LM38S Search Results

Contextual Info: jjl ra fl Sem iconductor p r e l im in a r y LM168/LM268/LM368 Precision Voltage Reference General Description Features The LM168/LM368 are precision, monolithic, temperatureccmpensated voltage references. The LM168 makes use of thn-film technology enhanced by the discrete laser trimmng of resistors to achieve excellent Temperature coeffi­

MIL-C-26655

Abstract: ADC1111 MIL-I-46058 MIL-S-23586 26655B
Contextual Info: A OBS OLE TE SVM. A DR. DESCRIPTION APPD. DATE INITIAL RELEASEPER E.R. NO. OBS -' CKD. OLE . TE REVSTATuslllllllllllll1 1 OF SHEETS 1112131"151617181911011111211311"1 UNLESS OTHERWISE SPECIFIED DRAWN 51 DATE DIMENSIONSARE IN INCHES TOLERANCES: DECIMALS: .XX !

LM365

Abstract: ADC0841CCN STB14NM50N ADC0841 ADC0841BCJ ADC0841BCN ADC0841BCV ADC0841BJ ADC0841CCJ ADC0841CCV
Contextual Info: ADC0841 National Ü2MSemiconductor ADC0841 8-Bit jaP Compatible A /D Converter General Description Features The ADC0841 is a CMOS 8-bit successive approximation A /D converter. Differential inputs provide low frequency in­ put common mode rejection and allow offsetting the analog

calibration procedure for 473 thermocouple

Abstract: LM28S D7445
Contextual Info: LM185-1.2/LM285-1.2/LM385-1.2 5ÔE J> b501124 0074H55 044 « N S C S NATL SEMICOND LINEAR National Semiconductor L M 1 8 5 -1 .2 /L M 2 8 5 - 1 .2 /L M 3 8 5 - 1.2 M ic r o p o w e r V o lta g e R e fe r e n c e D io d e General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower

lm38s

Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. Distinguishing Features No Video Amplifier Required ±1/4 LSB Typical DL Error

LM38SM-1

Abstract: LM385 lm38sm LM28S LM2851 lm385 N LM185 LM285 LM385-1 slma
Contextual Info: 445 - LM 185-1.2, L M 2 8 5 -1 .2, LM 385-1.2 F U *7 b , Í I Í ^ 2 1 .2 3 5 V ± l% !o r ± 2 % — 55— h 1 2 5 °C * 3tm J E 0 S& + 1 .2 v ) , L M 2 8 5 -1.2 ( i F ) T '. t 1* £ . - 4 0 ^ + 8 5 r íi L M 1 8 5 - 1 .2 30m A 10m A - 5 5 - + 125C (L M 1 8 5 -1 .2 )

ax 3003

Abstract: 1N3064 MIL-M-38510/115
Contextual Info: MI L - M- 3 8 5 1 0/ 4 4 8 28 February 1984 SUPERSEDING MÏ L - M- 38510/ 44A 24 May 1982 QUALIFICATION R EQUI REMENTS REMOVED_ MILITARY MICROCIRCUITS, INACTIVE D I G I T A L , T T L , LOW POWER, MONOLITHI C S I L I C O N COMPARATORS, FOR NEW DE S I GN AF TER DATE OF T H I S

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

55199

Abstract: lm 1766 LM38 LM series voltage regulators RETS185H calibration procedure for thermocouple 15CC DIODE 55199 semiconductor LM-38
Contextual Info: LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally

lm38510

Abstract: IC HE 4011 13005 2 ANI 1015 ha 13441 HC 4011 logic gate TT 46 N 16 LOF STD-183
Contextual Info: MIL-M-38510/5C 20 MAY 1985 SUPERSETS MI L-M-0038510/5BC19 1 December 1975 and MIL-M-38510/5A 6 December 1971 See 6.7) i MI L I T A R Y SPECIFICATION M I CR OC I R C U I T S , DIGITAL, AMD-OR-INVERT GATES, TTL, MONOLITHIC S I L I C O N T h i s s p e c i f i c a t i o n 1s a p p r o v e d f o r use by a l l D e p a r t ­

TFK U 111 B

Abstract: TFK diodes S10 ICF CP 1005 TFK 03 diodes rfox 23 tfk 101 5/16 -32 UNS 2A TFK diodes s10 120 saat tfk 545
Contextual Info: MIL-K—38510/79C 05 NOVEMBER 1987 w n r e n m r c -M IL -K -3 8 5 1 0 /7 9 B 28 F e b ru a r y 1984 M ILIT A R Y S P E C IF IC A T IO N M IC R O C IR C U ITS, O IG IT A L , B IP O LA R . SCHOTTKY T T L , DATA SELECTO RS/M U LTIPLEXERS WITH TH R EE-STA TE O UTPUTS, MONOLITHIC SILIC O N

55199

Abstract: 55199 semiconductor lm38s LM185 LM185-25 LM385-2 LM 2480 na
Contextual Info: Semiconductor LM185-2.5/LM285-2.5/LM385-2.5 Micropower Voltage Reference Diode General Description T h e LM 18 5 -2 .5 /L M 28 5 -2 .5 /L M 3 85 -2 .5 are m icropow er 2term inal band-gap voltage regulator diodes. Operating over a 20 ju.A to 20 m A current range, they feature exceptionally

j001 1003

Abstract: 13001 TRANSISTOR si 13001 j001 1003 led 13001 TRANSISTOR equivalent 13001 LZ transistor te 13001 marking 2U diode t5 tr 13001 darlington array 2804
Contextual Info: M I L - M - 385 1 0 / i 41 A 4 Mav 1988 WfRSEfilNi-M I L - M - 385 10/ 14 l 1 N o v e m b e r 1984 MILITARY SPECIFICATION MICROCIRCUITS, DARLINGTON T R A N S I S T O R A R R A Y , S E V E N AND E I G H T MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d

lm38s

Contextual Info: ” ielí -Om LM285/285B-1.2V LM285/285B-2.5V LM385/385B-1.2V LM385/385B-2.5V Semiconductor, Inc. LOW POWER, BANDGAP VOLTAGE REFERENCES GENERAL DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ Output Tolerance. 1% or 2%