LEM LP TP Search Results

Contextual Info: Current Transducer LAS 50-TP/SP1 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT Primary nominal r.m.s. current

Contextual Info: TAIWAN LITON ELECTRONIC 0035^15 D003DT1 TT7 • TLIT General Purpose Type Photoeoupler l i t e w HTE T> : U FEATURES 1. H iah speed response tPHL, t PLH 6N 135: M A X , 1.5 ms at R L = 4.1kO 2. High instantaneous com m on m ode rejection voltage (C M h : T Y P . 1 kV//ts)

Contextual Info: PGR 201 06 Optical Receiver Submodule for 2.5 Gbps i FIBER - ► ! DATA 1 i ¥ > 1 1 APD •- 1p r e a m U Features • H e rm e tic , 14 p in b u tte rfly package w ith m u ltiso u rce d fo o tp rin t • S ing le-m o d e fiber p ig ta il

Contextual Info: Tem ic AN702 S e m i c o n d u c t o r s Efficient ISDN Power Converters Using the SÌ9100 James Blanc O ne o f the latest technology revolutions, an integrated worldwide telecommunications network, will be accompanied by another advance in pow er conversion

T1P29

Abstract: TIP30 TIP3 TIP30B 82S2
Contextual Info: TIP30; A TIP30B; C philips international 5bE D mt 7 1 1 0 f l E b OCm34fciO 5T S M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS 7- 33 - P N P s ilic o n transistors in a pla stic envelope intended fo r use in o u tp u t stages o f au d io and television

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

intel 8212

Abstract: D 8212 intel
Contextual Info: 412 54F/74F412 Multi-Mode Buffered Latch With 3-State Outputs Connection Diagrams '’ Si E Description M The ’ F412 is an 8 -bit latch w ith 3-state o u tp u t buffers. A lso included is a status flip -flo p fo r providing device-busy o r request-interrupt com m ands.

Contextual Info: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )

Contextual Info: Ju ly 1992 P R E L IM IN A R Y % M i c r o Linear ML4642 AU I Multiplexer GENERAL DESCRIPTION Th e M L4 6 4 2 A U I M u ltip le xe r co n tain s all the necessary d rivers/receivers and control logic to im p lem ent a 2 port M A U w h en used in co n ju ctio n w ith a tran sce ive r ch ip

2SJ201

Abstract: 2SK1530
Contextual Info: TO S H IB A 2SJ201 TO SH IBA FIELD EFFECT TRANSISTOR SILICON P C H A N N EL M O S TYPE 2SJ201 HIGH PO W ER AM PLIFIER APPLICATION U n it in mm 2 0 .5 M A X . • H ig h Bre a k d o w n V o ltag e • H ig h F o rw a rd T ran sfer A d m ittan ce : |Yfs|= 5 .0 S Typ.

irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Contextual Info: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631

GQ102

Contextual Info: A xial Leaded Capacitors M etallized Polyester D ielectric Tape W rapped with Epoxy Endfill Type AREM, AFEO lnsu4stiort R e sista n ce Category <100VDC >100VDC 1,000 5,000 M egOhms x M egOhms Maximum Need Not Exceed 10,000 30,000 Test Voltage 50VDC 100VDC

Contextual Info: CXA1208R/Q SONY, 8mm VCR Color Signal Processing Description T h e CXA1208R/Q is a consumer IC developed for 8mm VCR color signal processing. Usage in combination with CX A1207A allows tor the processing of Y/C main signals. Features • Single 5V power supply

Contextual Info: PRELIMINARY M IC R O N 128K SRAM MODULE X M T4LS12832 32 SRAM M ODULE 128Kx 32 SRAM LOW VOLTAGE • H ig h sp eed : 20*, 25 an d 35n s • H ig h -d en sity 5 1 2 K B d esig n • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p rocess

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

Contextual Info: PowerPC ' TM P relim inary D ata PowerPC 603e RISC Microprocessor 150,160,166,180,200MHz Product Description Highlight s The PowerPC 603e m icro p ro ce sso r is a Pow er M a n a g e m e n t Uni t • Static lo w -po w e r design • D ynam ic pow er m a n ag em en t

Contextual Info: U N Doc #; 385 1.2 & 2 .5 V M T h e I n f i n i t e P o w e r I o f n n o v a t i o n P icro po w er D r o d u c t i o n DESCRIPTION T he LM 385/385B M ic ro p o w e r V oltage R eferen ces a re tw o te rm in a l b a n d g a p referen ce d io d es d e sig n e d a n d op tim ized

Contextual Info: \ NOV 1 3 1990' AT&T Advance Data Sheet T7351 FDDI Physical Layer Device F eatures • Monolithic FDDI Physical Layer PHY solution ■ ■ Low-power (< 800 mW) CMOS design using single 5 V power supply Byte-wide PHY-MAC (media access control) interface ■

uaf41

Abstract: ic UAF42 F42A DJ2H application bulletin ab-035
Contextual Info: UAF42 UNIVERSAL ACTIVE FILTER APPLICATIONS FEATURES TEST EQUIPMENT • VERSATILE— LOW-PASS, HIGH-PASS BAND-PASS, BAND-REJECT COMMUNICATIONS EQUIPMENT MEDICAL INSTRUMENTATION • SIMPLE DESIGN PROCEDURE DATA ACQUISITION SYSTEMS • ACCURATE FREQUENCY AND Q —

Contextual Info: F-212 Most older products not shown in this catalog are still available. Call Samtec or see www.samtec.com/xxxx for availability and specifications. Substitute series callout for xxxx INDEX BY SERIES New product highlighted in bold. Series Description Page

Contextual Info: PRELIMINARY I^ IIC R O N 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K x 32 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • H ig h speed: 20*, 25 and 35ns • H ig h -d en sity 1M B d esign • H ig h -p erfo rm a n ce, lo w -p o w er, C M O S d o u b le-m etal

Contextual Info: MICRON 32K SRAM MT5C2568 X 8 SRAM 32Kx 8 SRAM • H ig h sp eed : 1 0 ,1 2 ,1 5 , 20, 25 a n d 35n s PIN ASSIGNMENT Top View • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • S in g le + 5 V ± 1 0 % p o w er su p p ly

8bm11

Abstract: 8bm11 tube ge company ge tube company general electric E12-70 K55E
Contextual Info: 8BM11 ELECTRONICS 8BM11 Tj COMPACTRON DISSIMILAR DOUBLE PENTODE — DESCRIPTION AN D R A T IN G — -The 8BM11 i s a com pactron c o n ta in in g a s e m ire m o te -c u to ff pentode S e c tio n 1 and a s h a r p - c u t o f f pentode ( S e c tio n 2 ) . I t i s in te n d e d f o r in te rm e d ia te -f r e q u e n c y a m p l if i e r

DIOD 147 C26

Contextual Info: FLEX10KE Embedded Programmable Logic Family N ovem ber 19SS* v er. 1.Q1 Features. D ata S h e e t $§ Prelim inary Information 88 ^ E m b edded program m able logic device PLD fam ily, p ro v id in g system integration in a single device E nhanced e m b ed d ed array for im plem enting m egafunctions