LP1500 Search Results

LP1500

Abstract: MIL-HDBK-263 P100
Contextual Info: Filtronic LP1500 1 W Power PHEMT Solid State FEATURES DRAIN DRAIN • • • • • • +31.5 dBm Typical Power at 18 GHz 8 dB Typical Power Gain at 18 GHz +28 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 Ghz

LP1500

Abstract: MIL-HDBK-263 Filtronic LP1500P100 pHEMT transistor
Contextual Info: LP1500P100 PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

filtronic Solid State

Abstract: LP1500 LP1500SOT89 LP1500-SOT89-1 LP1500-SOT89-2 LP1500-SOT89-3
Contextual Info: Filtronic Solid State LP1500SOT89 LOW-NOISE, HIGH LINEARITY PACKAGED PHEMT FEATURES • • • • • • +28 dBm Typical Power at 1800 MHz 16 dB Typical Power Gain at 1800 MHz 1.2 dB Typical Noise Figure +44 dBm Typical Intercept Point 50% Power-Added-Efficiency

MIL-STD-1686

Abstract: LP1500 LP1500SOT223 P100 noise gate compression
Contextual Info: Filtronic LP1500SOT223 Low Noise, High Linearity Packaged PHEMT Solid State FEATURES • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range

filtronic Solid State

Abstract: LP1500 LP1500P100 LP1500-P100-1 LP1500-P100-2 LP1500-P100-3
Contextual Info: Filtronic LP1500P100 PACKAGED 1W POWER PHEMT Solid State FEATURES • +31 dBm Typical Power at 15 GHz • 12.5 dB Typical Power Gain at 15 GHz • Low Intermodulation Distortion • 50% Power-Added-Efficiency • Color-coded by IDSS range GATE SOURCE DRAIN

RO4003

Abstract: rogers LP1500SOT89 293D105X0035B2T LL1005-FH1N8S LL1005-FH27NK LL1005-FH3N3S LL1608-FH27NK 56348 RO-4003
Contextual Info: EB1500SOT89AA LP1500SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.8 dB Noise Figure 19 dBm Output Power 40 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB1500SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz, and it has a representative noise figure

LP1500

Abstract: LP1500SOT89 LP1500SOT89-1 LP1500SOT89-2 LP1500SOT89-3 MIL-HDBK-263 filtronic
Contextual Info: LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS

LP1500SOT89

Abstract: LP1500-SOT89-2 LP1500 LP1500SOT89-1 LP1500SOT89-2 LP1500SOT89-3 MIL-HDBK-263
Contextual Info: LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS

MIL-STD-1686

Abstract: AlGaAs resistivity LP1500 MIL-HDBK-263 P100
Contextual Info: LP1500 1W POWER PHEMT • • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD 2X

TA 8825 AN toshiba

Abstract: AG05 SMD smd H04 4b LCD hc 1613 W01 fet smd code W06 D2716 csc 8816 matching accelerator toshiba
Contextual Info: TENTATIVE TC6358TB TOSHIBA COMPANION CHIP FOR TX3922 TC6358TB PLUM2 USER’S MANUAL Rev. 4.2 Sep. 4, 2000 TC6358TB Sep. 4, 2000 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our

Contextual Info: Preliminary Data Sheet FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency

laf 0001 ic Substitution Data Book

Abstract: ssfdc TC6358TB TX3922 smd t04 66 smd code W06 TC59G1632AFB D2516 smd H04 4b M38813
Contextual Info: T O S H IB A TENTATIVE TC6358TB TOSHIBA COMPANION CHIP FOR TMPR3922U TC6358TB PLUM2 TECHNICAL DATA OCT/19/98 ( REV.3.2 ) 1 T O S H IB A TENTATIVE TC6358TB TABLE OF CONTENTS 1. General

HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION

LP1500

Abstract: LPV1500 MIL-HDBK-263 P100
Contextual Info: Filtronic LPV1500 1 W Power PHEMT Solid State FEATURES • • • • • • DRAIN DRAIN +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz