LT 737 DIODE Search Results

LT 745 S

Abstract: mpn7
Contextual Info: M ETELICS CO RPO RA TIO N MPISI 7451, 7454 400 V o lt P in Diodes 975 Stewart Drive Sunnyvale, CA 94086 Telephone: 408 737-8181 TWX: 910-339-9537 FSCM & CAGE 59365 Maximum Ratings Features • Low Rs • >400 Volt Vgp • Very low reverse leakage current

Contextual Info: METELICS CORP T-07-15 11E I METELICS CORPORATION DGQÛ124 ä | MPN 7451, 7454 400 V o lt Pin Diodes 975 Stewart Drive Sunnyvale, CA 94086 Telephone: 408 737-8181 7WX: 910-339-9537 FSCM & CAGE 59365 Maximum Ratings F e a tu r e s • • • • • bOS135a

SE-05

Abstract: SE05 IC22 Packages 1 FSCM 59365 MPN7
Contextual Info: M ETELICS CO RPO RA TIO N M PN 7451, 7454 400 V o lt P in Diodes 975 Stewart Drive Sunnyvale, CA 94086 Telephone: 408 737-8181 7W X: 910-339-9537 FSCM & C AG E 59365 Features Maximum Ratings • L o w Rs Storage Tem perature. - 6 5 t o + 150°C

IN3595

Abstract: jedec package TO-236AA IN6099 J029 ll3595 1N3595 1N6099 FDLL3595 FDLL6099 TO-236AA
Contextual Info: i 3 p a ir c h ild • £ £ £ £ !£ A Schlumberger Compan' 1 N3 5 9 5 / 6 0 9 9 FDLL3 5 9 5 / 6 0 9 9 H ig h C o n d u c ta n c e LOW Leakage Diodes • B V . . 1 5 a v M IN @ 100 fiA PACKAGES • VF 1N3595 1N6099 FDLL3595 FDLL6099 1 . 0 V @ 200 mA ABSOLUTE MAXIMUM RATINGS (Note 1)

LT 7220

Abstract: TL024 TL016 dl 0165 TL018 TL007 TL019 LT 1740 AT1005 TL025
Contextual Info: PHASE CONTROI Type Silicon diam. V rrm V DRM max AT 403 AT AT 405 505 •t AV Sine wave 180° Th = 55°C (A) (mm) (V) 17 17 600 1200 345 250 25 1600 1600 ■r m s 375 590 420 5.0 5.7 7.9 720 1600 555 870 704 804 31 38 1600 1600 600 880 807 818 38 38 AT 1003

Contextual Info: !1 M !0 0 _ J < E N N E D Y M S C O R F _ K E N N E D ^ T r T s i T C 0 R p 'ü 3 q 3E0 0 1 4 0 D 1 > F | s 13430G 0DDG14G 5 J~ 737serie: General Description Offset Null T h e M S K 737 is a h ig h p e rfo rm a n c e o p e ra tio n a l a m p lifie r

Contextual Info: M U R I 0005CT R DACO SEMICONDUCTOR CO., LTD. THRU M U R I 0060CT(R) SUPER FAST DIODE MODULE TYPES 100A Features High Surge Capability 1 0 0 A m p R e c t if ie r Types Up to 60 0V Vrrm 5 0 - 6 0 0 V o lt s TWIN TOWER 4- A R Maximum Ratings Maximum RMS Voltage

adb 420

Abstract: DB800
Contextual Info: 2fl4Tio7 nnoDiua tû i DIOTEC E L E C TRONICS CORP SflE J> DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B n T r Gardena, CA 90248 U Á .L Tel.: 310 767-1052 Fax: (310)767-7958 mvix Data Sheet No.: BRDB-800-A _ ABDB-800-A 'TZ'b'Ol DBaOO/ADBaOQSflflM 8 AMP SILICO N BRIDGE R EC T IFIER S

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

SCC100G

Abstract: SCC05DN lm358z SCC100AHO SCC100AH SCC30DN SENSYM SCC15A Wheatstone Bridge operational amplifier lm324 wheatstone bridge with temp. sensor SCC15D
Contextual Info: SENSYM INC SenSym 4^E J> m 34^73? O D D l^B B77 • SNY SCC05, SCC15, SCC30, SCC100 0 to 5 psi, 0 to 15 psi, 0 to 30 psi, 0 to 100 psi Pressure Sensors J~~- C S~ - / S FEATURES ■ Low Cost Sensor Element ■ Internal Temperature Compensation ■ Differential or Gage Pressures

Contextual Info: HOA086X/087X Transmissive Sensor FEATURES . Phototransistor output • Accurate position sensing • Four mounting configurations • 0.125 in. 3.18 mm slot width • Choice of detector aperture • Choice of opaque or IR transmissive housings DESCRIPTION

Contextual Info: MITSUBISHI <UNEAR ICs> MS1207L DUAL COMPARATOR DESCRIPTION PIN CONFIGURATION TOP VIEW • • • • Low Input curret (high input resistance) 20nA(typ.) Wide supply voltage range. 2.5V~28V Low dissipation current. 3.8mA(typ.)

ANT019

Abstract: temic transponder U2270 kit u2270b demo BC639 collector temic transponder 2270B 12 temic transponder TK5530-PP TK5560-PP 2270B
Contextual Info: U2270B Read / Write Base Station IC Description IC for IDIC * read-write base stations The U2270B is a bipolar integrated circuit for read-write base stations in contactless identification and immobilizer systems. specific distances. It also includes all signal-processing

R362T

Abstract: LT 737 diode 362t H738
Contextual Info: TOSHIBA TC74HC4511AP/AF BCD-to-7 Segment Latch/Decoder/Driver TheTC74HC4511A is a high speed CMOS BCD-TO-7 SEGMENT LATCH/DECODEFVDRIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: I IT C W l^ l * EÄ J kI T -l3/4 5mm Ultra Bright A lInG aP Amber L E D Lamps LTL2F3VAK LTL2H3VAK LTL2P3VAK LTL2R3VAK 8degree 15degree 22degree 30degree Package Dimensions Features Very high luminous intensity output. Low power consumption. High efficiency.

Contextual Info: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation

Contextual Info: INTERNATIONAL RECTIFIER bSE D • M Û 5 5 4 5 5 Q 0 1 b E b 3 45b ■ INR Bulletin E27103 International liÔRlRectifier IRFK4H054,IRFK4J054 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration ■ • • • High Current Capability. UL recognised E78996.

HOA088X

Abstract: HOA089X SDP8406 SEP8506 HOA0880 HOAO88X mW111
Contextual Info: HOA088X/089X Transmissive Sensor FEATURES • Phototransistor output . Four mounting configurations « Accurate position sensing . 0.125 in. 3.18 mm slot width • Choice of detector aperture • 24.0 in. (610 mm) min. 26 AWG UL 1429 wire leads • Choice of opaque or IR transmissive housings

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

marking 2U diode t5

Abstract: 3A110A 24-0-24 transformer 16J3 8a33 3a70 52s marking code 3a120 marking DIODE 2U 04 marking 2U diode
Contextual Info: E TAIWAN SEMICONDUCTOR tò RoHS SA SERIES 500 W atts Transient Voltage S uppressor Diodes DO-15 COMPLIANCE n l.'-IZSM Features MM. P la s tic p a c k a g e h a s U n d e rw rite rs L a b o ra to ry F la m m a b ility C la s s ific a tio n 9 4 V - 0 □ 5 0 0 W s u rg e c a p a b ility a t 1 0 X 1 0 0 0 us

temic transponder

Abstract: Pin configuration of 356N 8 pin IC 356N CIRCUIT DIAGRAM OF BD139 140 Temic Semiconductors rfid Transponder ID 46 crypto TK5560 Temic E5550 IDIC chip BZX55C LF antenna design
Contextual Info: Identification Systems Identification Systems Table of Contents Identification Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Basic Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: AMERICAN POWER D E V IC E S 5TE D 0 737 135 00G0077 american SEM ICO N D U CTO R S 4T1 • A P D /-H -JlS 1N6267 - 1N6303 1N6267A - 1N6303A p o w e r d evices, inc. 1500 W silicon voltage transient suppressors FEATURES MAXIMUM RATINGS • 1500 W of peak pulse power

irfae42

Abstract: JRFAE42
Contextual Info: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package

bts 2106

Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
Contextual Info: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and