LBAS16WT1G Search Results
LBAS16WT1G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LBAS16WT1GContextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16WT1G S-LBAS16WT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified |
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lbas16wt1gs-lbas16wt1gaec-q101sc-70 | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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zmm22zmm24zmm27zmm43+11 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
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lbas16wt1gsc-70 | |
A6 s diode
Abstract: BAW62 diode A6 l sc-70 a6 A6 marking LBAS16WT1G
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lbas16wt1gsc-70a6 s diodebaw62+3 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg |
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lbas16wt1gsc-70/sot-323 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
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lbas16wt1gsc-70/sot-323sc-70ot-323 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
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lbas16tt1gsc-89463c-01463c-02 |