LN59L Search Results

LN59

Abstract: LN59L LNA2702L
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 1.0 15.3±1.0 0.8 max. 0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C Forward current IF 50 mA Pulse forward current * IFP 1 A

Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-R1.25±0.1 1.0 2-0.8 max. M Di ain sc te on na tin nc ue e/ d 15.3±1.0 • Two-way directivity • High-power output, high-efficiency: PO = 1.8 mW (min.)

Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1% V 50 mA 1 A 75 mW −25 to +85 °C −40 to +100

Infrared Emitting Diode

Abstract: LN59 LN59L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • Two-way directivity • H igh-pow er output, high-efficiency : P Q = 1.8 mW (min.) • Small resin package

LN59

Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C Forward current IF 50 mA Pulse forward current * IFP 1 A Power dissipation PD 75

LN59

Abstract: LN59L LNA2702L photo sensor
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR (VHS System) 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

LN59L

Abstract: LN59 LNA2702L
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-0.5±0.1 0.5±0.1 2 1 2.54 C0.5 • Absolute Maximum Ratings Ta = 25°C mA Pulse forward current * IFP 1 A Power dissipation PD 75 mW Operating ambient temperature

Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L GaAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L 4.0±0.2 For light source of VCR (VHS System) 3.3 2-R1.25±0.1 1.0 0.8 max. M Di ain sc te on na tin nc ue e/ d 15.3±1.0 • Two-way directivity • High-power output, high-efficiency: PO = 1.8 mW (min.)

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

PR002-2

Abstract: mru2 PR0022
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

B029A

Abstract: UN039
Contextual Info: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005

Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2