LG DS 325 Search Results

lg ds 325

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT1001R6BN 1000V 8.0A 1.600 APT901R6BN 900V 8.0A 1.60H O s 3 * WER MOS r N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: RFP15N08L Semiconductor D ata S h eet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET • 15A, 80V RFP15N08L • Design Optimized for 5 Volt Gate Drive • Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits • SOA is Power Dissipation Limited

APT1002R4BN

Contextual Info: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

TH 201

Abstract: APT12080LVR
Contextual Info: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

RFP15N06L

Contextual Info: RFP15N05L, RFP15N06L Semiconductor April 1999 Data Sheet 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

2n5566

Abstract: 2N5564 2N5565 2sc 5198 equivalent
Contextual Info: 2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S M i n (V) gfs Min (mS) lG TVp(pA) |VGsi “ V q s 2 ( Max (mV) 2N5564 -0 .5 to - 3 -4 0 7.5 -3 5 2N5565 -0 .5 to - 3 -4 0 7.5 -3 10 2N5566

Contextual Info: APT30M19J VR A dvanced W 7Æ P o w e r Te c h n o l o g y 300v 130a 0.0190 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

sml1002rAN

Abstract: 1002RAN sml1002r4an
Contextual Info: SEM ELAB _ m bOE D PLC 3133107 G0G0734 i _ TTT • S M L ß MOS POWER SEME SML1002RAN SML902RAN LAB 4 1000V 6.0A 2.0012 900V 6.0A 2.00Q SML1002R4AN 1000V 5.5A 2.40Q SML902R4AN 900V 5.5A 2.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

APT1001R6BN

Contextual Info: A d van ced Q D ro w er Te c h n o l o g y O S APT1001R6BN 1000V APT901R6BN 900V 8.0A 1.6012 8.0A 1.6012 POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

c 503 K

Abstract: lg ds 325
Contextual Info: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

902R4BN

Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Contextual Info: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

Contextual Info: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter

f12n10L

Abstract: f12n10
Contextual Info: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use

lg ds 325

Contextual Info: A dvanced P o w er T e c h n o lo g y APT20M45BVR 200V s6a o.o45ß POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

BF982

Abstract: Transistor BF982
Contextual Info: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back

G331

Abstract: pj 86 diode irff120 g-331 G 331 G333
Contextual Info: 11Ê D I MÖ55MS2 GGÜIBSH b | Data Sheet No. PD-9.342F INTERNATIONAL RECTIFIER I«R INTERNATIONAL RECTIFIER HEXFETTRANSISTORSIRFF120 IRFF12*! IM-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF1SS 4 1 IRFF123 Features: 100 Volt, 0.30 Ohm HEXFET T h e H E X F E T ® technology is the key to International

2N4341

Contextual Info: s n-channel JFETs 2N4338 2N4339 2N4340 designed for Siliconix . Performance Curves NP See Section 5 • Small-Signal Amplifiers B E N E F IT S • Low Noise N F < 1 dB at 1 k H z ■ Choppers • Operation from Low Power Supply Voltages ■ Voltage-Controlled Resistors

2sk1150

Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .

Contextual Info: ADVANCED P o w er Te c h n o l o g y ' APT30M19JVR 300V 130A 0.019Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: IRFW/I540A A dvanced Power MOSEET FEATURES BV DSS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 28 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­