LED36 Search Results
LED36 Price and Stock
SPC Multicomp LED3-6Led Holder, Round, 3Mm, 2 Pin; |Multicomp Pro LED3-6 |
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LED3-6 | Bulk | 63,971 | 5 |
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Keystone Technologies LLC KT-LED36PSHID-EX39-8CSB-D36W, COLOR & POWER SELECTABLE, 36/27/18W, 3K/4K/5K EX39, DIRECTDRIVE |
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KT-LED36PSHID-EX39-8CSB-D | Bulk | 11 | 5 Weeks | 1 |
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EiKO Global LLC LED36WPT50KMOG-G8LAMP, LED, LIGHT EMITTIN NON-DIMMABLE, 120-277VAC |
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LED36WPT50KMOG-G8 | Bulk | 4 Weeks | 1 |
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EiKO Global LLC LED36WPT40KMED-G5LED LITESPAN POST 36W 4000LM 4K 80+CRI NON-DIM 100-277V E26 UNIVERSAL BURN POS |
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LED36WPT40KMED-G5 | Bulk | 1 |
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EiKO Global LLC LED36WPT40KMOG-G5LED LITESPAN POST 36W 4000LM 4K 80+CRI NON-DIM 100-277V E39 UNIVERSAL BURN POS |
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LED36WPT40KMOG-G5 | Bulk | 1 |
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LED36 Datasheets Context Search
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Contextual Info: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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led36-smd3300x300150-200ma | |
LED36-TECContextual Info: LED36-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. |
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led36-tecled36-smd3300x300150-200ma | |
LED36-SMD5RContextual Info: LED36-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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led36-smd5r300x300150-200ma | |
LED365-66-60Contextual Info: LED365-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaN LED365-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with clear silicone resin. |
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led365-66-60 | |
LED36Contextual Info: LED36 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. |
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led36300x300150-200ma | |
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Contextual Info: LHp¥ } mm LEDTRONICS, INC*. TH E FU TU R E O F LIGHT 23105 Kashiwa Court Torrance. C A 90505 Phone 800 579-4875 I (310) 534.1505 Fax (310) 534 1424 E-mail webmaster@Iedtronics.com Website: www iedtronics.com Luminaire Photometric Report Filenam e: LED36T8SM -216-XPW -001W |
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led36t8sm-216-xpw-001w120vac+1 | |
LED36-PRContextual Info: LED36-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. |
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led36-prled36-smd3300x300150-200ma | |
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Contextual Info: 23105 Kashiwa Court Torrance. C A 90505 Phone: 800 579-4875/(310)534.1505 LEDTRONICS.3 INC . E-mail: webmaster@ledtronics.com Website: vvwwledtronics.com THE FUTURE OF LIG HT Lu m in a ire P h o to m etric Report Polar Candela D istribu tion Filenam e: LED36T8SM -216-XIW -001W |
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led36t8sm-216-xiw-001w120vac+1 | |
LED36-TEC-PRContextual Info: LED36-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. |
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led36-tec-prled36-smd3300x300150-200ma | |
LED36-PR-WINContextual Info: LED36-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. |
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led36-pr-winled36-smd3300x300150-200ma | |
LED36-SMD5Contextual Info: LED36-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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led36-smd5300x300150-200ma | |
CD 5888
Abstract: cd 5888 s
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led36t8sm-216-xpw-001wf10marycd 5888cd 5888 s | |
LED60
Abstract: IHLP-2525BD-01 ISL97635 ISL97635IRZ TB347 TB379 brt7
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isl97635v/30mav/20ma5m-1994+7 | |
LED36
Abstract: LN363240UN 252 OE
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ln363240unfciss565nm660ninfat32flsh+2 | |
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Product lineContextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact |
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led18led19led20led21+7 | |
r9824
Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
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1/10wxw9902xc990150r28+15 | |
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Contextual Info: ISL97636 Data Sheet May 9, 2008 8-Channel LED Driver Features The ISL97636 is an integrated power LED driver that controls 8 channels of LED current for LCD backlight applications. The ISL97636 is capable of driving typically 72 8x9 pieces of 3.5V/30mA or 80 (8x10) pieces of |
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isl97636v/30mav/20ma5m-1994+1 | |
EMP7128
Abstract: ra8b M5237L nec 157c TLR124 UPD424260-70 ra5b max232 application CC112 CTLD8
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emp7128ra8bm5237lnec 157c+6 | |
drc Rotary encoder
Abstract: UPC157C
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v850e/ms132-/16-bitppd703100ppd703101+6 | |
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Contextual Info: Application Note 1664 ISL97683 LED Driver Evaluation Board User Manual Introduction • LED dimming frequency and duty cycle The ISL97683 Evaluation Board provides a complete testing platform for ISL97683, a three channel LED driver. Please refer to the product datasheet for detailed information, |
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isl97683an1664 | |
sw1 spdtContextual Info: Application Note 1662 ISL97682 LED Driver Evaluation Board User Manual Introduction The ISL97682IRTZEVALZ Evaluation Board provides a complete testing platform for the ISL97682, a two channel LED driver. Please refer to the product datasheet ISL97682, FN7689 for detailed information including pinout, pin function |
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isl97682isl97682irtzevalzfn7689an1662+1 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
AN32181B
Abstract: K11S LED10B
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ta4-ea-06053an32181bk11sled10b | |
FDMA530PZ
Abstract: IHLP-2525BD-01 ISL97635A ISL97635AIRZ TB347 TB379 zener code l24
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isl97635av/30mav/20ma5m-1994+7 | |