LOW NOISE TRANSISTOR BC Search Results

BCS49

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi

transistor tic 106

Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.

transistor marking 4c

Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistor BC859W; BC860W PIN CONFIGURATION FEATURES • S -m in i package. • Low noise DESCRIPTION PNP transistor in a plastic SOT323 package, prim arily intended for low noise stages in tape recorders, hi-fi

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

FPD6836P70

Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

BC307

Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).

bc307

Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N

72w transistor sot 23

Abstract: 72W SOT23 BC817 rohm
Contextual Info: ROHM CO L T » Tr ' 4QE D B 7&2W Ï 00032=11 b HRHM S S T Super Slim Transistor Types (S O T-23) Function Low Noise Amp Driver Low noise Amp Driver Low Noise Amp Mix Ose. TVTuner Type BC817-16 BC817-2S BC817-40 BC847A BC847B BC847C BC848A BC848B BC848C BC857A

Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1

bc237

Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K

Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1

Transistor BC 1078

Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Contextual Info: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

BC237

Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).

BCY79

Abstract: BCY59
Contextual Info: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. c

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

BCY79

Abstract: BCY59
Contextual Info: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. TO-18