LINEAR AMPLIFIER 2 MHZ 100W Search Results

RESISTOR CR25 philips

Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION

hp778d

Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

B3-28

Abstract: 2N6199 B25-28 Scans-00115709 B328
Contextual Info: 0182998 ACRIAN INC "t? de i D i a a ^ f l DDoiass 4 | T "D - 2 3 - tf CRIAN !BS9n!íiflKSBP/flii!8BS!BR !í B25-28 2N6199 GENERAL DESCRIPTION The B25-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operating in Class A,

100W POWER AMPLIFIER

Contextual Info: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :1MHz～1000MHz ■ Output Power :100W min. @1dB Comp. R&K-A001M102-5050R APPLICATION EMC(Electoromagnetic Compatibility) Accelerator Application Telecommunication Test and Measurement Application

Contextual Info: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency:9kHz～250MHz ■ Output Power :100W min. @1dB Comp. R&K-A009K251-5050R SPECIFICATIONS ＠＋25℃ OUTLINE DRAWING Frequency Range Small Signal Gain Gain Flatness Output Power

RCA transistor 40410

Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V

Contextual Info: Or, Call C ustom Service at 1-800-548-6132 USA Only B U R R -B R O W N - PGA103 PGA103 Programmable Gain AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMABLE GAINS: G=1, 10, 100WV The PGA103 is a programmable-gain amplifier for general purpose applications. Gains o f 1,10, or 100 are

12v class d amplifier 100W

Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

58nH

Abstract: 12v class d amplifier 100W
Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

12v class d amplifier 100W

Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

12v class d amplifier 100W

Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

ARF463A/rf power amplifier 100w

Contextual Info: ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G RF POWER MOSFETs TO-247 S N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been

40362

Abstract: 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

12v class d amplifier 100W

Abstract: UNELCO
Contextual Info: ARF463A G ARF463B(G) D G S *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

SM0810-51LD

Abstract: rf amplifier 100w
Contextual Info: Model SM0810-51LD 800-1000 MHz 120 Watt Power Amplifier The SM0810-51LD is an 800-1000 MHz* LDMOS amplifier primarily designed for ECM applications. The linear gain is 45 dB, and the unit operates over an extended temperature range of -30 to +85 ºC. Features

500w power amplifier circuit diagram

Abstract: 500w power rf linear amplifier circuit diagram LM351 op amp schematic rf Power supply 500w 1000w power amplifier circuit diagram 500w amplifier diagram LM351 data sheet LM351 pin diagram SCHEMATIC 1000w power amp amp linear digital 1000w rf
Contextual Info: CLC5523 Low-Power, Variable Gain Amplifier General Descriptions Features The CLC5523 is a low power, wideband, DC-coupled, voltagecontrolled gain amplifier. It provides a voltage-controlled gain block coupled with a current feedback output amplifier. High

Contextual Info: PRELIMINARY ML2751 Power Amplifier and LNA FEATURES GENERAL DESCRIPTION The 2751 is a 900 MHz ISM band radio front-end intended for use in half duplex radio applications such as cordless phones and FCC Part 15 compliant devices. It integrates a power amplifier PA , a Low Noise Amplifier (LNA), Pin

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

circuit diagram vga to video cable

Abstract: electron gun CRT horizontal and vertical deflection system of crt lm1391 la1881 vga to video circuit diagram crt monitor block diagram crt monitor circuit diagram vertical section of monitor vga monitor diagram
Contextual Info: National Semiconductor System Brief 114 June 1990 VGA SYSTEM DESCRIPTION The typical VGA Video Graphics Array monitor is composed of three key sections Video Timebase and Power The Video Section receives the signal from the monitor cable and amplifies it to a 50–60 VP-P grad running at 50 MHz

Contextual Info: HYBRID Tx COMBINERS AND COMBINING NETWORKS • Medium and High Power Hybrid Combiners • Multi-Way 8 to 16 Channel Microcell Power Combining Networks FEATURES • No tuning • Exceptional Reliabilty • Many User Options Filters, Power Monitors, Antenna Monitors

LT6230-10

Abstract: LT6202 LT6230 LT6231 LT6232 LT6231C/LT6231I
Contextual Info: LT6230/LT6230-10 LT6231/LT6232 215MHz, Rail-to-Rail Output, 1.1nV/√Hz, 3.5mA Op Amp Family Features Description Low Noise Voltage: 1.1nV/√Hz n Low Supply Current: 3.5mA/Amp Max n Low Offset Voltage: 350µV Max n Gain Bandwidth Product: LT6230: 215MHz; AV ≥ 1

A824

Abstract: VCA2612 VCA2613 VCA2615 VCA2617
Contextual Info: VCA824 VC A8 24 VC A824 www.ti.com. SBOS394C – NOVEMBER 2007 – REVISED DECEMBER 2008 Ultra-Wideband, > 40dB Gain Adjust Range, Linear in V/V