LC25 Search Results

ixys igbt

Contextual Info: □IXYS IGBT Modules Sixpack lC25 v ces C onditions V CES Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 20 k£i 600 600 V V V GES Continuous V GEM Transient ±20 ±30 V V ^C25 ^CSO Tc =25°C 45 A Tc = 80°C ^CM Tc = 80°C, tp = 1 ms 30 60 A A tsc SCSOA

TS 100-12

Contextual Info: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s

5252 F 4-pin

Abstract: k 1535 5252 S bookham tunable LASER diode 5817 specifications direct pm modulation circuit LC25T bookham dr1670 wdm laser wavelength drift tunable laser diode
Contextual Info: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with extended reach option LC25T This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division Multiplexed

IXYS DS 145

Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s

Contextual Info: ADVANCE M IC R O N I MT41 LC256K32D4 S 256K x 32 SGRAM f ^ D A D U I f ^ C n A R /l w r iM IV I n M r n l V / O 256K x 32 SGRAM PULSED RAS, DUAL BANK, p i p e lin e d ,3 .3 V o p e r a t io n NEW SYNCHRONOUS FEATURES OPTIONS MARKING • Timing 10ns access

LC25W nortel

Abstract: etalon wavelength locker NORTEL laser Nortel LC25 DR1670 LC25W NORTEL laser lc etalon NORTEL NTC LC25
Contextual Info: Optical Components Preliminary Datasheet LC25W*A / LC25EW*A 2.5 Gb/s Buried Het Laser 175 km Reach With Optional Etalon Stabilization Features Description 2.5 Gb/s operation This laser module employs the Nortel Networks strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically

27EO

Contextual Info: F LC253M H S C-tìand Power CiaA s I l l s mrnm ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C mm Item Rating mm V Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 15 w Total Power Dissipation . ; Tc = 25°C Pt stocagei^itperaffiwe Tstg

Contextual Info: n ixY S HiPerFAST IGBT IXGH 32N50B CES lC25 v CE sat % fi Symbol Maximum Ratings Test Conditions T a = 2 5 °C to 1 5 0 °C 500 V T j = 25° C to 150° C; R, . = 1 MU 500 V ’ GES Continuous +20 V V Transient +30 V GEM_ _ ^C2S T c = 2 5 °C 60 A ^C90

diode 14512 H

Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings

Contextual Info: PRELIMINARY 256K32D4 S MT41 LC256K32D4(S) 256K x 32 SGRAM [U II^ P n M I TECHNOLOGY, INC. 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM PULSED RAS#, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES PIN ASSIGNMENT (TOP VIEW) • Fully synchronous; all signals registered on positive

LC256

Abstract: 8941a
Contextual Info: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O. PIPELINED, DCD SYNCBURST SRAM |U |IC =R O N MT58 LC256 K18 F 1 , MT58 LC128 K32 F 1, MT58 LC128 K36 F 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES

L-1543ID-LC25SF1

Abstract: LC25SF1
Contextual Info: T-1 3/4 5mm ROUND LED LAMP PRELIMINARY SPEC Part Number: L-1543ID-LC25SF1.5 HIGH EFFICIENCY RED Description Features OUTSTANDING MATERIAL EFFICIENCY. The High Efficiency Red source color devices are RELIABLE AND RUGGED. made with Gallium Arsenide Phosphide on Gallium

LC25W

Abstract: LC25WZB 1510nm laser diode LC25Wz GR-468-CORE LC25WZCA-J28 laser diode submount
Contextual Info: Data Sheet 2.5Gb/s Buried Het Laser non-WDM applications LC25WZ This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in 2.5Gb/s long distance single channel optical fiber systems. The device is packaged in a

laser chirp parameter

Abstract: 2 Wavelength Laser Diode DFB wavelength locker LC25W-B etalon locker LC25 LC25W laser "chirp parameter" DR1670 LC25EW
Contextual Info: Data Sheet 2.5Gb/s Buried Het Laser 360km Extended Reach With Optional Etalon Stabilization LC25W-B 360km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division

NORTEL laser

Abstract: NORTEL pump laser NORTEL laser lc 992max NORTEL tunable LASER nortel tunable lasers networks LC25ET Nortel NORTEL laser diode tunable laser
Contextual Info: Optical Components Preliminary Datasheet LC25ET 2.5 Gb/s Buried Het Tunable Laser Features Description 2.5 Gb/s Operation This laser module employs the Nortel Networks gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in wavelength

Contextual Info: Data Sheet 2.5 Gb/s CWDM Buried Het Laser 80Km reach LC25WC This laser module provides a fast route to CWDM by providing a drop in replacement on existing TDM or WDM circuit packs with minimum redesign and verification work. The product employs the Bookham strained layer MQW Buried

bookham tunable LASER

Abstract: LC25ET bookham dr1670 DWDM with 50GHz spacing tunable laser diode gain coupled DFB Tunable Laser
Contextual Info: Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with Etalon Stabilisation and extended reach option LC25ET This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division

Contextual Info: □IXYS MID 550-12 A4 MDI 550-12 A4 [ IGBT Modules lC25 = 670 A V CES = 1 2 0 0 V Short Circuit SOA Capability ^ C E s a t typ. = 2 .3 V Square RBSOA MID MDI Preliminary data Symbol Conditions Maximum Ratings V ces T j = 25°C to 150°C 1200 V VcGR T j = 25°C to 150°C; RGE = 20 k£l

LC25W-A

Abstract: bookham lc25 1996 direct pm modulation circuit LC25 LC25W LC25EW bookham dr1670
Contextual Info: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division

LC25TR00-20

Abstract: frequency synthesizer pll
Contextual Info: Communication Section LSI Communication 2.5Gb/S Ethernet Tran LSI Communication 2.12Gb/S Fiber Chann LC25TR00-20 EWRAP DECODER R0:19 Data Received 20 Merged Phase Block Word Alignment State Machine RX+ Retimed Data Recoverd Bus Serial to Parallel Pipeline

Contextual Info: Components for Power Factor Correction Series/Type: TSM-LC25, TSM-LC50 The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal B44066T0050E402 B44066T0025E402 B44066T3050E402 B44066T3050E402

40208

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-4020-8-LC25 INFRARED RECEIVER MODULE ● Description 1. The BRM-4020-8-LC25 is miniaturized infrared receivers for remote control and other applications requiring ●Package Dimensions: improved ambient light rejection.

Contextual Info: Data Sheet 2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization LC25W-A 175km This laser module employs the Bookham strained layer MQW Buried Heterostructure DFB laser chip, and has been designed specifically for use in Wavelength Division

bookham tunable LASER

Contextual Info: LC25ET 1/12/06 12:59 Page 1 Data Sheet 2.5 Gb/s Buried Het 4x100GHz Tunable Laser with Etalon Stabilisation and extended reach option LC25ET This laser module employs the Bookham gain coupled SLMQW buried heterostructure DFB laser chip, and has been