LOW POWER 4K-BIT CMOS STATIC RAM Search Results

SD231

Contextual Info: VITELIC CORP 13E D | TSQ531Q °DD0471 Û | T - L\ k V VITELIC - Z 3 - P S V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

Contextual Info: VITELIC V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

Contextual Info: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly

Contextual Info: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly

Contextual Info: ISS 3 4K X 4-BIT CACHE-TAG CMOS STATIC RAM OCTOBER 1990 FEATURES DESCRIPTION • Very High Speed -1 2 ,1 5 , 20ns Max. • Fast output enable (tOE) for cache applications • CMOS Low Power Operation The ISSI IS61C180 is a high-speed, low power 4096 words by 4 bit static RAM. It is fabricated using ISSI's high

V61C68

Abstract: C-4555 4k*4bit
Contextual Info: V ITE LIC V61C68 FAMILY HIG H PERFORMANCE LOW POWER 4K x4B IT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

F03025

Contextual Info: ! i ISSI IS 61C70 4K X 4 HIGH SPEED CMOS STATIC RAM FEATURES DESCRIPTION • • The ISSI IS61C70 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design tech­

Contextual Info: ISSI IS 61C70 4K X 4 HIGH SPEED CMOS STATIC RAM FEATURES DESCRIPTION • • The ISSI IS61C70 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design tech­

DL05

Abstract: MDT11P0122 MDT11P0122LQ11 LCD05 R11EH
Contextual Info: MDT11P0122 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.

10 ohm ldr

Abstract: MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 sleep detector
Contextual Info: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.

100K20

Abstract: DL05 MDT11P0122 MDT11P0122LQ11 8 pin IC 4914 R11EH r11ah toy remote control circuit diagram
Contextual Info: MDT11P0122 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.

MDT10C65

Abstract: K993 RT 8284 N
Contextual Info: MDT10C65 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of ROM, and 192 bytes of static RAM.

MDT10P65

Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711
Contextual Info: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.

pin diagram of ic 741

Abstract: sleep detector DL05 MDT11P0121 R110H R107H R112H
Contextual Info: MDT11P0121 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.

DSC1121

Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

MDT10C65

Contextual Info: MDT10C65 1. General Description 3. Applications This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of ROM,

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

idt6168sa

Abstract: IDT6168 6168LA45
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

5962-86705

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

3090

Abstract: IDT6168 IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage