LE100 Search Results

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps

Contextual Info: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,

REG5608

Contextual Info: B U R R - BROW N REG5608 LOW CAPACITANCE 18-Line SCSI ACTIVE TERMINATOR FEATURES DESCRIPTION • ACTIVE 18-Line TERMINATOR The REG5608 is a low capacitance 18-line active term inator for SCSI Small Computer Systems Interface parallel bus systems. On-chip resistors and

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

FZT869

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 - ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m ii at 5A * * * 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages

tanaka

Contextual Info: ñB JK ft 0ZI8E0PS REV. ’ON ONIMVHa ^SM m DATE 1O.Ma r.2004 2 DON w. n 054585 mDR.s ñ & DESCRIPTION NO. DELETE a % CHK. ITEMS H.TAKAHASH I %U $ 89 APPD. APPD. Ï.YAHIRo ? 8 0 «£- 5» A ciß a n CM V (.KBS. 2:1) S E C T . A □ □o

le100

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 BF720 BF722 FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable fo r video ou tput stages in TV sets * Sw itching pow er supplies COMPLEMENTARY TYPES:PARTMARKING DETAILS:-

LD271 APPLICATIONS

Abstract: IR LD271
Contextual Info: L 27t/H LD271L/HL SIEMENS 1" lea d s GaAs Infrared Emitter Dimensions in inches mm ,354(9.0) Surface not fla t- 10 (254) .024(0.6) 039 0 0) ' 0 ^ ° « ) :(g8(0.7f| T •0S1 ( l.s jÿ .071 (1.8)-Ci39(1.Q)y .047<1.2) Surface not flat .323 (8.2) >.307(7.8i

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

P1y transistor

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.

BIPOLAR M 846

Abstract: 0/JL3281A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IIP II M JL3281A* Designer's Data Sheet PNP M JL1302A* Com plem entary NPN-PNP Silicon Power Bipolar Transistor *M o torcia Preferred Devio* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

Contextual Info: SFH464 SIEMENS GaAIAs Infrared Emitter FEATURES • Radiation without IR in visible red range • Cathode electrically connected to case • Very high efficiency • High reliability • short switching time • Same package as BP 103, LD 242 • DIN humidity category per DIN 40040 GQG

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio

h1181

Abstract: transistor c-133 optocoupler H11b1 Lf transistor H11B1 H1183 IO510
Contextual Info: SIEMENS CMPNTSi OPTO S I E M E N M4E D S • Ô53b32fci QQOM^fiT 4 M S I E X H 1 1 B 1 / H 1 1 B 2 / H 1 1 B 3 P H O T O D A R L IN G T O N O P T O C O U P L E R " FEATURES • 7500 Volt Withstand Test Voltage • 0.5 pF Coupling Capacitance • CTR Minimum at lp=1 mA:

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT689B IS S U E 3 - O C T O B E R 1995 FEATURES * Gain of 400 at lc=2 A m p s and low saturation voltage * Extremely low equivalent on-resistance; RCE satl 92m£2 at 3 A A P P L IC A T IO N S *

GEX06306

Contextual Info: GaAIAs Infrared Emitter Dimensions in inches mm Surface not flat .024 (0 . 6 ) .016 (0 . 4) .100 (2 .54 ) .047(1 GEX06306 FEATURES • GaAIAs IR emitter made a liquid phase epitaxy process • Small tolerance: Chip surface to case surface • Good spectral match to silicon

J335

Contextual Info: C 3 1 l IT M c i v E i c l u n swfrt ô p l é i S SFH 420 SMT SIDELED® SFH 425 e o GaAs Infrared Emitter Dimensions in inches mm .094 .118(3.0) .083 (2.1) :067 (1.7) J335 (0.9) .028(0.7) .165 (4.2) .149(3.8) .110(2.8 .094 (2.4 1 L "I Anode/ Emitter .134 (3.4)

sfh484

Contextual Info: LD274 SIEMENS GaAs Infrared Emitter Dimensions in inches mm Surface not flat .024(0.6) .016(0.4) J_ .100(2.54) 1-.071 (1.8) .047(1.2)" .224 (5.7) .200 (5.1) .031(0 , .016(0.4! T .232(5.9) .217(5.5)' i .200(5.1) .189(4.8) -4 LI f Cathode .024(0.6) .016(0.4)'

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process

Contextual Info: Infrared Emitter Dimensions in Inches mm .204 (5.2) .17^ (4.5) .157(4.0) 141 (3.6) - 122(3 .1) " 114(2.9) ' .138 (3.5) .024 (.6) .016 (.4)' ^— Ctiip Position .248(6 .3) 1.140(g9) 1.061 (27) FEATURES • GaAs IR emitter made In a liquid phaae epitaxy process