LINEAR TECHNOLOGY MARKING TYPE Search Results
LINEAR TECHNOLOGY MARKING TYPE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54L74/BCA |
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54L74 - Flip-Flop, D-Type, Dual - Dual marked (M38510/02105BCA) |
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| 5474/BCA |
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5474 - Flip-Flop, D-Type, Dual - Dual marked (M38510/00205BCA) |
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| 54175/BEA |
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54175 - Flip-Flop, D-Type, 4-Bit - Dual marked (M38510/01702BEA) |
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| 54F273/QSA |
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54F273 - Flip-Flop, D-Type, 8-Bit, Edge-Triggered, With Asynchronous Master Reset - Dual marked (5962-8855001SA) |
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| 54ACT825/QKA |
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54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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LINEAR TECHNOLOGY MARKING TYPE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Sim card diagram
Abstract: sim card chips subscriber identity module diagram iso7816 sim ISO7816 smart card jedec package MO-220 68 sim 80 pin Voltage Level Translators IMT-2000 ISO7816
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LTC4555 IMT-20LTC1986 900kHz, LTC3250-1 250mA LTC3251 500mA 16MHz, 4555fb Sim card diagram sim card chips subscriber identity module diagram iso7816 sim ISO7816 smart card jedec package MO-220 68 sim 80 pin Voltage Level Translators IMT-2000 ISO7816 | |
EIA-535-BAAC
Abstract: EIA-535 tantalum capacitors surge current tantalum capacitor surge current EIA-535BAAC Nemco
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QC300801/US0001, EIA-535-BAAC EIA-535 tantalum capacitors surge current tantalum capacitor surge current EIA-535BAAC Nemco | |
Vitrohm
Abstract: 0R015 KN350-0 KN352-010 C6550 KN353-010 vitrohm resistors 0R068 KK351-0 KN350-009
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KN350-8 KN351-8 KN352-8 KN353-8 KN354-8 0R003 0R051 0R004 0R068 0R005 Vitrohm 0R015 KN350-0 KN352-010 C6550 KN353-010 vitrohm resistors KK351-0 KN350-009 | |
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Contextual Info: CGY353 3-stage Power am plifier for 3.5 G Hz applications • linear Output power 31 dBm • Gain of 21 dB typ. • Operating voltage 7 V typ. • unconditionally stable ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking |
OCR Scan |
CGY353 QS9000 IS09001 | |
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Contextual Info: [CQ-330A] CQ-330A High-Speed Response Coreless Current Sensor 1. General Description CQ-330A is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra- thin film InAs Indium Arsenide is used as the Hall sensor, which |
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CQ-330A] CQ-330A CQ-330A VSOP-24 50/60Hz, 60sec) IEC/UL-60950 UL-508 014003800-E-01 | |
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Contextual Info: i VITROHM Series GF High Voltage / High Ohmic Resistors Metalglaze Film Technology Replace old Serie GH Specifications Type GF0207 GF0410 GF0512 GF0616 Style 0207 0410 0512 0616 0,25 0,5 1,0 3,0 Nominal Power rating P70 W Resistance range 68K … 68M |
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GF0207 GF0410 GF0512 GF0616 | |
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Contextual Info: SN74LVC2G74 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET SCES203J – APRIL 1999 – REVISED FEBRUARY 2003 D D D D D D D D D D D DCT OR DCU PACKAGE TOP VIEW Available in the Texas Instruments NanoStar and NanoFree Packages |
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SN74LVC2G74 SCES203J 24-mA 000-V A114-A) A115-A) | |
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Contextual Info: SAW Components SAW RF low loss filter Satellite CSS Series/type: Ordering code: B1626 B39182B1626U810 Date: Version: July 01, 2008 2.3 EPCOS AG 2008. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited. |
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B1626 B39182B1626U810 | |
SN74LVC2G74YEAR
Abstract: SN74LVC2G74YZAR A115-A C101 SN74LVC2G74
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SN74LVC2G74 SCES203J 24-mA 000-V A114-A) SN74LVC2G74YEAR SN74LVC2G74YZAR A115-A C101 SN74LVC2G74 | |
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Contextual Info: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf |
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QC300801/US0001, NMCOS012 | |
A115-A
Abstract: C101 SN74AUC1G80
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SN74AUC1G80 SCES388G 000-V A114-A) A115-A) A115-A C101 SN74AUC1G80 | |
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Contextual Info: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 May 12 Philips Semiconductors 2003 Jul 31 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear |
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LP2985A-XX LP2985A-XX | |
LP2985A-28DContextual Info: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 Jul 31 Philips Semiconductors 2003 Aug 18 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear |
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LP2985A-XX LP2985A-XX LP2985A-28D | |
LTC1844
Abstract: LTC1844ES5-BYP LTC1844ES5-SD
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LTC1844 150mA 100kHz) 110mV 300mV 340mV O-220 270mV LTC1844 LTC1844ES5-BYP LTC1844ES5-SD | |
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Contextual Info: AP3011 RFIC Technology Corporation 2.3~2.7GHz High Power Amplifier www.rfintc.com 2005.02.01 Preliminary AP3011 is a linear, three-stages power amplifier MMIC with super high output power in 2.3-2.7GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers |
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AP3011 AP3011 54Mbps IEEE802 26dBm 32dBm 50ohm | |
A115-A
Abstract: C101 SN74AUC1G79
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SN74AUC1G79 SCES387H 000-V A114-A) A115-A) A115-A C101 SN74AUC1G79 | |
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Contextual Info: SAW filters for infrastructure systems Series/Type: B3865 The following products presented in this data sheet are being withdrawn. Ordering Code B39241B3865H510 Substitute Product Date of Withdrawal 2012-01-13 Deadline Last Orders 2012-12-31 Last Shipments |
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B3865 B39241B3865H510 B3865 DCC12A | |
transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
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NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING | |
LVR-3
Abstract: lvr-5 J-STD-002 LVR-3-26 RLV30 vishay lvr-10
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MIL-PRF-49465 MIL-PRF-49465 RLV30 LVR-10) MIL-STD-202 2000Hz, J-STD-002 LVR-3 lvr-5 J-STD-002 LVR-3-26 RLV30 vishay lvr-10 | |
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Contextual Info: £ / T linTECHNOLOGY flA R _ am ] 2V, 30mA Flash M emory Programming Supply KOTUIKS DescRiPTion • Regulated 12V ±5% Output Voltage The LTC 1262 is a regulated 12V, 30mA output DC/DC converter. It is designed to provide the 12V ±5% output necessary to program byte-wide flash memories. The |
OCR Scan |
Progr62-2285 5G182 | |
t1p42
Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
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TC57-based FZT749 DS21437A TC57-2 t1p42 t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 TC57 | |
MTCH101
Abstract: DS30000A capaCITIVE proximity switch block diagram 8 hdg pwm Indium tin oxide index DS30000
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MTCH101 OT-23 OT-23 DS41664A-page MTCH101 DS30000A capaCITIVE proximity switch block diagram 8 hdg pwm Indium tin oxide index DS30000 | |
smd transistor E21
Abstract: 50CE100LX SMD diode MARKING e18 smd transistor marking e5 NRCP25J101TRF 50CE100 E5 sot223 06033C474KAT2A sd 431 transistor LTC4366
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DC1850A-A/DC1850A-B LTC4366HTS8-1/LTC4366HTS8-2 DC1850A 100VDC DC1850A-A DC1850A-B dc1850aabf smd transistor E21 50CE100LX SMD diode MARKING e18 smd transistor marking e5 NRCP25J101TRF 50CE100 E5 sot223 06033C474KAT2A sd 431 transistor LTC4366 | |
STK730FC
Abstract: KST-H014-000 STK730 AUK auk stk730
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STK730FC STK730 O-220F-3SL KST-H014-000 STK730FC KST-H014-000 STK730 AUK auk stk730 | |