LATTICE PACKAGE DIMENSIONS Search Results
LATTICE PACKAGE DIMENSIONS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
LATTICE PACKAGE DIMENSIONS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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22V10A
Abstract: LVCMOS33 LVCMOS18 QFN PACKAGE thermal resistance LVCMOS25 QFN footprint amkor mlf qfn
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ispGAL22V10A AN8074 22V10A 22V10 sizCMOS25 LVCMOS18 ispGAL22V10A 1800adapter 1-800-LATTICE LVCMOS33 QFN PACKAGE thermal resistance LVCMOS25 QFN footprint amkor mlf qfn | |
22V10
Abstract: 22V10A LVCMOS25 LVCMOS33 ABEL plastron
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ispGAL22V10A AN8074 22V10A 22V10 1800adapter 1-800-LATTICE 22V10 LVCMOS25 LVCMOS33 ABEL plastron | |
LC4064V
Abstract: Lattice ispmach LC4064V ispMACH 4A5 flip chip bga 0,8 mm OR3T80 LC4064 OR3C80 OR3T20 OR3T30 OR3T55
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32-Pin 100-Ball 132-Ball 56-Ball 269-Ball 208-Ball 256-Ball 100-Pin 128-Pin 44-Pin LC4064V Lattice ispmach LC4064V ispMACH 4A5 flip chip bga 0,8 mm OR3T80 LC4064 OR3C80 OR3T20 OR3T30 OR3T55 | |
Contextual Info: PA1048-T128-01A Data Sheet 128 pin TQFP socket/28 pin DIP 0.6" plug Supported Device/Footprints Adapter Wiring Using this adapter several 128 pin Lattice devices in TQFP packages can be programmed on 28 pin DIP programmers. This socket will only work for the TQFP package. |
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PA1048-T128-01A socket/28 pLSI1048C ispLSI1048C pLSI2096 ispLSI2096 | |
Lattice PLSI
Abstract: lattice semiconductor tape and reel
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EIA-RS481. Lattice PLSI lattice semiconductor tape and reel | |
16-mm
Abstract: 16MM TAPE PACKAGE
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EIA-RS481. 44-pin 84-pin 48-pin 100-pin 128-pin 176-pin 160-pin 16-mm 16MM TAPE PACKAGE | |
LED43Contextual Info: LED43 v 2.0 24.11.2014 Description LED43 series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 4.15 µm and optical power of typ. 0.01 mW qCW. It comes in TO-18 package a with a glass window. |
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LED43 LED43 150mA 200mA | |
LATTICE SEMICONDUCTOR Tape and Reel SpecificationContextual Info: Tape and Reel Specifications cover tape seals the carrier tape and holds the devices in the pockets. Once loaded, the tape is wound onto a plastic reel for labeling and packing. A full reel holds a maximum quantity of devices depending on the package size. Lattice Semiconductor requires ordering in full reel |
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EIA-RS481. moun481. 44-pin 68-pin 84-pin 28-pin 20-pin LATTICE SEMICONDUCTOR Tape and Reel Specification | |
LED21Contextual Info: LED21 v 1.0 12.02.2014 Description LED21 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.15 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package a with a glass window. |
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LED21 LED21 150mA 200mA | |
LED38Contextual Info: LED38 v 2.0 01.12.2014 Description LED19-PR series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 3.75 µm and optical power of typ. 30 µW qCW. It comes in TO-18 package, with cap and without window on request . |
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LED38 LED19-PR LED38 | |
Contextual Info: LED23 rev 2.0 29.04.2015 Description LED23 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 0.8 mW qCW. It comes in TO-18 package, with cap and without window on request . |
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LED23 LED23 150mA | |
LED19-PRContextual Info: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request . |
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LED19-PR LED19-PR 150mA 200mA | |
LFXP2-8E
Abstract: LFXP2-40E LFXP2-5E LFXP20C theta jc FCBGA LFXP2-17E LFE3-17 Theta JB LFXP15C LFXP2-8E 132
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64-ball 144-ball LFXP2-8E LFXP2-40E LFXP2-5E LFXP20C theta jc FCBGA LFXP2-17E LFE3-17 Theta JB LFXP15C LFXP2-8E 132 | |
84 pin plcc lattice dimension
Abstract: C045
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16-Pin 84 pin plcc lattice dimension C045 | |
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14.5M 1982
Abstract: AC12 MO-220 MO-275 ANSI Y14.5 FCBGA304 fcbga-304 ansi-y14.5m-1982 LAttice bottom marking SCM40
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20-Pin 300-Mil) 1020-ball 1152-ball 1704-ball 492-Ball 208-ball 25-ball 332-ball 100-pin 14.5M 1982 AC12 MO-220 MO-275 ANSI Y14.5 FCBGA304 fcbga-304 ansi-y14.5m-1982 LAttice bottom marking SCM40 | |
Lattice Semiconductor Package Diagrams 256-Ball fpBGA
Abstract: LAttice top marking BB 1704 672-BALL SCM40 AC12 MO-220 MO-275 84 pin plcc lattice dimension fcbga-304
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20-Pin 300-Mil) 208-ball 25-ball 332-ball 100-pin 120-pin 128-pin 160-pin 208-pin Lattice Semiconductor Package Diagrams 256-Ball fpBGA LAttice top marking BB 1704 672-BALL SCM40 AC12 MO-220 MO-275 84 pin plcc lattice dimension fcbga-304 | |
TMS 3880
Abstract: vantis jtag schematic e2cmos technology jtag cable lattice Schematic NT 407 F lattice electrically erasable gal 1985 Vantis ISP cable lattice 1996
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functio268-8000 I0104 TMS 3880 vantis jtag schematic e2cmos technology jtag cable lattice Schematic NT 407 F lattice electrically erasable gal 1985 Vantis ISP cable lattice 1996 | |
JESD22-A108-A
Abstract: JESD22-A104-A JESD22*108 EIA-671 JEDS22-C101-A doc-70 ISO14000 J-STD-035 8110014 Distributors and Sales Partners
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MIL-STD-883, MIL-STD-883E, J-STD-035 JESD22-A108-A JESD22-A104-A JESD22*108 EIA-671 JEDS22-C101-A doc-70 ISO14000 J-STD-035 8110014 Distributors and Sales Partners | |
Date Code restriction
Abstract: On semiconductor date Code shelf life JESD22-B102-C J-STD-033 GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE
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1-888-ISP-PLDS Date Code restriction On semiconductor date Code shelf life JESD22-B102-C J-STD-033 GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE | |
ISPVM embedded
Abstract: post card schematic with ispgal Supercool TQFP-100 footprint matrix converting circuit VHDL or CPLD code low pass Filter VHDL code microcontroller using vhdl ISPVM ieee 1532 ispPAC80
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240VA 750kHz I0117 ISPVM embedded post card schematic with ispgal Supercool TQFP-100 footprint matrix converting circuit VHDL or CPLD code low pass Filter VHDL code microcontroller using vhdl ISPVM ieee 1532 ispPAC80 | |
Recommended land pattern smd-0.5
Abstract: "x-ray machine" Lattice Semiconductor Package Diagrams 256-Ball fpBGA pcb fabrication process ultra fine pitch BGA LC4064ZE package dimension 256-FTBGA nomenclature pcb hdi of BGA Staggered Pins package BN256
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TN1074 Recommended land pattern smd-0.5 "x-ray machine" Lattice Semiconductor Package Diagrams 256-Ball fpBGA pcb fabrication process ultra fine pitch BGA LC4064ZE package dimension 256-FTBGA nomenclature pcb hdi of BGA Staggered Pins package BN256 | |
LCMXO2-1200
Abstract: CEL-9750ZHF CEL-9750ZHF10
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LCMXO2-1200-25WLCSP LCMXO2-1200 CEL-9750ZHF CEL-9750ZHF10 | |
spartan3 fpga development boards
Abstract: M25PXX XCF08S ddr spi flash XCF16S PLCC-48 footprint spi flash m25pxx W25PXX XC3S1000 XC3S1500
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J-STD-033
Abstract: Date Code restriction JESD22-B102 jstd for msl 3
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PB1146b 1-800-LATTICE J-STD-033 Date Code restriction JESD22-B102 jstd for msl 3 |