LN3064 Search Results

Contextual Info: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Contextual Info: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

LM38510

Abstract: db3c 209 1N3064 L-M-38510 TROL 404 types wvf 222 - E
Contextual Info: MIL-M-38510/423A 9 August 1983 S U P E R S ED'I N T MIL-M-38510/423 USAF 8 F e b r u a r y 1980 IQ U A L I F I C A T I O N I IREQU I R E M E N T S I I R E M O VE D I MILITARY SYSTEM SPECIFICATION M I C R O CI RC UI TS , DIGITAL, SCH OT TK Y T T L , C O N T R O L L E R AND BU S D R I V E R , M O N O L I T H I C S I L I C O N

2N2270

Abstract: 4700 50v RCA-2N2270 2N2270 RCA transistor 2n2270 ln306 rca 2N2270
Contextual Info: High-Speed Power Transistors V 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications C CASE Features: • Minimum gain-bandwidth product = 700 MHz; useful in applications from dc to 20 MHz