IS12I2 Search Results

Contextual Info: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage

Contextual Info: IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip April, 1991 O ava ntek IVA-05200 Chip Outline Features • • • • • • • Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates High Gain: 30 dB typical

Contextual Info: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

vHF amplifier module

Abstract: philips if catv amplifier wideband amplifier philips ferrite material specifications
Contextual Info: N AUER PHILIPS/DISCRETE b'ïE D ^ 5 3 ^ 3 1 DDBSS'ìl 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

MSA806

Abstract: msa80 philips Q 522 philips if catv amplifier
Contextual Info: N AMER PHI LI PS/DISCRE TE b^E D • bbSB^l D0325bb GT1 ■ APX P hilips S em iconductors Prelim inary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

TOA 2050

Abstract: philips hybrid amplifier modules CI 4609 56918
Contextual Info: Philips Semiconductors Preliminary specification Hybrid wideband amplifier OM956/1 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use as an IF amplifier for satellite television and as a general purpose amplifier in the range 950 to 2050 MHz.

MSA806

Abstract: philips if catv amplifier gt 6312 philips MATV amplifiers
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

Contextual Info: MGA-66100 2-6 GHz Cascadable GaAs MMIC Amplifier Wtial HEWLETT W!XA PACKARD Features Chip Outline • Cascadable 50 £2 Gain Block • Broadband Performance: 2-6 GHz 12.5 dB Typical Gain ±1.0 dB Gain Flatness 13.0 dBm P1dB • Single Supply Bias • Unconditionally Stable

Contextual Info: f T C | HEW LETT PACKARD mLHM Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01170 Features • Cascadable 50 Q Gain Block • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: amplifier housed in a hermetic, high reliability package. It is designed for

AN-A005

Abstract: AVANTEK transistor
Contextual Info: INA-01100 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier What H EW LETT mL'EM PA C K A R D Features • • • • • Chip Outline1 Cascadable 50 £2 Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz High Gain: 32.5 dB typical at 100 MHz

Contextual Info: T L jm H EW LETT ft "EM PA CK ARD Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03170 Features • C ascadable 50 Q Gain B lock • Low N o ise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 1.5 GHz • 3 dB Bandwidth:

HP MMIC INA

Abstract: INA-02186 INA-02184 INA-02184-TR1 INA-02184-TR2 INA-02186-TR1 INA-02186-TR2 hp 314
Contextual Info: m H E W LE TT PACKARD INA-02184, INA-02186 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier 3 9 S - 5 -^ S S Package 84 Features 0.51 0.020 — *-j J— • Cascadable 50 £2 Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz

Contextual Info: Who 1 HEWLETT mL'HM INA-10386 Low Noise, Cascadable Silicon Bipolar MMIC Amplifier PACKARD Features • • • • • • 86 Plastic Package Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 1.8 GHz 26 dB typical Gain at 1.5 GHz 10 dBm typical P1dB at 1.5 GHz

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4002F V H F -U H F WIDE BAND AM PLIFIER W eight : 0.013g Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature * SYMBOL RATING

philips catv 860 amplifier ic

Abstract: D200-400 SEMICONDUCTO applications
Contextual Info: Philips Semiconducto H 7 1 1 0 fl5 b 0071A73 l| c 4 H IP H IN Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

TA4002F

Contextual Info: TO SHIBA TA4002F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4002F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band Width 1.3GHz Typ. (3dB down) • High Gain : |S2 il2= 23dB (Typ.) (f = 500MHz) • 500 Input and Output Impedance • Small Package

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D WkTM HEW LETT mHEM P A C K A R D 4 4 4 7 5 A 4 D D 1 0 D 1 3 3ET • H P A MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Chip Outline1 Features • • • • • ■ INA-01100 Cascadable 50 Q Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz

Contextual Info: 19-4797; Rev 0; 2/99 UAL IT MAN TION K A ET U E L H A EV TA S WS DA FOLLO 1 0 M H z t o 5 0 0 M H z V CO Buffe r Am plifie rs w it h Diffe re nt ia l Out put s The MAX2470/MAX2471 are flexible, low-cost, highreverse-isolation buffer amplifiers for applications with

Contextual Info: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V

HPVA-0180

Abstract: HPVA0180
Contextual Info: Wtipl mL'tLa H EW LETT P a c k a rd Silicon Bipolar M onolithic Variable Gain Amplifier Technical Data HPVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias • Single Ended or Differential Operation • Low Cost Plastic Surface

AN-A005

Contextual Info: Thal WÜtiMHEWLETT PACKARD IN A -0 2 1 0 0 MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Features Chip Outline1 • Cascadable 50 Q Gain Block • Low Noise Figure: 2.0 dB typical at 0.5 GHz • High Gain: 31.5 dB typical at 0.5 GHz 25.0 dB typical at 1.5 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

MAX2470

Abstract: MAX2470EUT-T MAX2471 MAX2471EUT-T 54 dbm sot23-6
Contextual Info: 19-4797; Rev 0; 2/99 UAL IT MAN TION K A ET U E L H A EV TA S WS DA FOLLO 10MHz to 500MHz VCO Buffer Amplifiers with Differential Outputs The MAX2470/MAX2471 are flexible, low-cost, highreverse-isolation buffer amplifiers for applications with discrete and module-based VCO designs. Both feature