LN172 Search Results
LN172 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LN172 | Panasonic | GaAlAs Infrared Light Emitting Diode | Original | 49.81KB | 3 | ||
| LN172 | Panasonic | GaAlAs Infrared Light Emitting Diode | Original | 36.24KB | 2 | ||
| LN172 | Unknown | The Optical Devices Data Book (Japanese) | Scan | 504.45KB | 21 | ||
| LN172 | Panasonic | Light Emitting Diodes | Scan | 78.67KB | 1 | ||
| LN172 | Panasonic | Light Emitting Diodes LED | Scan | 78.02KB | 1 |
LN172 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LN172
Abstract: 70nM
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ln17270nm | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.) |
OCR Scan |
ln172100ma | |
LN172Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : X P = 900 nm (typ.) |
OCR Scan |
ln172100ma100hz | |
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Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency : PO = 12 mW typ. 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 For optical control systems |
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ln172 | |
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.) |
OCR Scan |
ln172100ma | |
LN172
Abstract: Infrared Emitting Diode DSA003761
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Original |
ln172100hzinfrared emitting diodedsa003761 | |
LN172Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min. |
Original |
ln17210nductor | |
LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
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ln124wp5f02-1psf02-1ln155+10 | |
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
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1020gn12861n12b62mn1381+16 | |
LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
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ln143ln122wsmr02-1ln122wf+10 | |
LN9705
Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
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ln143ln122wsmr02-1ln122wf+9 | |
PR002-2
Abstract: mru2 PR0022
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plastic50p5002-1p5002-p5002-1n+7 | |
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
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mn101c01cmn101c01dmn101c025mn1020003+16 | |
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Contextual Info: UM1692 User manual EVAL6472H-DISC: fully integrated stepper motor driver based on the L6472 and STM32 Introduction The EVAL6472H-DISC can be used together with the STM32™ firmware library V1.0 and constitutes a complete motor control evaluation and a development platform. |
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um1692eval6472h-discl6472stm32+3 | |
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Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2 |
OCR Scan |
ln143ln122wsln122wfln124w+5 | |