lS21el2
Abstract: KSC2753
Contextual Info: KSC2753 KSC2753 Low Noise Amplifier for VHF/UHF • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor
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KSC2753
Contextual Info: KSC2753 KSC2753 Low Noise Amplifier for Vhf/uhf • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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2SC3774
Abstract: 2SC4404
Contextual Info: Ordering number : EN 2757 No.2757 ;_ 2 S C 4 4 0 4 NPN Epitaxial Planar Silicon Transistor S A N Y O ] UH F Local Oscillator, Wide-Band Amplifier Applications A pplications • UHF OSC, wide band amplifiers F eatu res • High cutoff frequency fr=5.0G H z typ
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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bft65d1279siemens 1414d1275+6germaniumgermanium drift transistordiode a811siemens halbleitergermanium transistorlegiert
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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bcj0003fbcj0003ejdv2s31ct1sv283b+81sv2712sk18752sk34761sv1281sv3071sv308dcs1800imt-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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bce0003e2sc5108toshiba transistors catalog2sk3476+7uhf/vhf ic transceiver2sk403microwave duplexeram tuning varicapwideband mmic vco covers 8 ghz to 12.5 ghz2sk3656microwave transceiver 3.54 ghz
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sot23 1303
Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers
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ma4t3243ot-23ma4t324335sot23 1303+4ic 3263npn bipolar junction transistors max hfe 20001272 hybrid1303 sot23
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3sk catalog
Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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bce0003ds-167bce0003esec 2sc5088+9samsung uhf/vhf tv tuner2sc5066 datasheetrf bipolar transistortransistor 2sc50662sc5088 secmt6l04aemt4s200tau82mt6l63fs
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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bce0003fmt4s300tta4032ftmt3s111tu+7japanese 2sc transistor 2010mt4s301tta4029ctctb7602ctcmt3s111pjapanese transistor 2sc 20102sk3476
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TRANSISTOR K 1507
Contextual Info: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel
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ic 2754
Abstract: 2SC4364 2SC4401 5P J TRANSISTOR MARKING Marking TRANSISTOR 777
Contextual Info: Ordering number:EN 2754 _ 2 S C 4 4 1 NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications Applications • VHF/UHF MIX70SC, low-voltage high-frequency amplifiers Features 3.0GHz typ V ce = 3V
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ic 27542sc43642sc44015p j transistor marking+1marking transistor 777
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EN2758
Abstract: 2SC3775 2SC4405
Contextual Info: Ordering number:EN 2758 No.2758 i 2SC4405 NPN Epitaxial Planar Silicon Transistor SAh YO i UHF, Low-Noise, W ide-Band A m plifier A pplications Applications •UHF, low-noise amplifiers, wide-band amplifiers Features fr=5.0GHz typ • High cutoff frequency
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TB2926
Abstract: tc94a92fg TC94A93MFG TC90105FG TB2915 TC90104FG tc94A96mfg TB9061FNG TC94A93 tb2929
Contextual Info: システムカタログ 2010-3 システムカタログ 車載ソリューション h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 情報・エンターテインメント Information & Entertainment クルマの未来を変える東芝の先進半導体テクノロジー
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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f1217ot-143ac 0624 transistor 17-33uc 1604+20166 415 04 1 060transistor cq 529
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2SA1669
Abstract: S121 transistor 2S D 716 marking BS
Contextual Info: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure
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7415 ic pin details
Abstract: C10535E NE52118 NE52118-T1
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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sma MARKING mp
Abstract: 2SC4365 2SC4402 EN2755
Contextual Info: Ordering number : EN 2755 2SC4402 N o.2755 NPN Epitaxial Planar Silicon Transistor sa m y o i VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications Applications • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers Features • Low-voltage operation
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2sc4402-appliedsma marking mp2sc43652sc4402+1en2755
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Contextual Info: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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a4p1250a4p1450ma4p4001a4p4002f+16a4p4006fa4p4301fa4p4302fa4p4306f7001fa4p7002fsot23 a4ptransistors 812jantx2n28577104fma4p275sma4cp104aods-1091ma4cp101bma4e2503lma4cs102b
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2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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2sc50652sc50852sc50902sc5095+15mt3s06umt3s07u2sc50662sc50862sc50912sc50962sk3075 equivalent10 ghz transistor2sk3078mt3s04tmt6p03aemt6p06e3sk32024lu1transistor 2sc5066
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