LEM LP TP Search Results

lem 703

Abstract: lem module LAS 50-TP/SP1 LEM Components
Contextual Info: IPN = 50 A Current Transducer LAS 50-TP/SP1 For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16067 Electrical data IPN IP

Contextual Info: IPN = 50 A Current Transducer LAS 50-TP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16069 Electrical data IPN IP VOUT

M/Lem LP 300

Contextual Info: IPN = 100 A Current Transducer LAS 100-TP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16059 Electrical data IPN IP VOUT

322995

Abstract: PN 1153 V las 50
Contextual Info: fel‘ 32&-995£> Current Transducer LAS 50-TP/SP1 L. = 50 A PN For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Preliminary

ru 94vo circuit

Abstract: 604 LEM ru 94vo LAS 50-TP/SP1 lem lp tp LAS 50-TP-SP1 lem 9944 TCA 875 PN 1204 LPN.500
Contextual Info: feL; ¿^^-9944- Current Transducer LAS 50-TP IPN = 50 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Preliminary Electrical data

Contextual Info: Current Transducer LAS 100-TP/SP1 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 100 A 16111 Electrical data IPN IPM VOUT

Contextual Info: Current Transducer LAS 50-TP/SP1 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 A 16067 Electrical data Features IPN IPM

Contextual Info: Current Transducer LAS 50-TP IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT V REF

Contextual Info: Current Transducer LAS 50-TP/SP1 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT V REF

Contextual Info: Current Transducer LAS 50-TP/SP1 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT Primary nominal r.m.s. current

SFH404

Abstract: lem 50
Contextual Info: SIEMENS SFH 484 SFH 485 GaAIAs INFRARED EMITTER FEATURES • T13/4 Package • Clear Plastic Lens • Long Term Stability • Very High Power, 25 mW Typical at 100 mA • SFH 484-16° Narrow Beam, SFH 485-40° Medium Beam • Smoke Detection Application: SFH484E7517 UL Recognized

lg led tv internal parts block diagram

Abstract: ccol7 microprocessor 40 pins used in color television f MC6847 MCT372 mc1372 details microprocessor 40 pins used in color television sick vs5 12 DA10 MC1372
Contextual Info: Appendix 3 MC6847 data sheet Supplied courtesy of Motorola Semiconductors. The information here has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes to any products

10DC IR 3 PINS

Contextual Info: PAL22V10C PAL22VP10C PRELIMINARY CYPRESS SEMICONDUCTOR Features • • — 10-ns tpu, 90-M H z, Tmax BiCMOS technology • lip to 22 inputs and 10 outputs for more logic power • • Variable product terms High reliability — Proven Ti-W fuse technology

Contextual Info: TAIWAN LITON ELECTRONIC 0035^15 D003DT1 TT7 • TLIT General Purpose Type Photoeoupler l i t e w HTE T> : U FEATURES 1. H iah speed response tPHL, t PLH 6N 135: M A X , 1.5 ms at R L = 4.1kO 2. High instantaneous com m on m ode rejection voltage (C M h : T Y P . 1 kV//ts)

645 LEM

Contextual Info: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp P a cka g e D im e n s io n s in In c h e s (m m ) 0 2 4 (0 6 ) 0 2 8 (0 .7 ) .0 1 6 (0 .4 ) -0 1 6 (0 .4 ) i-E 100 ( 2 54 ) i .157 (4 0) .204 (5 .2)

Contextual Info: PGR 201 06 Optical Receiver Submodule for 2.5 Gbps i FIBER - ► ! DATA 1 i ¥ > 1 1 APD •- 1p r e a m U Features • H e rm e tic , 14 p in b u tte rfly package w ith m u ltiso u rce d fo o tp rin t • S ing le-m o d e fiber p ig ta il

Contextual Info: 10 - 500 MHz Standard Hybrid Amplifier Parameters 10-500 M H z bandwidth • +25 1 0- 500 H yb r îd dB Max 1.0 dB M ax p-p 21 21 dB Min Input 1.5:1 1.5:1 Max Output 1.5:1 1.5:1 Max +26 +25 dBm Min 3rd O rde r +36 + 35 dBm Min 2nd O rd e r +45 +42 dBm Min

Contextual Info: Tem ic AN702 S e m i c o n d u c t o r s Efficient ISDN Power Converters Using the SÌ9100 James Blanc O ne o f the latest technology revolutions, an integrated worldwide telecommunications network, will be accompanied by another advance in pow er conversion

Contextual Info: Alpha 21164 M ic ro p ro c e s s o r Functional O ve rv iew This section provides an overview of 21164 ex tern al signals t h a t su p p o rt the following: • Clocks • Bcache interface • System interface • In terru p ts • Test modes See Figure 1 for a block d iagram of the 21164.

T1P29

Abstract: TIP30 TIP3 TIP30B 82S2
Contextual Info: TIP30; A TIP30B; C philips international 5bE D mt 7 1 1 0 f l E b OCm34fciO 5T S M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS 7- 33 - P N P s ilic o n transistors in a pla stic envelope intended fo r use in o u tp u t stages o f au d io and television

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

TTL family

Abstract: fairchild 93s12 93S12 ttl digital multiplexer 8 select multiplexer ScansUX993
Contextual Info: TTL/MSI 93S12 EIGHT-INPUT MULTIPLEXER TO BE ANNOUNCED D E S C R IP T IO N — The 93S12 is a monolithic, super high speed, 8-Input digital Multiplexer circuit utilizing the Schottky T T L process. It provides in one package the ability to select one bit of data

intel 8212

Abstract: D 8212 intel
Contextual Info: 412 54F/74F412 Multi-Mode Buffered Latch With 3-State Outputs Connection Diagrams '’ Si E Description M The ’ F412 is an 8 -bit latch w ith 3-state o u tp u t buffers. A lso included is a status flip -flo p fo r providing device-busy o r request-interrupt com m ands.

LPC-10-U

Abstract: LPC-12-U
Contextual Info: C irsA V ^ iij v DAC347 >A Corporation“ SIGNAL PROCESSING EXCELLENCE LOW POWER, WIDE TEMPERATURE RANGE DACs FEATURES • 10- and 12-bit models ■ Very low power: less than 300 mW ■ W ide operating temperature range: - 5 5 ° C to + 125 °C ■ MIL-STD-883 Rev. C, Level B or commercial