8049H Search Results

processor 8049h

Abstract: intel 8049H 8039HL 8049H Intel 8749 h INTEL 8049 PC INTEL 8049 IPC processor 8049 Intel 8749 SOSO
Contextual Info: in t p l ¡Piim DM iM W ^ 8049H/8039HL HMOS SINGLE COMPONENT 8-BIT MICROCOMPUTER • 8049H Mask Programmable ROM ■ 8039HL CPU Only with Power Down Mode ■ 8-BIT CPU, ROM, RAM, I/O in Single Package High Performance HMOS ■ 1K x 8 ROM 64 x 8 RAM 27 I/O Lines

IC 8085 pin diagram

Abstract: 8749H INTEL 8049 IC intel 8749h intel 8085 instruction set 8049H ic intel 8085 8085 pin diagram Intel 8080 instruction set 8749
Contextual Info: •Del 18749 NEW HIGH PERFORMANCE SINGLE COMPONENT 8-BIT MICROCOMPUTER INDUSTRIAL • • • • • EPROM Version of 8049H Use for Prototype Development 11 MHz Operational High Performance HMOS Interchangeable with 8049 2 K x 8 ROM/EPROM 128 x 8 RAM 27 I/O Lines

8049H

Abstract: TPCA8049-H
Contextual Info: TPCA8049-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅥ-H TPCA8049-H ○ スイッチングレギュレータ用 ○ モータドライブ ○ DC-DC コンバータ用 4 : QSW = 13 nC (標準) • オン抵抗が低い。 : RDS (ON) = 6.6 mΩ (標準)

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

IN329

Contextual Info: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

022AH

Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

Contextual Info: TPCA8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOS -H TPCA8049-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 13 nC (typ.)

Contextual Info: 19-3439; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6872/MAX6873 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and four general-purpose logic

63FBGA

Abstract: KFN4G16Q2A
Contextual Info: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) Preliminary FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TCA 785 application note

Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx

KFM1G16Q2B

Abstract: ADQ - 32W 0234H 63FBGA KFM1G16Q2
Contextual Info: MuxOneNAND1Gb KFM1G16Q2B-DEBx FLASH MEMORY KFM1G16Q2B 1Gb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TPCA8049

Abstract: TPCA8049-H
Contextual Info: TPCA8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8049-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 13 nC (typ.)

63FBGA

Abstract: kfg1g16q2c
Contextual Info: OneNAND1Gb KFG1G16Q2C-xEBx FLASH MEMORY KFG1G16Q2C 1Gb OneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

63FBGA

Abstract: KFG1216U2B 67-ball samsung "NOR Flash" 512MB
Contextual Info: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,