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AN037

Abstract: simco touch sensitive saran ionizer HSMS-8101 HSMS-8202 simco electrostatic Desco Industries 3M Touch Systems
Contextual Info: DESIGN APPLICATION NOTE - AN037 An ESD Overview, and Suggested Handling Precautions What is static electricity, and why are we concerned about it? Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity

Contextual Info: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance

marking 34 sot-363 rf

Abstract: SGA-5263 34 sot-363 rf power amplifier
Contextual Info: SGA-5263 Product Description The SGA-5263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

maxim CODE TOP MARKING

Abstract: 47 SOT143 maxim TOP MARKING MAX2611 MAX2611EUS EIA481-1 MAX2611EUS-T
Contextual Info: 19-1094; Rev 2; 4/05 KIT ATION EVALU E L B A IL AVA DC-to-Microwave, Low-Noise Amplifier _Features The MAX2611 is a low-voltage, low-noise amplifier for use from DC to microwave frequencies. Operating from a single +5V supply, it has a 3dB bandwidth of

LT5554

Abstract: LT5557
Contextual Info: LTC6412 800MHz, 31dB Range Analog-Controlled VGA FEATURES n n n n n n n n n n n n DESCRIPTION 800MHz –3dB Small-Signal Bandwidth Continuously-Adjustable Gain Control –14dB to +17dB Linear-in-dB Gain Range 35dBm OIP3 at 240MHz Across All Gain Settings 10dB Noise Figure at Maximum Gain

JAPANESE TRANSISTOR DATA BOOK 2010

Abstract: Si443x Tanking Group AN427 AN436 SC-10 Si4431 Class-E Power Amplifiers class-e power amplify
Contextual Info: AN436 Si4030/4031/4430/4431 PA M A TC H ING 1. Introduction This application note provides a description of the matching of the power amplifier PA on the Si4030/4031/4430/4431 family of RFICs. (As these chips do not differ in the design and functionality of the PA, the

si4432

Abstract: AN457 Si4432B tx 2b Si4432-DKDB2 AN435 Si443x 4432-T-B1-C-xxx crga
Contextual Info: AN457 T RANSITIONING S i 4432 F R O M R EV V2 TO R EV B 1. Purpose and Overview The purpose of this document is to describe the changes between Revisions V2 and B to assist in the transition to the new revision. Pinout, TX/RX matching, register modifications, and overall performance improvements are

SNA-586

Abstract: ECB-100330 Sirenza Microdevices sna586 DC-5GHZ SOT-86 NGA-586 Sirenza Microdevices, Inc
Contextual Info: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage

SGA-5263Z

Abstract: a52z
Contextual Info: SGA5263Z SGA5263ZDC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

ESG89001

Abstract: philips choke ferrite
Contextual Info: Philips Semiconductors Application note Electro magnetic compatibility and printed circuit board PCB constraints 1. INTRODUCTION The routing of the traces on a Printed Circuit Board (PCB) largely effect the ElectroMagnetic Compatibility (EMC) performance of the PCB with respect to both

CD laser pickup assembly

Abstract: DVD laser pickup assembly CD Laser pickup HFM EL6201 EL6201CW-T7 EL6201CW-T7A EL6201CWZ-T7 EL6201CY MDP0038
Contextual Info: EL6201 Data Sheet Low Power 430MHz HFM Oscillator w/Disable The EL6201 is a solid state high performance laser modulation oscillator with external resistor adjustable frequency and amplitude. The EL6201 is available in both the 8-pin MSOP and the 5-pin SOT-23, to

15w cfl

Abstract: resonant half bridge schematic philips 11w cfl Three phase inverter mosfet Diagram cfl schematic 27W resonant half bridge ballast schematic Sylvania 15W 11w cfl circuit
Contextual Info: AN1234 APPLICATION NOTE L6567: DESIGN HINTS An integrated ballast design has been made with L6567 IC. The chosen topology is an half bridge inverter. L6567 provides all the necessary functions for driving the external power mosfets and for preheat, ignition and steady state operations control of the lamp. The minimum part count required makes

germanium transistor ac 129

Abstract: SGA-3563
Contextual Info: Preliminary Preliminary Product Description SGA-3563 Stanford Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

marking A45

Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Contextual Info: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

marking g45

Abstract: germanium transistor ac 128 SGA-0163
Contextual Info: Preliminary Preliminary Product Description SGA-0163 Stanford Microdevices’ SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

15w cfl

Abstract: 6V 11w cfl DF06N philips 11w cfl 6v inverter 11W cfl CFL 3 x 15w inverter circuit schematic diagram cfl lamp 15w STP2NB50 CFL inverter circuit schematic diagram working principle of an inverter
Contextual Info: AN1234 APPLICATION NOTE L6567: DESIGN HINTS An integrated ballast design has been made with L6567 IC. The chosen topology is an half bridge inverter. L6567 provides all the necessary functions for driving the external power mosfets and for preheat, ignition and steady state operations control of the lamp. The minimum part count required makes

HMMC-5220

Abstract: applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5220 DC-15 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 16 GHz Typical • Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

SGA-5263

Abstract: SGA5263Z 46A52
Contextual Info: SGA-5263 Z SGA-5263(Z) DC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-5263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

CD laser pickup assembly

Abstract: fn7216 CD Laser pickup HFM EL6201 EL6201CW-T7 EL6201CW-T7A EL6201CY EL6201CY-T13 EL6201CY-T7 EL6201CYZ
Contextual Info: EL6201 Data Sheet August 2, 2007 Low Power 430MHz HFM Oscillator with Disable The EL6201 is a solid state high performance laser modulation oscillator with external resistor adjustable frequency and amplitude. The EL6201 is available in both the 8 Ld MSOP and the 5 Ld SOT-23, to enable device

Contextual Info: What H EW LETT 1 W M P ACK A RD DC - 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5200 Features • High Bandwidth, F_ldB: 21 GHz Typical ' GND 1 Vcc 1 1 ' GND 1 • M oderate Gain: S>@ 9.5 dB ±1 dB @ 1.5 GHz • P id B ' 1 @ 1-5 GHz: 12 dBm Typical

Contextual Info: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since

Contextual Info: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Contextual Info: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

Contextual Info: SAMP7717Z SAMP7717Z DC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features The SAMP7717Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and