M/LD 575 PS Search Results

M/LD 575 ps

Contextual Info: m o le x SEMCONN FEATURES AND SPECIFICATIONS Features and Benefits Mechanical • Pre-assembled 1-piece shield Cable Pull-Out Force: 30 lb min. ■ Nonmetollic shield cover optional Plug to Socket Latch Strength: 15 lb min. ■ 3 strain reliefs Mating Force: 1.4 lb

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,

Contextual Info: IL-WXSERIES CONNECTORS 0.8m m .0 3 1 ” Contact Spacing, PCB-to-PCB S M T Connectors IL-W X Series c o n n e c to rs are designed fo r b o a rd -to -b o a rd a p p lica tio n s. D esigned w ith e xtrem ely sm all sp acing, centers are on 0.8mm (.031") w ith double ro w c o n ta c t arrangem ent. The

45N03L

Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
Contextual Info: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 4-Input OR/NOR G ate MC10E101 MC100E101 The MC10E/100E101 is a quad 4-input OR/NOR gate. • 500ps Max. Propagation Delay • Extended 10OE V e e Range of - 4.2V to - 5.46V • 75kU Input Pulldown Resistors QUAD 4-INPUT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 4-Input OR/NOR G ate MC10E101 MC100E101 The MC10E/100E101 is a quad 4-input OR/NOR gate. • 500ps Max. Propagation Delay • Extended 100E V e e Range of - 4.2 V to - 5.46V • 75kS2 Input Pulldown Resistors QUAD 4-INPUT

16N03LS

Abstract: 16n03l 9312v 03LSM 16N03
Contextual Info: RFD16N03L, RFD16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model

ES-88

Abstract: MS7131 015-83-0566
Contextual Info: 12 11 10 3 M S - 7 I3 I 0 - 0 / 3 * * * E .D .P. NUM BER ENG, N UM BER 7 8 6 5 KEYING OPTION ”1" KEYING OPTION ”2” M S - 7 13 10- 1/4* M S - 7 13 1 0 - 2 / 5 * * * NON-KEYED OPTION ENG- NUM BER E .D .P. NUMBER E.D .P. NUM BER HSG„ ENG. NUM BER 3

Contextual Info: Philips Semiconductors Product specification Low voltage Compandor NE/SA575 PIN CONFIGURATION DESCRIPTION The N E /S A 5 7 5 is a p recision dual gain co n tro l circuit desig ned for N, D 1 a n d D K P a c k a g e s low voltage app lications. The N E /S A 5 7 5 ’s chan nel 1 is an

RC64575

Abstract: idt79rc64t575 RC32364 RC4640 RC4650 RC5000 RC64474 RC64475 28g0 128pin QFP sd
Contextual Info: RC64574 RC64575' Advanced 64-bit Microprocessors Product Family Preliminary Information* ♦ Big- or Little-endian capability Features High-performance 64-bit embedded Microprocessor * - 333MHz operating frequency >440 Dhrystone MIPS performance 666MFLOPS/S floating-point performance

APT6039BNR

Contextual Info: A dvanced P ow er Te c h n o l o g y O D APT6039BNR OS GZ* W E R M O S m 600V 17.0A 0.39H AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter D rain-S o urce Voltage

1461 smd

Contextual Info: nixYS AdvancedTechnical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated V* DSS = ^D25 P DS on “ 800 V 2A 5.5 Q — Symbol Test Conditions VDSS Tj =25°Cto150°C 800 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2

Contextual Info: PD - 9.1320B International IG R Rectifier IRLI3803 HEXFET Power M O SFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm

w 5753

Contextual Info: O bjective s p ecifica tio n P h ilips S e m ico n d uctors RF C om m u n ica tio n s P roducts Audio processor - filter and control section PIN CONFIGURATION DESCRIPTION FEATURES T he N E /S A 575 3 is a high perform ance low pow er CM O S aud io sig nal processing system

Contextual Info: TRU 600A ' 4 ,* V ;• < p ' V v Features SAW filte r Based Tinning Recovery Module N om inal C lock Frequency S up ply C urrent Typical Output Jitter Below 10 ps S up ply Voltage Data Rate Output Options from 124 416 M b/s to 6 2 2 4 6 M tvs D ata input Low

IL-WX

Abstract: 4N34 IL-WX-18PB-VF-B
Contextual Info: IL-WX SERIES CONNECTORS 0,8mm .031" Contact Spacing, PCB-to-PCB SMT Connectors IL -W X S e rie s c o n n e c to rs are d e sig n e d fo r board -to -bo ard applications. D e sig n e d w ith extrem ely sm all sp a c in g , ce n te rs are on 0.8mm (.031") w ith double ro w co n ta ct arrangem ent. The

100310QC

Abstract: 100310QI MO-047 V28A
Contextual Info: 100310 Low Skew O ctober 1991 F A IR C H IL D Revised N ovem ber 1999 S E M I C O N D U C T O R TM 100310 Low Skew 2:8 Differential Clock Driver Features • Low output to output skew The 100310 is ideal for those applications that need the ability to freely select between tw o clocks, or to m aintain

tl 2262 am

Abstract: L55c 6265N integrated circuit TL 2262 l8045
Contextual Info: LM6165/LM6265/LM6365 National Semiconductor LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM 6165 fam ily o f high-speed am plifiers exhibits an ex­ celle n t speed-pow er product in delivering 300 V /fxs and 725 MHz GBW stable for gains as low as + 25 w ith only

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • b b S S ' m DD3QaflD 33T W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

ru 94v0

Contextual Info: FACTSHEET F-199 amtec LOW COST SOCKET STRIPS Mates w ith: TS, HTS, BBS, BBL, BHS, LBS s s a H hm i I I p onsoit ioo fn s LEAD STYLE PLATING OPTION SSA SERIES RA OPTION Specifications: SSA Insulator Material: Black PET Polyester F lam m ability R ating: UL 94V-0

wifi 5 watt amplifier circuit

Contextual Info: National LM6165/LM6265/LM6365 & Semiconductor LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM6165 family of high-speed amplifiers exhibits an ex­ cellent speed-power product in delivering 300 V//xs and 725 MHz GBW stable for gains as low as + 25 with only

PAA 725

Abstract: E20A LM6165 LM6265N LM6365N W10A LM63 S1527
Contextual Info: Semiconductor LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM6165 family of high-speed amplifiers exhibits an ex­ cellent speed-power product in delivering 300 V/|u.s and 725 MHz GBW stable for gains as low as + 2 5 with only

HPMA-0435

Abstract: HPMA-0400 monolithic amplifiers HPAC-100X
Contextual Info: Silicon Bipolar Monolithic Amplifiers Technical Data HPMA-0400 HPMA-0435 Features CH IP OUTLINE HPMA-0435 •3 dB Bandwidth: DC to 3.8 GHz ■8.3 dB Gain at 1 GHz ■Unconditionally Stable HPMA-0435 HPMA-0400 ■3 dB Bandwidth: DC to 4.2 GHz ■8.3 dB Gain at 1 GHz

history of microprocessor 8086

Abstract: lt 543 addressing modes of 8086 microprocessor ICD-486 microprocessor 8086 flag register CACHE MEMORY FOR 8086 LT543 instruction set of 8086 microprocessor 8086 memory organization 5126
Contextual Info: i486 MICROPROCESSOR CONTENTS CONTENTS page 1.0 TABLE OF CONTENTS . page 2.7.8 Double F a u lt.5-43 2.7.9 Floating Point Interrupt Vectors . 5-43 5 2 Pinout. 5-6