LED23FC Search Results
LED23FC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LED23FC-TEC-PRContextual Info: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led23fc-tec-pr670x770150-200ma | |
LED23FCContextual Info: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
Original |
led23fc670x770150-200ma | |
LED23FC-TECContextual Info: LED23FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
Original |
led23fc-tec670x770150-200ma | |
LED23FC-SMD5Contextual Info: LED23FC-SMD5 v 1.1 6.11.2013 Description LED23FC-SMD5 is fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This surface mount Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 1 mW qCW. It comes in low temperature co-fired ceramic SMD |
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led23fc-smd5150ma200ma | |
LED23FC-PR-WINContextual Info: LED23FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
Original |
led23fc-pr-win670x770150-200ma | |
LED23FC-PRContextual Info: LED23FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
Original |
led23fc-pr670x770150-200ma | |
Product lineContextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact |
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led18led19led20led21+7 | |
smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
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rlu4116erlt390-50cmgrlt395-50cmgrlt400-50cmg+14 |