LBGA48 Search Results

M36W108AB

Abstract: M36W108AT
Contextual Info: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

10A19

Contextual Info: M36W108AT M36W108AB 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

LGA48

Abstract: M36W108AB M36W108AT
Contextual Info: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product DATA BRIEFING • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

LGAZ0

Abstract: M36W108AB M36W108AT
Contextual Info: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

AI02511

Abstract: M36W108 M36W108B M36W108T
Contextual Info: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

EEPROM 16MB

Abstract: house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004
Contextual Info: Standard and Advanced Architecture Flash DISCOVER ST NOW Flash memories are the most dynamic new driving force in nonvolatile memories. The flexibility they provide for in-system reprogramming and their low cost meet the needs as an enabling technology for many new applications. Nomadic applications, such

SST25VF128

Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Contextual Info: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

M36W108

Abstract: M36W108B M36W108T
Contextual Info: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

LGA48

Abstract: M36W108AB M36W108AT F0000H
Contextual Info: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

Contextual Info: M 36W 108T M 36W 108B 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION

LGAZ0

Abstract: M36W108AB M36W108AT M36W108B M36W108T
Contextual Info: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB ■ SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,

M36W108B

Abstract: M36W108T M36W108AB M36W108AT LGA48
Contextual Info: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • ■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,