LX5510LQ Search Results

LX5510LQ Datasheets (4)

Filter by Manufacturer

Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LX5510LQ		Microsemi	Wireless LAN Power Amplifier	Original	PDF	331.35KB	9
LX5510-LQ		Microsemi	InGaP HBT 2.4-2.5 GHz Power Amplifier	Original	PDF	637.19KB	7
LX5510LQT		Microsemi	Amplifier, InGaP HBT 4-6GHz Power Amplifier, Tape And Reel	Original	PDF	637.19KB	7
LX5510-LQT		Microsemi	InGaP HBT 2.4-2.5 GHz Power Amplifier	Original	PDF	637.19KB	7

LX5510LQ Price and Stock

Filter by Manufacturer

Select Manufacturer


Microsemi Corporation (now Microchip) LX5510LQ-TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	LX5510LQ-TR		507			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	LX5510LQ-TR		251			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microsemi Corporation LX5510LQ-TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LX5510LQ-TR		200			1 $3.92 10 $3.92 100 $1.96 1000 $1.81 10000 $1.81	Buy Now

LX5510LQ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.	Original	LX5510 45GHz 19dBm 125mA 19dBm 64QAM 54Mbps LX5510	PDF
Contextual Info: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.	Original	LX5510 45GHz 19dBm 125mA 19dBm 64QAM 54Mbps LX5510	PDF
LX5510 Abstract: LX5510LQ-TR LX5510LQ MLPQ 40 Contextual Info: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias.	Original	LX5510 19dBm 64QAM, 54Mbps) LX5510 16-pin 11b/g LX5510LQ-TR LX5510LQ MLPQ 40	PDF
LX5510-LQT Abstract: diode dc components m7 footprint LX5510 LX5510-LQ bipolar transistor 2.4 ghz s-parameter Contextual Info: C O N F I D E N T I A L LX5510 I N T E G R A T E D P R O D U C T S InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of	Original	LX5510 19dBm 64QAM, 54Mbps) 120mA 23dBm. LX5510 16-pin 11b/g LX5510-LQT diode dc components m7 footprint LX5510-LQ bipolar transistor 2.4 ghz s-parameter	PDF
Contextual Info: LX5510 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For +19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias. With increased bias of 5 V EVM is ~	Original	LX5510 19dBm 64QAM, 54Mbps) LX5510 16-pin 11b/g	PDF