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North Slope Chillers NSC1000-LT-230-1 Chiller, 1 Ton, 10F to 45F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NSC1000-LT-230-1	Bulk			1	1 $8156.00 10 $8156.00 100 $8156.00 1000 $8156.00 10000 $8156.00	Buy Now
North Slope Chillers NSC2000-LT-230-1 Chiller, 2 Ton, 10F to 45F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NSC2000-LT-230-1	Bulk			1	1 $9857.00 10 $9857.00 100 $9857.00 1000 $9857.00 10000 $9857.00	Buy Now
Samtec Inc TW-30-04-L-T-230-130
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TW-30-04-L-T-230-130					1 - 10 $12.34 100 $9.26 1000 $4.04 10000 $4.04	Buy Now
Samtec Inc MTSW-150-24-L-T-230-100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-150-24-L-T-230-100					1 - 10 $10.45 100 $8.20 1000 $5.41 10000 $5.41	Buy Now
Samtec Inc MTSW-140-24-L-T-230-100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-140-24-L-T-230-100					1 - 10 $10.45 100 $8.20 1000 $5.41 10000 $5.41	Buy Now

LT2301 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LT2301A Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V	Original	LT2301A 300us, 2007-Ver3 OT-23	PDF
LT2301A Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V	Original	LT2301A 2007-Ver3	PDF
Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V	Original	LT2301A 300us, OT-23	PDF
Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V	Original	LT2301 LT2301 300us, OT-23	PDF
LT2301 Abstract: LT230 Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V	Original	LT2301 LT2301 300us, 2008-Ver1 OT-23 LT230	PDF
LT2301 Abstract: 20A SOT-23 Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V	Original	LT2301 LT2301 2008-Ver1 20A SOT-23	PDF
LSP5522L Contextual Info: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0	Original	SMAJ12A/ SMAJ24A B340A/ B360B B240A B2100A 1N5819WL FB340LM BAT54A/C/S 1N4148W/ LSP5522L	PDF