LC 7132 Search Results

diode sy 171 10

Abstract: D 304 x IRF1010 IRFBC40LC "DIODE" SY 171 1 g diode sy 171 SD 336 Ultra High Voltage Hexfets
Contextual Info: PD-9.1070 International Iiqr IRectifier IR FB C 4 0 LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

IP1534

Contextual Info: CMOS DUAL-PORT RAM 16K 2Kx 8-BIT IDT7132SA/LA IDT7142SA/LA FEATURES: DESCRIPTION: • High-speed access — Military: 2 5 /3 5 /5 5 /1 00ns (m ax.) — Com mercial: 2 5 /3 5 /5 5 /1 00ns (m ax.) — Com mercial: 20ns only in P LC C for 71 32 • Low-power operation

Contextual Info: IO PART No. CD NAME PLUG HOUSING E 1301 , G L A S S F I L L E D , NATURAL WHITE) , U L 9 4 V - 0 »— — A PHOSHOR BRONZE PLUG PIN FINISH M A T E R IA L LC P (V E C T R A 0 0 . 7 l±0.06 •0- 0.1 (PITCH) / -0-0 -0-0 -o— ^ - e - e - e - e -©-o ©— -

Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 1 6 K 2 K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns only in PLCC for 7132

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

IRGPC60M

Abstract: 500V N-Channel IGBT TO-3P
Contextual Info: International iqrIRectifier P D - 9.1297 IRGPC60M PRELIMINARY Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

transistor TO-3P Outline Dimensions

Abstract: IRGPC60K
Contextual Info: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

t593

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency

Contextual Info: P R E L IM IN A R Y D A T A S H E E T N O . P D -9 .7 9 3 International S Rectifier IRGBG30FD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast Speed Co-Pack IGBT • Latch-proof Vces = 6 0 0 V • Simple gate drive • High operating frequency

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes

Contextual Info: International jag Rectifier P D - 9.1296 IRGPC60K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10|j s @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized lor high operating frequency over 5kHz

2SC2526

Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
Contextual Info: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R

transistor s parameters noise

Abstract: Super matched pair super match pair ssm pmi al cur hoe tv transistor low noise preamp microphone cascode miller capacitance SSM PNP matched transistors SILICON SMALL-SIGNAL transistor DICE SSM2220
Contextual Info: SSM-2220 PMÎ AUDIO DUAL MATCHED PNP TRANSISTOR FEATURES Very Low Voltage N o is e . @ 1 00Hz, 1nV/v^Hz Max High Gain Bandw idth .190M HzTyp Excellent G a in

8ohm LS

Abstract: mosfet 600V 100A ST 0q2207 irgti0100m12 68OHM 1 GBT 400 A 1200V
Contextual Info: Preliminary Data Sheet No. PD-9.924 irgtioioomi2 SË*] R ectifier "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT VCE = 1200V ^C DC = 1 .Rugged Design •Simple gate-drlve • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"

st 9926

Abstract: 9926 mosfet mosfet 600V 50A
Contextual Info: Preliminary Data Sheet No. PD-9.926 International Rectifier i r g t i o o 5c m i 2 > Fast IGBT "HALF-BRIDGE” INT-A-PAK™ MODULES V CE = 1200V ^C DC = ^ 0 A • Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant

LM317T vw

Abstract: A1015 equivalent LCD 16X4 mc68000 S-MOS SYSTEMS INC seD1352 MC68000 schematics
Contextual Info: S-MOS S Y S T E M S A Seiko Epson Affiliate SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,

IRGTI0075M12

Abstract: m5x0.8 IGBT FW diode 1200V d0251 IGBT M50
Contextual Info: Preliminary Data Sheet No. PD-9.927 International S Rectifier i r g t i o o 75 m i 2 "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT • Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail“

PV0402AP

Abstract: SILICON CONTROL RECTIFIER DETAILS opti 85c 1045a PV040 international rectifier optocoupler
Contextual Info: International IO R Rectifier Data Sheet No. 1.045A PV0402AP Microelectronic HEXFET POWER MOSFET PHOTOVOLTAIC RELAY Power |C Re|ay Single Pole, Normally Open + Ring Detector _ 0-400V, 150mA AC/DC Applications General Description

raychem catalog termination kit and splicing kit

Abstract: raychem catalog for 33 kV cable termination kit Campus Italia Vol 1 sLED 1550nm c10 opto speed SFP fiber optic pinout Mounting tray arinc 404 sLED 1550nm c10 Feeder, Quad Tyco STM Thermistor C60 light peak 10G VSCEL
Contextual Info: FIBER OPTIC PRODUCTS LIGHT YEARS AHEAD Catalog 1307895 Revised 1-0 03 1 LIGHT YEARS AHEAD® Whether you’re designing local area networks, communications systems, or equipment, innovative fiber optic applications begin with innovative fiber optic products. Tyco Electronics offers a complete line of fiber optic

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

PM15CMA060

Abstract: PM15CMA ls igbt block circuit diagram for igbt driver 3 phase UPS block diagram
Contextual Info: International [regjRectifier provisional PD912£ PM15CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 2kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED"™ LHtrafast, Soft Recovery

SMC6232

Abstract: SMC62A32 s414t 024X12 SMC6SA32
Contextual Info: 4-BIT MICROCOMPUTERS • INTRODUCTION The SMC623X family of single chip microcomputers features a 4-bit SMC6200 core CPU, ROM 12 bits per word , RAM (4 bits per word), input ports, output ports, I/O ports, timers, serial port, event counters, analog comparators, sound generators, low voltage configurations, high speed configurations, watchdog timers,

fujitsu transistor

Abstract: high power switching transistor npn switching transistor 400v 2SC3057
Contextual Info: FUJITSU MICROELECTRONICS BIE D Q 374*^2 DQlfciS7S *ì BIFMI < p January 1990 Edition 1.1 r ' 3 3 ' " FUJITSU PRODUCT PROFILE - 2SC3057 Silicon High Speed Power Transistor ' DESCRIPTION The 2SC3057 is a silicon NPN planar general purpose, high power switching tran­

ultrafast n channel 600v 20a IGBT

Contextual Info: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,