LR401 Search Results

Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TRANSISTOR 1300

Abstract: LR401
Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TRANSISTOR 1300

Abstract: Polyfet LR401
Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LR401

Abstract: TB-160 FLR401 tb160
Contextual Info: TB-160 LR401 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=800ma 80 16.0 15.0 60 Pout P1dB=60W 14.0 40 13.0 Gain 20 Efficiency @60W= 50% 12.0 11.0 1 2 3 4 5 6 Pin in Watts TB-160 LR401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma 100 15.0 P1dB=60W 14.5 80 14.0 60 13.5

LR401

Abstract: LDMOS
Contextual Info: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB154

Abstract: Z4 diode diode C2 zener 18 5k pot 01UF 30PF LR401 zener 1.8 500Mhz diode
Contextual Info: Polyfet RF Devices TB-154 LR401 Pin vs Pout Freq=500Mhz; Vds=28Vdc, Idq=.8A 18 180 Linear @ 50 watts 160 17 140 Pout 120 16 100 15 80 Gain 60 14 40 Efficiency @130W = 60% 13 20 12 1 2 3 4 5 Pin in Watts Page 1 6 7 8 9 10 Gain in dB Pout in Watts P1dB = 100W

STK 407 - 040

Abstract: stk 407 070 LP 8029 m4 stk 407 090 LM 7804 STK 407 040 LM 7801 LP 8029 l2 9SMnPb28k makrolon 8030
Contextual Info: Miniatur-Abstandhalter Miniatur-Abstandhalter LPR 8000-Mini ff LPR 8001-70-Mini ff Miniature PCB Spacer r Selbstverriegelung wiederlösbar durch Zurückdrücken der Nase. Self-locking and releasable. r Montage: / Mounting: Bohrungen von 3,2 mm; max. 1,6 mm Materialstärke.

TB182

Abstract: amidon ATC100B UT43-10 LR401 ATC200B ATC-200B 125mu BN-61-2102 10NF
Contextual Info: T B - 1 8 2 L R 4 0 1 G a i n /E fficiency vs Freq; Vds=28Vdc Idq=1A 80 70 70 60 60 50 50 Efficiency Pout fixed at 100W 40 40 30 30 Gain 20 20 10 10 100 200 300 400 500 Freq in MHz T B - 1 8 2 P o u t /G a i n v s P i n F r e q = 1 0 0 M H z V d s = 2 8 V d c

LR40123

Abstract: 11 pin 24 AC relay TDD-120 relay timer 120 vac 24 volts adjustable power supply TDD-120-AKA-600 delay timer with relay 6 volts 8 pin relay 24 VDC Relay 11 pin relay timer
Contextual Info: 800.727.5646 atcdiversified.com TDD/TUD Series Diversified Electronics \\\ OPERATION Voltage is continuously applied to the input. An external isolated switch controls the timer. When closed, the relay energizes. Opening the switch initiates the delay period. Upon completion of the delay period, the relay

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

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Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
Contextual Info: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the