LH534 Search Results

mrom

Abstract: 32-PIN 32TSOP LH534A00 LH534A00T TSOP032-P-0820 IA111
Contextual Info: LH534A00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 357.5 mW (MAX.)

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

LH534K00D-15

Contextual Info: CM OS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534K00 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

dl321

Contextual Info: LH534600 FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM DESCRIPTION 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Low-power consumption:

ICE ICC3

Abstract: LH534100B sharp mask rom LH534100BD
Contextual Info: CMOS 4M 512K x 8 Mask-Program m able ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534100B is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)

ice power 200 asc

Abstract: ICE ICC3 4c27a
Contextual Info: C M O S 4M 512K x 8 Mask Programm able ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534100B is a 4M-bit mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)

LH534B00

Abstract: LH534B00T TSOP040-P-1020
Contextual Info: LH534B00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs

48-PIN

Abstract: LH534
Contextual Info: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) • Access times: 500 ns (2.6 V ≤ VCC < 4.5 V) 200 ns (4.5 V ≤ VCC ≤ 5.5 V) • Wide range power supply: 2.6 to 5.5 V • Static operation

48-PIN

Abstract: d1220
Contextual Info: LH534600B FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) CMOS 4M (512K × 8/256K × 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW A17 1 40 A8 A7 2 39 A9 • BYTE input pin selects bit configuration

sop03

Abstract: 32DIP 32-PIN LH534700D LH534700 DIP032-P-0600
Contextual Info: LH534700 CMOS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 words × 8 bit organization The LH534700 is a 4M-bit mask-programmable ROM organized as 524,288 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.)

Contextual Info: LH534000B-S CMOS 4M 512K x 8/256K x 16 3V-Drive MROM PIN CONNECTIONS FEATURES • 524,288 words x 8 bit organization x 16 bit organization 40-PIN DIP 40-PIN SOP (Byte mode) 262,144 words TOP VIEW r A17 C (Word mode) • Access times: 500 ns (2.6 V < Vcc < 4.5 V)

Contextual Info: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES • 524,288 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: DESCRIPTION The LH534400A is a mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: LH534P00 FEATURES CMOS 4M 512K x 8/256K x 16 Mask-Program m able ROM PIN CONNECTIONS • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) 40-PIN DIP TOP VIEW - . / 1• 40 U Ag

ICE ICC3

Contextual Info: C M O S 4M 512K x 8 M ask-Program m able ROM FEATURES DESCRIPTION • 5 2 4 ,2 8 8 x 8 bit organization The LH534100B is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (M AX.)

Contextual Info: LH534A00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words x 8 bit organization TOP VIEW 32-PIN TSOP (Type I) r • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 357.5 mW (MAX.)

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH534700 is a4 M -b it mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.)

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization 40-PIN TSOP (Type I) TOP VIEW • Access time: 120 ns (MAX.) f a 14 □ • Single +5 V power supply • Package: 40-pin, 10 x 20 mm2 TSOP (Type I) DESCRIPTION The LH534B00 is a 4M-bit mask-programmable ROM

Contextual Info: SHARP CORP biE ]> LH534P00 • aiao?« ooGiaao ost « s r p j CM O S 4M 512K x 8 / 256K x 16 Mask-Programmable ROM PIN CONNECTIONS FEATURES • • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) 40-PIN DIP TOP VIEW

Contextual Info: LH534P00A CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 (iW (MAX.)

Contextual Info: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM LH534600 FEATURES • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • • BYTE input pin selects bit configuration DESCRIPTION The LH534600 is a 4M bit mask-programmable ROM

sharp mask rom 44-pin

Abstract: sharp mask rom AE-C17
Contextual Info: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)

Contextual Info: PRELIMINARY LH534000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Program m able ROM PIN CONNECTIONS TOP VIEW 40-PIN DIP 40-PIN SOP