LIGHT EMITTING DIODES APPLICATIONS Search Results

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.

Q62902-B152-F222

Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

l943

Contextual Info: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs

gardasoft

Abstract: indium gallium arsenide phosphide UV-LED 680nm 475nm photocontrol 320nm power led 530nm PP500 Orange605nm
Contextual Info: Light Emitting Diodes - A Primer Russ Dahl, Opto Diode Corporation From the Web Exclusive, "Seeing the True Colors of LEDs." Light emitting diodes LEDs are semiconductors that convert electrical energy into light energy. The color of the emitted light depends on the semiconductor material

po102

Abstract: LN59 LNA2702L
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR VHS System 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)

gallium phosphide band structure

Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Contextual Info: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays

Contextual Info: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

S 205T

Contextual Info: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

Contextual Info: 62074 Fiber Optic GaAIAs Light Emitting Diode OPTOELECTRONIC PRODUCTS DIVISION FEATURES • • • High radiant output for fiber optic applications Electrically isolated from case High Speed DESCRIPTION The Light Emitting Diodes are designed to interface with

Contextual Info: HIGH RADIANCE LIGHT EMITTING DIODES ME1XX3 SERIES FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME1XX3 are AIGaAs double heterostructure light • Low operating current 50mA em itting diodes (LED) em itting light beams around 850nm wavelength.

Contextual Info: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 1. • Features 0. 15 1. 0± ° 2 1 φ5.75 max.

Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.9±0.31 (1.0) 11.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

SMD Transistor DN

Abstract: bcr402 BCR402R BCR402U BCR405U BCR401R SC74
Contextual Info: Applications Note No. 066 Silicon Discretes BCR402R: Light Emitting Diode LED Driver IC Provides Constant LED Current Independent of Supply Voltage Variation • Supplies stable bias current for Light Emitting Diodes (LEDs) • Low Voltage Drop of 0.75V maximizes system DC efficiency

LNA2601L

Contextual Info: Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Infrared light emission close to monochromatic light : λP = 950 nm

ic 2 bo 565

Abstract: SG206T
Contextual Info: NEC LIGHT EMITTING ELECTRON DEVICE DIODE SG206D,206T GaP LIGHT EMITTING DIODE - N E P O C S E R IE S - D ESC R IP T IO N The SG206D, SG 206T are GaP Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

PO103

Contextual Info: Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.5 3.9±0.3 1.2 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 • High-power output, high-efficiency: PO = 4.6 mW typ. • Emitted light spectrum suited for silicon photodetectors

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2W01L (LN57) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 4.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

LN671

Contextual Info: Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Unit : mm 5.3 max. 5.0±0.1 2.54±0.1 Light source for distance measuring systems 1.8±0.3 0.8±0.2 3 1.0±0.1 4 Features Small plastic package 4.3 max. 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3