LED21 Search Results
LED21 Price and Stock
Fix&Fasten FIX-LED-21Spacer sleeve; LEDs,LED; Øout: 5mm; ØLED: 5mm; L: 21mm; natural |
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FIX-LED-21 | 3,520 | 10 |
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STMicroelectronics AEK-LED-21DISM1IC: driver; 5.5÷24V |
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AEK-LED-21DISM1 | 2 | 1 |
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AEK-LED-21DISM1 | Box | 4 Weeks | 1 |
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AEK-LED-21DISM1 | 1 |
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AEK-LED-21DISM1 | 53 Weeks | 1 |
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AEK-LED-21DISM1 | 6,225 |
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Keystone Technologies LLC KT-HBLED215PS-2FB-8CSD-VDIM-PLED HIGH BAY FIXTURE, 2, 120277V INPUT, FROSTED, 010V DIMMING, PREMIUM SERIES |
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KT-HBLED215PS-2FB-8CSD-VDIM-P | Bulk | 17 | 5 Weeks | 1 |
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Keystone Technologies LLC KT-LED21T8-48P2SO-8CSK-DX248IN 21W LED SIGN TUBE CLEAR OPTICAL LENS, 4000-6500K ROTATABLE R17D END CAPS |
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KT-LED21T8-48P2SO-8CSK-DX2 | Bulk | 3 | 5 Weeks | 1 |
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SMC Corporation of America LE-D-2-1REPLACEMENT BELT, LEY16, LEC SERIES |
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LE-D-2-1 | Bulk | 5 Weeks | 1 |
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LED21 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LED21-TEC-PRContextual Info: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. |
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led21-tec-pr300x300150-200ma | |
LED21FC-TEC-PRContextual Info: LED21FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led21fc-tec-pr670x770150-200ma | |
LED21FC-SMD5Contextual Info: LED21FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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led21fc-smd5670x770150-200ma | |
LED21-TECContextual Info: LED21-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED21-TEC has a stable ouput power and a lifetime more then 80000 hours. |
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led21-tec300x300150-200ma | |
LED21-PRContextual Info: LED21-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED21-PR has a stable ouput power and a lifetime more then 80000 hours. |
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led21-prcon50300x300150-200ma | |
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Contextual Info: LED21-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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led21-smd3300x300150-200ma | |
LED21Contextual Info: LED21 v 1.0 12.02.2014 Description LED21 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.15 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package a with a glass window. |
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led21150ma200ma | |
LED21FCContextual Info: LED21FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led21fc670x770150-200ma | |
LED21FC-TECContextual Info: LED21FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led21fc-tec670x770150-200ma | |
LED21FC-PR-WINContextual Info: LED21FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led21fc-pr-win670x770150-200ma | |
LED21FC-PRContextual Info: LED21FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led21fc-pr670x770150-200ma | |
LED21-PR-WINContextual Info: LED21-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. |
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led21-pr-wincond00300x300150-200ma | |
0X29
Abstract: 0X48 GPIO22 F75121R
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f75121f75121r/rgapr/2003oct/2003+7 | |
LED60
Abstract: IHLP-2525BD-01 ISL97635 ISL97635IRZ TB347 TB379 brt7
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isl97635v/30mav/20ma5m-1994+7 | |
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Contextual Info: TPS65012 www.ti.com SLVS504A – MARCH 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR Li-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or |
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tps65012slvs504a100-ma500-ma+4 | |
AIC23
Abstract: LD01 LD02 OMAP1510 TPS65011 TPS65014 TPS65014RGZ TPS65014RGZR TPS65014RGZT 6R0 thermistor
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tps65014slvs551100-ma500-ma+13 | |
103AT
Abstract: AIC23 LD01 LD02 OMAP1510 TPS65011 TPS65011RGZ TPS65011RGZR TI AIC23
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tps65011slvs501a100-ma500-ma+12 | |
ASI4U Application Notes
Abstract: asi bus SAP5 Evaluation Board 2.0 1N4001 1N4148 BZV55C39 SSOP28 TEMD5000 zmd programmer ZMD cross reference
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asi4u application notesasi bussap5 evaluation board 2.01n4001+6 | |
LED25
Abstract: LED10 QFN-24 QFN-24 lcd SCHOTTKY DIODE 20V 2A LED28 DIM100
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fp6741a10-channel640khzmo-153-f+10 | |
sq-h48w
Abstract: SQ-H48W Datasheet KS8995XA LF8731 Transpower HB826-2 ycl dc 101 YCL PH406466 YCL PT163020 pin configuration of sq-h48w lan transformer KS8995E
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ks8995xa10/100mbpsm9999-091508sq-h48w+8 | |
h1664nl
Abstract: KSZ8895MQI KSZ8895 KSZ8895FMQI KSZ8895 driver YCL PH406082 KSZ8895RQ NT79075 KSZ8995 PH406082
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ksz8895mq/rq/fmq10/100mbpsm9999-012011-1h1664nl+9 | |
ISL97670
Abstract: LED9r2 jp1e 6P10S JP16 6P12S ISL97673 ISL97671 ISL97672 ISL97674
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isl97671/2/3/4irz-eval6p12sisl97670isl97671/3/4+8 | |
SQ-H48W
Abstract: 10BT KS8995E KS8995M KS8995MI KSZ8995M 0x810
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ks8995m10/100mbpsm9999-070506sq-h48w+5 | |
AIC23
Abstract: LD01 LD02 OMAP1510 TPS65011 TPS65014 TPS65014RGZ TPS65014RGZR TPS65014RGZT
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tps65014slvs551100-ma500-ma+12 | |