LT 543 IC Search Results

Maxlinear

Contextual Info: Bulletin 125158/B International S R ectifier ST300S S E R IE S PHASE CONTROL THYRISTORS Stud Version Features 300A • C enter a m plifying gate ■ H erm etic m etal case w ith ceram ic insulator ■ In ternational standard case TO -209AE TO -118 ■ Threaded studs UNF 3/4 - 16UNF2A or ISO M 24x1.5

IR 427B

Abstract: allen torque
Contextual Info: TÈmmsêBeUs NEMA Terminal Blocks Ultra Heavy Duty D e s c r ip t io n / A p p l ic a t io n This Ultra Heavy Duty line includes two series. The 400 series is rated up to 270 A; the 444 series is rated up to 400 SERIES ULTRA HEAVY DUTY 455 A. D e s ig n A

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

Contextual Info: H M -6543 ìli HARRIS SEM ICO N D U CTO R P R O D U C T S DIVISION A D IVISION OF HARRIS CORPORATION 4096 x 1 C M O S R A M Pinout Features TO P V IE W H M -6 1 0 0 C O M P A T IB L E - ^ 2 2 ] VCC A6C 1 LOW POWER S T A N D B Y . 1mW M A X

2N6904

Abstract: L051 2N6895 QPL-19500 2N6904 JANTX 2N6901 2N6903 2N6901 JANTXV 741 terminal
Contextual Info: Logic-Level Power MOSFETs 2N6904 F ile N u m b e r 1880 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 8 A, 200 V r D s ( o n ) : 0.6 ft N-CHANNEL ENHANCEMENT MODE Features: • D e s ig n o p tim iz e d f o r 5 v o lt g a te d riv e ■ C a n b e d riv e n d ir e c tly fr o m Q -M O S ,

Contextual Info: I n ter n a tio n a l MB2505 S e m ic o n d u c to r , I n c , thru MB2510 HIGH CURRENT SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 25.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Case insulation greater than 2000 volts

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

TMPZ84C10A

Abstract: TMPZ84CO TMPZ84C00AP-6 TMPZ84C00AM-6 MPUZ80-40 84c00a Sx09Sx TMPZ84C20
Contextual Info: T O S H IB A TMPZ84C00A TMPZ84C00AP-6 /TMPZ84C00AM-6 /TMPZ84C00AT-6 TMPZ84C00AP-8 / TMPZ84C00AM-8 /TM PZ84C00AT-8 TLCS-Z80 MPU : 8-BIT MICROPROCESSOR 1. OUTLINE AND FEATURES T h e T M P Z 84C 00A is a n 8-b it m icroprocessor h ere in a fter referred to a s M P U , w hich

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

Contextual Info: n m ic AN6811 A N 6811 3 , 4 , 8 , 1 2 , 1 6 I # J D [ h] S £ / 3 , 4 , 8 , 1 2 , 1 6 ^ /D e sc rip tio n AN 6811 i±, I 4 7 ' y 7"7 o y 1/4 LT iS t/F ea tu res • « 7 ' ] y 7 ’7 D y 7 “T", Q , • -fe y • D iv id er Q 2 ¿ ‘I # -£ £ - • Q,

Contextual Info: 2013-01-11 PointLED Datasheet Version 1.0 LT P4SG reverse mount With a diameter of just 2 mm, the PointLED is one of the smallest packages in its class and achieves high luminous efficacies. Due to its round and flat package, measuring only 0.775 mm high, it is ideal for

3M Touch Systems

Contextual Info: Advanced Power TOPLED Plus Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LD G5AP, LT G5AP Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, klarer Silikon - Verguss, klare Silikonlinse • Besonderheit des Bauteils: mehr Licht durch

Contextual Info: 6 © © © ro F &I5 NOTES . S S ia P f W a c ^ L 'r H , 0 f f i S D - 5 4 3 9 3 - O 2 2 £ # B r r a u RE DETA IL ED DIMENSION, SE E 5 D - 5 4 3 9 3 -0 2 2 . 2 . + B-S3M : 2 0 0 0 I S / U - I L NUMBER OF CONNECTORS : 2 O 0 0 P C S / R E E L 3. U - K © - ^ J i a LEAD TA P E LENGTH

Contextual Info: L 7 L I H ^ A B _ LTC1483 TECHNOLOGY Ultra-Low Power RS485 Low EMI Transceiver with Shutdown K flT U IK S D € S C R IP T IO n • Low Power: Ice = 120jjA Max with Driver Disabled ■ Ice = 500|iA Max with Driver Enabled, No Load

OS-PCN-2012-008

Contextual Info: Hyper SIDELED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB A6SG, LT A6SG Released Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Silikon-Verguss • Besonderheit des Bauteils: mehr Licht durch

Contextual Info: 2014-01-21 OSLON Signal Datasheet Version 1.1 LT CQBP OSLON Signal 120 OSLON Signal 120 Features: Besondere Merkmale: • Package: SMD ceramic package with silicone resin with lens • Technology: ThinGaN UX:3 • Viewing angle at 50 % IV: 130° • Color: true green (528 nm)

Q65110A8683

Abstract: Q65110A8679
Contextual Info: OSLON SX Lead Pb Free Product - RoHS Compliant LD CN5M, LT CN5M Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss und Linse • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf

Contextual Info: N ~P > V 7s $ /T ra n sisto rs IM Z2 IMZ2 — f t x ' M ! / G e n e r a l Small Signal Amp. Isolated Mini-Mold Device • • £fJF2\r>$IIl/D irnensions U nit : mm PN <D 2f@<7) t N ~t PNP Vr V' V' 'di 1) SMT (SC-59) i r U — h 7 > y X ^ ''A o T l'5 „

TLC543

Contextual Info: TLC543M , TLC543I, TLC544M , TLC544I 8 BIT A N A LO G TO DIGITAL PERIPHERALS WITH SERIAL CONTROL AN D 5 INPUTS I | D 2 7 9 9 , SEPTEMBER 1986 D. J , OR N PAC KAG E TOP VIE W • LinCMOS1“ Technology • 8-Bit Resolution A/D Converter • On-Chip 6-Channel Analog Multiplexer

Contextual Info: 2013-06-21 TOPLED Datasheet Version 1.2 LT TTSD TOPLED, SMT LED with integrated reflector. With our great experience in SMT LED we are able to offer a high quality product for all kind of applications. TOPLED, SMT-LED mit integriertem Reflektor. Mit unserer großen Erfahrung in SMT LED sind wir in der

GE2 TRANSISTOR

Abstract: CM50DY-12E BP107
Contextual Info: bME D m 72T4L21 Ü00b712 fl34 « P R X m CM50DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POIÜEREX INC S O T ÌG S M o d u l ò

Contextual Info: Advanced Power TOPLED Plus Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LD G5AP, LT G5AP Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, klarer Silikon - Verguss, klare Silikonlinse • Besonderheit des Bauteils: mehr Licht durch

LTG5AP

Contextual Info: Advanced Power TOPLED Plus Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LD G5AP, LT G5AP Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, klarer Silikon - Verguss, klare Silikonlinse • Besonderheit des Bauteils: mehr Licht durch

2N6849

Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
Contextual Info: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds