LPRF3 Search Results

lprf3

Contextual Info: SN54LVC86A, SN74LVC86A QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES _SCAS286F - JANUARY 1993 - REVISED JANUARY 1998 EPIC Enhanced-Performance Implanted CMOS Submicron Process SN54LVC86A . . . J OR W PACKAGE SN74LVC86A . . . D, DB, DGV, OR PW PACKAGE

ld25 cv

Contextual Info: SMJ320C40, TMP320C40 DIGITAL SIGNAL PROCESSORS SGUSG17C - OCTOBER 1993 - REVISED SEPTEMBER 1998 I I I I I • • • • SMJ: QML Processing to MIL-PRF-38535 SM: Standard Processing TMP: Commercial Level Processing TAB Operating Temperature Ranges: - M ilitary M -55°C to 125°C

qml-38535

Abstract: 5962-9759801QYA
Contextual Info: REVISIONS LTR DATE ÏR-MO-DAi DESCRIPTION APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING TH IS DRAW ING IS AVAILABLE FOR USE BY ALL DEPARTM ENTS A N D AGEN CIES OF TH E DEPARTM ENT OF DEFENSE 18 19 20 21

qml38535

Abstract: qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPRO VED A_ Added changes in accordance with NOR 5962-R159-97_ 96-12-20_Raymond Monnin B Change to Table I; lC C Dp , device type column. ksr Updated boilerplate. 98-02-18 Raymond Monnin

5962-9759902QXC

Abstract: qml-38535
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD M ICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 18 19 20 21 22 REV SHEET

a7 moe

Abstract: LOCTITE 307 TACHO SIGNAL SENSOR S 41 851 ETC 9668 RX DALI BASIC SO smd hall effect sensor bldc controller 1000W amplifier circuit diagram class D 1000w Oaz 236 diode optocoupler PC 187
Contextual Info: ST7MC1/ST7MC2 8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI • ■ ■ ■ ■ Memories – 8K to 60K dual voltage FLASH Program memory or ROM with read-out protection capability, In-Application Programming and In-Circuit

Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)

Contextual Info: HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM Features ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20125135155170ns max. - Industrial: 55ns (max.) - Commercial: 15/17120125135155ns (max.)

J8418

Abstract: 11R-A0 7024s
Contextual Info: HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM F eatures ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20/25/35/55/70ns max. - Industrial: 55ns (max.) - Commercial: 15/17120125135155ns (max.)

Contextual Info: SN54LV05A, SN74LV05A HEX INVERTERS WITH OPEN-DRAIN OUTPUTS SCLS391B - APRIL 1998 - REVISED JUNE 1998 EPIC"* Enhanced-Perfor mance Implanted CMOS Process SN54LV05A . . . J OR W PACKAGE SN74LV05A . . . D, DB, DGV, NS, OR PW PACKAGE (TOP VIEW) Typical V q l p (Output Ground Bounce)

1000w class d circuit diagram schematics

Abstract: jrc 072 cdm ,1000w class d circuit diagram schematics 1000w pure sine wave inverter diagram RC Oscillator circuit diagram for 1000W inverter push pull converter 1000W output JRC 0718 1000w class a circuit diagram schematics bldc controller 1000W amplifier circuit diagram class D 1000w
Contextual Info: ST7MC1/ST7MC2 8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI • ■ ■ ■ ■ Memories – 8K to 60K dual voltage FLASH Program memory or ROM with read-out protection capability, In-Application Programming and In-Circuit

ZC32

Abstract: ZP2 smd 1000w inverter smd transistor C3 cfw 3d SMD TRANSISTOR ETC 9668 RX TRANSISTOR SMD MARKING CODE zh asm 9435 JRc 1431 A amplifier circuit diagram class D 1000w
Contextual Info: ST7MC1/ST7MC2 8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, BRUSHLESS MOTOR CONTROL, FIVE TIMERS, SPI, LINSCI • ■ ■ ■ ■ Memories – 8K to 60K dual voltage FLASH Program memory or ROM with read-out protection capability, In-Application Programming and In-Circuit

3 PIN hall effect sensor n 177

Abstract: transistor Bc 313 NF 28 stmicrolectronics W413
Contextual Info: ST7MC1K2-Auto, ST7MC1K6-Auto ST7MC2S4-Auto, ST7MC2S6-Auto 8-bit MCU for automotive with nested interrupts, Flash, 10-bit ADC, brushless motor control, 5 timers, SPI, LINSCI Features • Memories – 8 to 32 Kbyte dual voltage Flash program memory or ROM with read-out protection

Contextual Info: SN54LV174A, SN74LV174A HEX D-TYPE FLIP-FLOPS WITH CLEAR SCLS401B - APRIL 1998 - REVISED JULY 1998 EPIC Enhanced-Performance Implanted CMOS Process Typical V q l p (Output Ground Bounce) < 0.8 V at V C c , Ta = 25°C SN54LV174A . . . J OR W PACKAGE SN74LV174A . . . D, DB, DGV, NS, OR PW PACKAGE

54ACS02

Abstract: qml-38535 J262
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PREPARED BY Larry T. Gauder PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

QML-38535

Abstract: 5962R9584502VYC XVHC MIL-PRF-38535A GDIP1-T28 5962H9584502VZC 5962R9584501 5962-95845 5962R9584501VZC 5962h9584502vxc
Contextual Info: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA Add case outline U Add note 2/ to sheet 2. Add note 5/ to table IA Add note 6/ to tyVHWL Make corrections to notes on sheets 11 and 13. Add note 3 to figure 3. Add note 2 to figure 5, Read Cycle. Add note 6 to figure 5, Write Cycle. Make correction to note 5 of figure 6

STmicroelectronics RF Switch SOI

Abstract: SMD MARKING CODES General Literature Hall Sensors 1 phase SCR TRIGGER PULSE TRANSFORMER ST7FMC1K4T6 ZP65 Pure sinewave inverter circuit diagram SEM 2005 16 PINS inverter ne555 missing pulse detector circuit transistor Marking STMicroelectronics 00V4
Contextual Info: ST7MC1/ST7MC2 8-bit MCU with nested interrupts, flash, 10-bit ADC, brushless motor control, five timers, SPI, LINSCI Features Memories – 8K to 60K dual voltage FLASH Program memory or ROM with read-out protection capability, In-Application Programming and In-Circuit

AP 309

Abstract: NE555 ZP2 smd bldc 4850 controller ic1 ne555 LQFP32 LQFP44 LQFP64 LQFP80 sensorless bldc blac motor
Contextual Info: ST7MC1xx/ST7MC2xx 8-bit MCU with nested interrupts, Flash, 10-bit ADC, brushless motor control, five timers, SPI, LINSCI Features Memories – 8K to 60K dual voltage FLASH Program memory or ROM with read-out protection capability, In-Application Programming and In-Circuit

bl12a

Abstract: 7025S
Contextual Info: HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM Features * * IDT7025 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access

Contextual Info: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM * Available in 128 pin Thin Quad Flatpack and 108 pin PGA packages * Industrial temperature range -40°C to +85°C is available for selected speeds Features * High-speed access - Military:25/35ns (max.)

jrc 072 cdm

Abstract: class d Sinus inverter circuit diagram schematics sensorless bldc blac motor LEMCO-0 LQFP32 LQFP44 SCT28 C 10NF 50V transistor 3Fn stmicrolectronics
Contextual Info: ST7MC1K2-Auto, ST7MC1K6-Auto ST7MC2S4-Auto, ST7MC2S6-Auto 8-bit MCU for automotive with nested interrupts, Flash, 10-bit ADC, brushless motor control, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 8 to 32 Kbyte dual voltage Flash program memory or ROM with read-out protection

5962-9752201QZC

Abstract: qml-38535 XC4005E-4PG156B 4005E XC4005E PHYSICAL
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET 35 36 37 38 39 40 41 42 43 15 16 17 18 19 20 21 22 23 REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

QML-38535

Abstract: 5962-9759702QXA
Contextual Info: REVISIONS LTR DATE DESCRIPTION APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 18 19 20 21 REV 8 SHEET

qml-38535

Abstract: CQCC1-N20 GDFP2-F20 54LVTH573
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Correct VCC and VIH values for ground bounce noise tests. - cfs 97-04-24 Monica L. Poelking Change the device name to reflect the Bus Hold feature, and adjust limits to characterize the performance of the optimized die. Editorial changes