DVP-ES2 Operation Manual: Programming Table of Contents Chapter 1 – PLC Concepts 1.1 PLC Scan Method .1-2 1.2 Current

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M S D R A M : //PD4564841 are assembled.

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3

sm-1

Contextual Info: Case Style SM1 SM1 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 ADJACENT GROUND PINS SHALL BE CONNECTED TO EACH OTHER AND TO GROUND PAD CASE # A B C D E F G H J K L M N P SM1 .250 6.35 .300 (7.62) .070 (1.78) .290 (7.37)