LRP PACKAGE Search Results

HRF22

Abstract: Hitachi DSA00358
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22

HRF32

Abstract: Hitachi DSA00358 Hitachi DSA0035
Contextual Info: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

lazer

Abstract: lazer diode
Contextual Info: HRF32-Silicon Schottky Barrier Diode for High Frequency Rectifying Features Outline • Good for high-frequency rectify for Vr =90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Ordering Information

Contextual Info: HRF22-Silicon Schottky Barrier Diode for High Frequency Rectifying Features Outline Good for high-frequency rectify for V r =40V, Io=l .OA, Output voltage=6Vmax. LRP structure ensures higher reliability. Cathode mark j^ark Ordering Information

HZF10

Abstract: HZF6.8 ADE-208-129B
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF22BP

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

F 82 bp

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features Outline • Wide spectrum from 1.88 V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r =40V, Io=1.0A, Output voltage=6Vmax. • LRP structure ensures higher reliability. Cathode mark

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 40V, IO = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information

ADE-208-129

Abstract: BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129 Z Preliminary Rev. 0 Aug. 1993 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 40V, I0 = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

HZF10

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

LRP PACKAGE

Abstract: CP4020 HZF Series
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 90V, I0 = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information

HZF16BP

Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

BP 34 datasheet

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Jul. 1997 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

LRP package PACKAGE

Abstract: lazer
Contextual Info: ADE-208-164C Z HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r=90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Cathode mark

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

CY7C1009

Abstract: 7C1009 A14C
Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance

1SS106

Abstract: 1SS119 1SS172 1SS108
Contextual Info: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©

1SS106

Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
Contextual Info: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1