0G01 Search Results

Contextual Info: EUPEC blE D • 3 40 32 e!? 0G011b3 5S1 H U P E C TT 60 F, TD 60 F, DT 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

KA 2261

Contextual Info: S-M 0 S SYSTEMS INC SbE D • 7^32^0^ 0G01b25 225 H S N O SED1681F 7 ^ r ^ - /J - o 7 CMOS LCD DRIVER • 80 LCD Segment Driver Outputs • Display Duty Cycles Ranging From 1/8 to 1/32 • Expansion Driver The SED1681 is a dot-matrix LCD segment driver for small, high-contrast display panels with duty cycles ranging

Contextual Info: 2bE D LOGIC DEVICES INC • SSbSTQS 0G0127S 3 ■ T -9 B -Û 7 12-bit Cascadable Multiplier-Accumulator MM • LMS12 DESCRIPTION The LMS12 is a high speed 12 x 12-bit of the dock in the 12-bit A and B input combinatorial multiplier integrated register, respectively. These registers

CI983

Abstract: 1S53 P33PCT374A P33PCT374B PCT374 1374B
Contextual Info: PERFORMANCE SEMICO NDUCTOR 20E & P33PCT374A/B OCTAL D FLIP-FLOPS WITH 3-STATE OUTPUTS Wt 70bSS*ì7 0G0127A 1 • ADVAMCE IMreSäMATOSM T ~ n - o ? - n xh FEATURES 3.3V + 0.2V Power Supply Center Power and Ground Pins 250 MHz Typical Toggle Rate Function, Speed and Drive Compatible with the

Contextual Info: INDUSTRIAL DEVICES I NC bôE D 474133B 0G01E40 SUPER BRITE 5X5mm SQUARE OUTLINE DIMENSIONS .20 ± .007 sq. 5.0 ±0.2 • Square surface for modern appearance • Bright, even illumination • Can be side-stacked • Tinted diffused lens / ALL DIMENSIONS ARE IN INCHES (MM).

Contextual Info: ÛUALITY SEMICONDUCTOR INC bSE J> • 74bfc.ñG3 0G013Ô3 bbD « Ú S I QS3251 Advanced Information High-Speed CMOS QuickSwitch 8:1 Mux / Demux Ô FEATURES/BENEFITS • • • • 5 0 switches connect inputs to outputs Pin compatible to the 74F251, 74FCT251, and

FF100R10KN

Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
Contextual Info: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45

Contextual Info: PUR] Y UH J)/ AND; A N » »IV LED Lamps 3flE D B 743275=] 0G01Ô33 T QAND STRIKING BRIGHT _ FEA TU R ES • • • • • • • Striking Bright High brightness for outdoor applications Low drive current Solid state reliability, long life

IC PRICE LIST

Abstract: QQQ1053 343AG
Contextual Info: F D K AMERICA INC 14E D • 343ÔGÔ4 0G0102E 2 THICK FILM HYBRID ICs T-MZ-S 1. Application 2. Circuit circuit diagram and materials & compo­ nents list), power consumption, frequency, and other specifications 3. Test conditions 4. Quality assurance conditions (for environmental

OPC929

Abstract: OPC925
Contextual Info: OPTEtC TECHNOLOGY INC 45E D Optek S t a n d a r d OPC925 • bTTfiiflO 0G0131Ü 717 Hi OTK P h otod iodes R = . 4 5 A /W 9 3 0 n m C = 1 0p F © 10V lQ = 3 0 n A © 1 0 V A = 0 .6 6 m m * ANO DE .0 3 2 0 .8 1 ACTIVE A R EA .0 4 0 (1 .0 2 ) ^ANODE i OPC910

ESJA57-04

Abstract: ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA86-24 ESJA88-06 ESJA88-08
Contextual Info: CÔLLMER SEM IC ONDUCTOR INC 25E D 52367TB 0G0133S 5 High Voltage Silicon Rectifiers & High Power Rectifier Assemblies Part Number VRRM lo KV (mA) ; VF (V) Trr (jusec) Pkg. L (in) Pkg. Dia. (in) Wire Dia. (in) .256 .256 .394 .394 .394 .472 .472 .472 .591

Contextual Info: SANKEN ELECTRIC CO LTD SSE D 2SG4467 • 7^0741 0G01G04 2fl4 H S A K ü Silicon NPN Triple Diffused Planar ☆Com plem ent to type 2 S A 1 6 9 4 Application Example : • Outline Drawing 2 . M T-100ÍT03P Audio and General Purpose Ta=25°C) Electrical Characteristics

VTT3323LA

Abstract: VTT3324LA VTT3325LA
Contextual Info: SbE D 3G3DbOT .025" NPN Phototransistors 0G01172 14T • VCT VTT3323LA , 4 LA, 5 LA Clear Long T-1 Plastic Package T-41-61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .2 2 < 5.6) .0 6 ( 1 .5 ) .0 2 3 (0 - 5 8 ) .0 1 7 (0 .4 5 ) ■1 6 0 ( 4 .0 6 ) .1 4 0 ( 3 .5 6 )

32S00

Abstract: JE 33
Contextual Info: 3M032R7 blE D EUPEC 0G01252 bfl? • l U P E C DD 105 N Elektrische Eigenschaften Electrical properties M axim um rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tv] = - 40',C . tv| m s* Stoßspitzenspannung non repetitive peak

0G015

Abstract: X2816BMB
Contextual Info: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa­ rameters are the same as those for normal operation.

1n5190

Contextual Info: SOLID STATE DEVICES INC 1BE D |ñ3bbDll 0G01fll3 7 | _ T - 0 1 - \ £ ' 1N5186 THRU SPD5192 3 AMP FAST RECOVERY RECTIFIER 1 0 0 -1 0 0 0 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396

pj 899 diode

Abstract: pj 899 2sk mosfet DD01 it900
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S

Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced

Contextual Info: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)

Contextual Info: l a tt ic e sem ico nducto r 4bE D • SBAfalMI G Q D m m h BILAT p L S r 1016 ü lL a ttic e programmable Large Scale Integration T -Ÿ é /' Ÿ Û ' wu.»ir.q r j ^ ■ ä ü ä a a iü ä Feature Ÿ a • PROGRAMMABLE HIGH DENSITY LOGIC —• Member of Lattice's pLSI Family

Contextual Info: PRELIMINARY DEVICE SPECIFICATION FIBRE CHANNEL INTERFACE CIRCUITS FEATURES • Functionally compliant with ANSI X3T9.3 Fibre Channel physical, transmission, and signaling protocol standards • Supports Fibre Channel data transmission rates of 1062.5, 531.25, and 265.625 Mbit/s

Contextual Info: STORAGE WES T ER N DI G I TA L CORP M IE D E3 =1710220 OQO'ïMSD 'T 5 E S kJDC -5 2 3 g WDIOCOIA Winchester Disk Controller 5JS WESTERN DIGITAL WD10C01A WESTERN D IG IT A L C0RP mE D B =1710220 000=1451 7 B H C TABLE OF CONTENTS T -S 2 - Section Title 1.0

Contextual Info: Rectifiers, General Purpose Continued to (AMPS) 60 80 150 250 @ Tc (°C) 150 150 150 150 IFSM(AMPS) 900 1500 3000 5000 f f II (o) CASE DO-5 4* D O -8 * VRRM (VOLTS) 4> DO-9 100 CR60-010 CR80-010 C R150-010 CR250-010 200 CR60-020 CR80-020 C R150-020 CR250-020