LITEON PBPC Search Results

liteon PBPC

Contextual Info: PBPC601-PBPC607 Vishay Lite-On Power Semiconductor ▼ 6.0A Silicon Rectifier Features • Diffused junction • High current capability • Surge overload rating to 125A peak • High case dielectric strength of 1500V • Ideal fo r printed circuit board applications

Contextual Info: PBPC1001-PBPC1007 Vishay Lite-On Power Semiconductor 10A Bridge Rectifier Features • Diffused junction • High current capability • Surge overload rating to 150A peak • High case dielectric strength of 1500V • Ideal fo r printed circuit board applications

lta 301

Contextual Info: PBPC301-PBPC307 Vishay Lite-On Power Semiconductor ▼ 3.0A Bridge Rectifier Features • D iffu se d ju n c tio n • H igh c u rre n t c a p a b ility • S u rg e o v e rlo a d ra tin g to 5 0 A p e a k • H igh c a s e d ie le c tric s tre n g th o f 1 5 0 0 V

itt diodes

Abstract: DIODES Inc DO201 date code marking DIODES Inc DO201 marking itt diodes 8.2 liteon PBPC tube 1j5
Contextual Info: Product Packaging Information Surface M ount M in im um Packing Qty. Body Manuf. Logo Available Packaging Bulk Tube Qty. Tape & Reel 7 "0 13” 0 Qty. Qty. SOT23 SOT23 SOD123 MiniMELF MiniMELF ITT Diodes Inc. ITT ITT Diodes Inc. 3K 3K 3K 2.5K 2.5K 10K 10K

LTR-546AD

Abstract: D0-201AD liteon PBPC LTR546AD
Contextual Info: J LITE-ON INC l it e m : 31E » 553h3b7 0001664 2 Q L T N BLACK PLASTIC PHOTODIODE LTR-546AD FEATURES • • • • • HIGH PHOTO SENSITIVITY. SUITABLE FOR INFRARED RADIATIO N . LOW JUNCTION CAPACITANCE. HIGH CUT-OFF FREQUENCY. FAST SWITCHING TIME. DESCRIPTION

LTK829

Abstract: LTK849 357 Photocoupler E113898 D041a 20Forward
Contextual Info: L f T B S N High Density Mounting Type Photocoupler LTK829/LTK849 ^ 1 - 8 3 L_ r r i LITE-ON INC 31E D I SS3b3b7 QDG174b 1 • FEATURES 1. Symmetrical terminal configuration LTK829: 2-channel type LTK849: 4-channel type 2. High current transfer ratio CTR: MIN. 50% at lF= 5mA, VCE= 5V

lte5208a

Abstract: 0G01
Contextual Info: ÎL IT E -O N INC L 31E D ut SS3b3b7 GQDlflMS 3 B L T N GaAs T-1% STANDARD 5<f> INFRARED EMITTING DIODE L T E -5 2 0 8 A /5 2 0 8 A C FEATURES • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RAD IAN T INTENSITY RANGES. • LOW COST PLASTIC END LOOKING PACKAGE.

pbp 205 diode

Abstract: LTH-301-07 470 D 10 301-07
Contextual Info: LITE-ON INC 31E D SS3b3b7 GOaiATl T ILTN PLASTIC SIDE LOOK TRANSMISSIVE SWITCHES LTH-301-07 S FEATURES • NO N-CO NTACT SW ITCHING. • FOR D IR E C T PC BOARD OR SOCKET M O U N TIN G . • FAST SW ITCHING SPEED D U A L -IN -L IN E DESCRIPTION The LTH-301-07 consists of a Gallium Arsenide infrared

LTE-5208A

Abstract: LTR-3208 LTE5208
Contextual Info: ÎLITE-ON INC L 31E D ut SS3b3b7 QOD1Ô45 3 B L T N GaAs T-1% STANDARD 5q> INFRARED EMITTING DIODE LTE 5208A. 5208AC '>1 't '- M Î- 'Û FEATURES • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RAD IAN T INTENSITY RANGES. • LOW COST PLASTIC END LOOKING PACKAGE.

T4151

Abstract: LTR-536AD PFA 10Z D0-201AD
Contextual Info: ¡LITE-ON INC LIT! 31E 3> SS3b3b7 QO OIÛÛO S D L T N BLACK PLASTIC PHOTODIODE L3 J Í LTR-536AD T : l\ ^ s T FEATURES • • • • • HIG H PHOTO S E N S IT IV IT Y . S U IT A B L E FOR IN F R A R E D R A D IA T IO N . LOW JU N C TIO N C APAC ITAN C E .

D0201AD

Contextual Info: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .

LTH-301

Abstract: D0-201AD LTH-301A VR 5k pbp 205 diode K355
Contextual Info: u r m SS3b3b7 QQOiaflfl T 31E V ;LITE-ON INC ILTN PLASTIC SIDE LOOK TRANSMISSIVE SWITCHES t LTH-301A FEATURES • NO N-CO N TACT SW ITCHING . • FOR D IR E C T PC BO A R D SOCKET M O U N TIN G . • FAST SW ITCHING SPEED OR D U A L -IN -L IN E DESCRIPTION

LTR-3208E

Abstract: LTE-4208 T-41-45 D0-201AD LTR-3208 liteon PBPC T4145 RL- 3208 A
Contextual Info: LITE-ON INC 31E D 553b3b7 DQDiati3 S HLTN NPN T-lVd STANDARD 5<f> PHOTODETECTOR LTR-3208/3208E FEATURES • W IDE RAN G E OF CO LLECTO R • LENSED FOR HIG H S E N S IT IV IT Y • LOW COST P LA STIC PACKAGE. CURRENTS. DESCRIPTION The LTR-3208 series consist o f an NPN silicon

LTR-301

Abstract: D0-201AD LTE-302
Contextual Info: Ü . LITE-ON INC m 5S3b3b7 QD01ÔS7 T « L T N 31E D i GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE • S E L E C T E D TO S P E C IF IC O N -LIN E IN T E N S IT Y AND R A D IA N T IN T E N S IT Y R A N G ES . • LOW COST, P L A S T IC S ID E LO O KIN G P A C K A G E .

LTE2871

Abstract: D0-201AD LTE-2871
Contextual Info: ¡LITE-ON INC L r a ijj 31E D 5531^7 0ÜG1ÔS4 *4 ILTN GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .

liteon PBPC

Abstract: phototransistor 302
Contextual Info: :•JL.J 31E LITE-ON INC m i SS3b3b7 QDPlflS? T « L T N D mm ; • ,| C-\V-\\ Ì r. • S E L E C T E D TO S P E C IF IC O N -LIN E IN T E N S IT Y AND R A D IA N T IN T E N S IT Y R A N G ES . • LOW COST, P L A S T IC S ID E LO O KIN G P A C K A G E .

Contextual Info: ]LITE —ON INC LIT ¿I!BS £ 31E J> SS3b3b7 OGQ1ÔS1 =1 « L T N GaAs T -l STANDARD 30 INFRARED EMITTING DIODE LTE-4206/4206C • - , 'T - m - W FEATURES • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RAD IAN T INTENSITY RANGES. • LOW COST PLASTIC END LOOKING PACKAGE.

l0304

Abstract: x385 LTS-10304 LTS-10000
Contextual Info: |l i t e - o n 31E D inc 553b3b7 000E3ÔÔ b * L T N rt. 7 ^ 1 0 8 0 4 /1 0 3 0 4 Is’ 10805A/10305A W i ; i 1.0" SINGLE D IG IT NU M ER IC DISPLAYS ; ; FEATURES • 1.0 INCH 25.4m m D IG IT H EIG HT. • C O N TINUO US U N IF O R M SEGMENTS. • CHOICE OF TH R EE B R IG H T CO LORS-G REEN/

Contextual Info: r : E L IT E C ] fl M 4 8 2 1 c S E M E S 0.4" DUAL DIGIT NUMERIC DISPLAYS 31E T> ¡LITE-ON INC 553b3b? 0002400 3 ILTN FEATURES • 0.4 INCH 10.21 mm DIG IT HEIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF FOUR BRIGHT C O LO R S-RED/ BRIGHT RED/GREEN/ORANGE.

Contextual Info: PBPC801-PBPC807 Vishay Lite On Power Semiconductor ▼ 8.0A Bridge Rectifier Features • D iffu se d ju n c tio n • H igh c u rre n t c a p a b ility • S u rg e o v e rlo a d ra tin g to 1 2 5 A p e a k • H igh c a s e d ie le c tric s tre n g th o f 1 5 0 0 V

LTR-4206

Abstract: kbpc D0-201AD LTE-4206
Contextual Info: ]LITE —ON INC LIT ¿I!BS £ 31E J> SS3b3b7 OGQ1ÔS1 =1 « L T N GaAs T -l STANDARD 30 INFRARED EMITTING DIODE LTE-4206/4206C • - , 'T - m - W FEATURES • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RAD IAN T INTENSITY RANGES. • LOW COST PLASTIC END LOOKING PACKAGE.

LTS 542

Abstract: pin diagram of LTS 542 lts 542 pin diagram LTS 542 INTERNAL DIAGRAM LTS 542 common cathode "7 segment" LTS 542 312ah LT 542 common cathode LTS315AR lts 542 diagram
Contextual Info: {LITE-ON INC im 31E » • £53b3b7 QQQ233b *LTN: 0.3" SIN G L E DIGIT N U M E R IC D IS P L A Y S m j " T >cU -3 > FEATURES • 0.3 INCH 7.62m m D IG IT H EIG HT. • CHOICE OF SIX B R IG H T C O LO R S-R ED /B R IG H T RED / GREEN / Y E LLO W / O RANG E / HIG H E F F I­

LTP-2058A/2158A

Abstract: 2058A LTP2558AA LTP-2058A LTP-2058AHR LTP-2158A
Contextual Info: 1 I:.' I . ’ I" - '.: b 1 t t d \: . ! S IF T ÎT F S ' ! •i L T P “ 2 4 5 8 A A /2 5 5 8 A A rt - • L<tii * • L , 2 0 5 8 A /2 1 5 8 A 2.3" 5 x 8 SINGLE COLOR & MULTICOLOR DO T M ATR IX D I S P L A Y S / i i B i E i i Ä S i l S S Ä 31E D LITE-ON INC

LTP-305

Abstract: LTP-305G 1C00 305G LTP-305HR LTP-305R liteon bin codes
Contextual Info: I ¡LITE-ON INC 31E D LITEm LTP-305 SS3b3b7 S E R IE S - G 0 G 2 im T BLTN . -. g S 0.3” 5 x 7 S IN G LE COLOR DOT M A T R IX D ISPLA Y S FEA T U R ES • 0.3 INCH 7.62mm M ATRIX H EIG H T . • CHOICE OF T H R EE BR IG H T COLORS-RED/ GREEN/HIGH EF FIC IE N C Y RED.