LF TRANSISTOR Search Results

smd transistor A7p

Abstract: smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
Contextual Info: LF Driver ATA5279 with Channel Extension Using NMOS Antenna Multiplexer 1. Description Several automotive Passive Entry applications require more than the six LF antennas usually supported by the ATA5279 LF driver. Figure 1-1 on page 2 shows how to expand the device to drive a greater number 9 of LF antennas. In this proposal, an

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA

280s2

Abstract: tl package
Contextual Info: Emitter / Sensor Pairs Infrared Emitters Raft. rwmm . Radiant Flu* Feature* I B M IS654A . JàattM l Current - ' 3mm Dia. Tl Package 1.5 lF=40mA IS658A Side Emitting 0.7(lF=20mA) IS656A Side Emitting Compatible with Isocom Schmitt Trigger Detectors 0.75(lF=20mA

HOA-1873

Abstract: 187313 1873 TRANSISTOR ST DARLINGTON TRANSISTOR honeywell hoa transistor ac 050 HOA 1873-12
Contextual Info: HOA 1873 — Transmissive Switch i7 *-'* * Com­ ponents Characteristics Sensor aperture Test condition On-«taie collector current Off-state collector current Saturation voltage LED forward voltage VCE - 5 V lF as shown VCE - 10 V lF - 0 lc and lF as shown

smd code A4p

Abstract: RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X ATA5279 smd diode code A4N
Contextual Info: LF Wake-up Demonstrator ATAK5279-82 Using Six-fold Antenna Driver ATA5279 1. General Description The demonstrator is intended to show LF wake-up functionality using the new six-fold LF antenna driver ATA5279 and the 3D receiver ATA5282. The demonstrator may

Contextual Info: SIEMENS MCT5210 MCT5211 AIGaAs LED/ PHOTOTRANSISTOR OPTOCOUPLÈR FEATURES * Current Transfer Ratio MCT5210, >70% at lF = 3.0 mA • MCT5211, >110% at lF = 1.0 mA • Saturation C TR -M C T5211, >100% at lF = 1.6 mA * High Isolation Voltage, 5300 VDC * Underwriters Lab Flle #E52744

J348

Contextual Info: MCT5210 MCT5211 SIEMENS AIGaAs LED/ Phototransistor Optocoupler FEATURES • Current Transfer Ratio MCT5210, >70% at lF=3.0 mA MCT5211, >110% at lF=1.0 mA • Saturation C TR -M C T 5211, >100% at lF=1.6 mA • High Isolation Voltage, 5300 VACRMS • Underwriters Lab File #E52744

4894B

Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
Contextual Info: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring

TO3001

Abstract: 11 opto 4pin TCDT1120 TCET1102 C4160
Contextual Info: VISHAY Vishay Telefunken ▼ Opto Isolators for Power Supplies S 5 « FIMKO 0884 Characteristics Dim. Fig- Package Part Number CTR Vio V CEO lF and lC V CEsat lF=10 mA Rl= 100Q % V|QTM ton/toff @ lF mA mA us | mA - No Base Connection and CTR Ranking SC' C

Contextual Info: Photo Darlington High Sensitivity, without Base connection Part 1mA Vce«»/ - m H24B1 1Q0Q lF=5ntA 3 H24B2 400(F=5m A)3 H24B3 750 (lF=5mA) 3 ISPD60 100 ISPD61 500 ISPD62 ISPD63 ISPD64 ISPD65 MOC8020 Photo Darlington Transistor Detector Base Lead Not Connected

samsung 2GB Nand flash 121 pins

Abstract: SLC NAND endurance 100k
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

KFG1216x2A-xxB5

Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial

Flash Memory datasheet mmc

Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

Contextual Info: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6

samsung "nor flash" sensing

Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2

SAMSUNG 256Mb NAND Flash Qualification Report

Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability samsung toggle mode NAND Samsung Electronics. NAND flash memory BLOCK NAND Flash Qualification Reliability samsung dual lcd 63FBGA KFG5616D1M-DEB KFG5616Q1M
Contextual Info: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)

tsop1748

Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
Contextual Info: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

1E49Ah

Abstract: Samsung nand MLC
Contextual Info: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5

Contextual Info: 2DI30M -050 3 oa ! Outline Drawings POWER TRANSISTOR MODULE • W A : Features • f t h FE High DC Current Gain • High Speed Sw itching : A p p lica tio n s > /< —£ • General Purpose Inverter U ninterruptible Power Supply • N C lf ^ f lf tt#

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

SLC NAND endurance 100k years

Abstract: 802AH
Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

Samsung oneNand Mux

Abstract: onenand KFG1216Q2M-DEB oneNand flash 63FBGA KFG1216D2M-DEB KFG1216U2M KFG1216U2M-DIB KFH1G16Q2M-DEB 8049H
Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. VCC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial

8017h

Abstract: 804aH Datasheet ONENAND KFG1216D2M-DCB KFG1216D2M-DEB KFG1216Q2M-DCB KFG1216Q2M-DEB KFG1216U2M-DIB KFH1G16D2M-DEB KFH1G16Q2M-DEB
Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DCB 1.8V(1.7V~1.95V) Commercial 63FBGA(LF) KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DCB 2.65V(2.4V~ 2.9V) Commercial