LOW-POWER GERMANIUM NPN Search Results

LOW-POWER GERMANIUM NPN Result Highlights (5)

Part	Manufacturer	Description	Download
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose	PDF
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN	PDF
MGN1D050603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-6/-3V GAN	PDF

LOW-POWER GERMANIUM NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nte102 Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3 Contextual Info: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:	Original	NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3	PDF
BFP650 Abstract: BGA420 T-25 Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology	Original	BFP650 OT343 BFP650 BGA420 T-25	PDF
RBS 3000 Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology	Original	BFP650 OT343 RBS 3000 BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON	PDF
RBS 3000 Abstract: 1g28 Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology	Original	BFP650 OT343 RBS 3000 1g28	PDF
germanium transistors NPN Abstract: BFP420F BFP650F GMA marking marking r5s Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology	Original	BFP650F BFP650may germanium transistors NPN BFP420F BFP650F GMA marking marking r5s	PDF
Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology	Original	BFP650F	PDF
nec 2501 Abstract: NESG240034 ic nec 2501 2501 nec Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.	Original	NESG240034 NESG240034 NESG240034-A M8E0904E nec 2501 ic nec 2501 2501 nec	PDF
nec 2501 Abstract: ic nec 2501 2501 NEC NESG220034 Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.	Original	NESG220034 NESG220034 NESG220034-A M8E0904E nec 2501 ic nec 2501 2501 NEC	PDF
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,	Original	NESG2101M16 NESG2101M16 PU10395EJ03V0DS	PDF
transistor T1J Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,	Original	NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING	PDF
NESG2101M16 Abstract: NESG2101M16-T3 NESG2101M16-T3-A Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A	PDF
NESG2101M16 Abstract: NESG2101M16-T3 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M16 NESG2101M16 NESG2101M16-T3	PDF
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M16 NESG2101M16 M8E0904E	PDF
Germanium power Abstract: BFR705L3RH TP5045 Contextual Info: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more	Original	BFR705L3RH Germanium power BFR705L3RH TP5045	PDF

transistor T1J Abstract: NESG2101M05-T1 NESG2101M05 Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05	PDF
transistor T1J Abstract: T1J marking Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M05 NESG2101M05 transistor T1J T1J marking	PDF
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification	Original	NESG2101M16 PU10395EJ01V0DS	PDF
transistor 1T Abstract: BFP650 equivalent Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Jul-01-2003 transistor 1T BFP650 equivalent	PDF
BFP650 noise figure Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650 Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 curr26 Mar-27-2003 BFP650 noise figure data sheet germanium diode germanium transistors NPN npn germanium BFP650	PDF
gummel Abstract: oscilators BFP650 Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Oct-13-2003 gummel oscilators BFP650	PDF
80mAF Abstract: 6069 marking Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking	PDF
2n1304 Abstract: Low-Power Germanium NPN Contextual Info: 2N1304 Ge NPN Lo-Pwr BJT 2.90 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1304 Online Store 2N1304 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	2N1304 2N1304 com/2n1304 Low-Power Germanium NPN	PDF
BFP650 Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Jan-08-2004 BFP650	PDF
PH marking code Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 PH marking code	PDF

LOW-POWER GERMANIUM NPN Search Results

LOW-POWER GERMANIUM NPN Result Highlights (5)

LOW-POWER GERMANIUM NPN Datasheets Context Search

nte102

BFP650

RBS 3000

RBS 3000

germanium transistors NPN

nec 2501

nec 2501

transistor T1J

NESG2101M16

NESG2101M16

Germanium power

transistor T1J

transistor T1J

transistor 1T

BFP650 noise figure

gummel

80mAF

2n1304

BFP650

PH marking code