LT 175 1111 Search Results

Contextual Info: polyfet rf devices F1280 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

Contextual Info: VARACTOR TUNING DIODES C a p acitan ce Figure o f M erit at v„=4 o v Q at 4 0 V and and SO MHz f»1 0 M Hz i :4 E 9 lC . . P ro d u c t H ighlights P a rt N u m b er l l l l l l l l l l l i 1111 § 1 1 W C733 W C736 VVC741 iiS lis C a p a c ita n c e R atio

SK100ELT20W

Abstract: SK10ELT20W lt 419 LT 412
Contextual Info: SK10/100ELT20W LVTTL to Diff LVPECL or TTL to Diff PECL Translator HIGH-PERFORMANCE PRODUCTS Description Features • The SK10/100ELT20W is a single LVTTL to LVPECL and TTL to PECL translator. Because PECL / LVPECL levels are used, only VCC = +3.0 to +5.5V and ground are required.

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

Contextual Info: 8 1992 / " T lin t A R TECHNOLOGY _ _ LT1103/LTn 05 O fflin e S w itc h in g R e g u la to r F€ ftTU R € S D € S C M P T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1103 Offline Switching Regulator is designed for high input voltage applications using an external FET

Contextual Info: Comlinear Corporation Wideband, Low Distortion D r i \$ L - a m p s 1111 APPLICATIONS: • output amplification • arbitrary waveform generation • ATE systems • cable/line driving • function generators • SAW drivers • flash A /D driving and testing

Contextual Info: SiG E C P L E S S E Y S E M I C O N D U C T O R S DS4089-3.1 DG306AE25 GATE TURN-OFF THYRISTOR APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies KEY PARAMETERS 600A 'TCH 2500V DRM 225A 1000V/|iS dly'dt

A1128LUA-T

Abstract: A1128LLTTR-T
Contextual Info: A1128 Highly Programmable Hall-Effect Switch Features and Benefits Description • Chopper stabilization for stable switchpoints throughout operating temperature range • Externally programmable: ▫ Operate point through the VCC pin ▫ Output polarity

6N135-136

Abstract: o-50 N136
Contextual Info: 6N135 6N136 SIEMENS HIGH-SPEED 2.5 kV TRIOS OPTOCOUPLER FEATURES • Isolation Test Voltage: 2500 VAC, 1 min. •TTL Compatible * High Bit Rates: 1 Mbit/s ■ High Common-Mode Interference Immunity * Bandwidth 2 MHz * Open-Collector Output * External Base Wiring Possible

Contextual Info: LOW-NOISE AM PLIFIERS [CONT.J MODEL NUMBER OPERATING FREQUENCY GHz] GAIN (dB, Min. GAIN FLATNESS (±dB. Max.] NOISE FIGURE (dB, Max.] OUTPUT POWER (dBm. Min.) VSWR IN/OUT (Max.) DC POWER @ +15 V (mA. Nom.| OUTLINE DRAWING 122586 MODERATE BAND LOW-NOISE AMPLIFIERS (CONT.)

DG648

Contextual Info: M ITEL DG648BH45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4093 - 2.2 DS4093 - 2.3 March 1998 KEY PARAMETERS 'tcm 2000A V drm «GOV l„ 745A 1000V/|iS dTV > d i- j/ d t 300A/ iS APPLICATIONS • Variable speed A.C. motor drive inverters (VSD-AC .

TLE2074

Abstract: D4078 TLE2074A TLE2074ACDW TLE2074ACN TLE2074CDW TLE2074CN TLE2074Y
Contextual Info: TLE2074, TLE2074A, TLE2074Y EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT QUAD OPERATIONAL AMPLIFIERS S LO S 123 - D 4078, JUNE 1993 [available features * * * * 28-V/n,s Slew Rate Min Low Noise 17 nV/VHz Max at f = 10 kHz 11.6 nVA/fii Typ at f = 10 kHz High-Gain Bandwidth Product. . . 10 MHz

Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS iiP B 1 5 0 6 G V , ¿ P B 1 5 0 7 G V 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS The ¿¿PB1506GV and ¿¿PB1507GV are 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner

phototransistor sensor

Abstract: FPA700A FPA700 FPA710 FPA710A FPA720 FPA720A phototransistor array element sensor
Contextual Info: 1-111 Photo Sensors Cont’d Matching Factor •oilT(Min) Device No. Description •oUT(Max) VcE(sat) <CE(lt) Ip = 50 mA H = 10 m W /cm 2 H = 20 m W /cm 2 v CEO lç = 500 mA VCE = 5.0 V ■CE lg - 1.0 mA Tung. @ 2854°K mA V V mA Distance = 0 .0 5 ' Typ

LT1786F

Abstract: 49/CTX210605 ccfl lamp circuit diagram
Contextual Info: r r u n _ LT1786F m TECHNOLOGY FCRTURCS • Wide Battery Input Range: 4.5V to 30V ■ Grounded La m p or Floating La m p Configurations SMBus P ro g ra m m a b le CCFL S w itching R egulator to-lamp-current control” and communicates using the

x727

Abstract: delta PEF 2091 N V5.3 peb 2091 errata PEB 2091 N TQFP-64 PEF2091 TF013
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Delta Sheet 09.98 DS 1 PEB/F 2091 Revision History: Original Version: 09.98 Previous Version: Point Point in previous (in new Version Version) Subjects (major changes since last revision)

peb 2091 errata

Abstract: smd code marking 27H
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Delta Sheet 09.98 PEB/F 2091 Revision History: Original Version: 09.98 Previous Version: Point in previous Version Point (in new Version) Subjects (major changes since last revision)

lt 8242

Abstract: PILKOR 468 mkt fa322 PILKOR WK 05 45 MKT 468 250V capacitor
Contextual Info: Product Approval Sheet Customer : WPI Issued no : 2014. 09. 22. Revision no : ƒ Product description : Metallized Polyester film capacitors ƒ Product code : PCMT PCMT 468 468zzzzz S0122 ~ PCMT 468 S0129 ƒ Application : CUSTOMER Checked Confirmed Approved

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40

Contextual Info: N AMER PHILIPS/DISCRETE bSE I> • 0021711 TTfl APX BLY91C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

6DE7

Abstract: 6de7 tube
Contextual Info: 6DE7 Dual Triode With Medium -Mu Unit and Low-Mu Unit 9-PIN MINIATURE TYPE GENERAL DATA Electrical: H ea ter C h a r a c t e r i s t i c s and R a t in g s D e s ig n - M a xi m um V a L u e s : V o lt a g e {AC o r D C ). . . . . 6.3 ± 0.6 voi t s

tip140 texas instruments

Abstract: texas instruments tip142 texas instruments tip140 TIP146
Contextual Info: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP140, TIP141, TIP142 • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100 m j Reverse Energy Rating TYPES TIP145, TIP146, TIP147

6293 tube

Abstract: RCA tube 46 6293 tupe 46 tube rs tube RCA tube 76
Contextual Info: 6293 Beam Power Tube For Pulse-Modulator S e r v ic e GENERAL DATA E le c tr ic a l : H eater, fo r Uni p o te n tia l Cathode: . . . . Vo ltag e AC or DC . . . . Current at heater v o lt s - 6.3 . Transconductance, fo r p la te v o lts = 200, grid-No.2 v o lt s = 200, and pl ate

Contextual Info: August 1995 74F524 8-Bit Registered Comparator General Description The ’F524 is an 8 -bit bidirectional registe r w ith parallel input and output plus serial input and output progressing from LSB to MSB. All d ata inputs, serial and parallel, are loaded