LBAS16TT1G Search Results
LBAS16TT1G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LBAS16TT1GContextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16TT1G S-LBAS16TT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified |
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LBAS16TT1G S-LBAS16TT1G AEC-Q101 SC-89 LBAS16TT1G, 463C-01 463C-02. LBAS16TT1G | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
Original |
LBAS16TT1G SC-89 463C-01 463C-02. | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS TA = 25oC Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) |
Original |
LBAS16TT1G SC-89 463C-01 463C-02. |