LS22L2 Search Results

Contextual Info: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V

Contextual Info: NEZ6472-15D NEZ6472-15DD NEZ6472-8D NEZ6472-8DD NEZ6472-4D NEZ6472-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES • HIGH P o u t 18W 42.5 dBm Typ PidB for NEZ6472-15D/15DD 9W (39.5 dBm) Typ PidB for NEZ6472-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ6472-4D/4DD

2sc2952

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband

Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

Contextual Info: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V

Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier  GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

NJM2278

Abstract: MURATA LQW18A NJM2278F1 RF 24N GRM21 LQW18A rf power amplifier 400MHz
Contextual Info: NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to

NJM2275

Abstract: NJM2275F 1K 1608
Contextual Info: NJM2275 Under Development RF AMPLIFIER FOR VHF/UHF LOW BAND GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2275 is a low current, low voltage RF amplifier, especially designed for VHF/UHF(low) band. The center frequency of this narrow band amplifier is changed by external components.

KT 783

Contextual Info: NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD NEZ4450-4D NEZ4450-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18 W 42.5 dBm Typ PidB for NEZ4450-15D /15D D 9 W (39.5 dBm) Typ PidB for NEZ4450-8D/8DD 4.5 W (36.5 dbm) Typ PidB for NEZ4450-4D/4DD